Untitled
Abstract: No abstract text available
Text: 2SK2877-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2877-01
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Untitled
Abstract: No abstract text available
Text: 2SK2877-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2877-01
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Untitled
Abstract: No abstract text available
Text: 2SK2877-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -
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2SK2877-01
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2SK2877-01
Abstract: No abstract text available
Text: 2SK2877-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -
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2SK2877-01
2SK2877-01
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Untitled
Abstract: No abstract text available
Text: 2SK2877-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2877-01
SC-65
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2SK2877-01
Abstract: No abstract text available
Text: 2SK2877-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2877-01
2SK2877-01
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2SK3102-01R
Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2SK3102-01R
2sk3102
2SK2850
2SK2640
2SK3264
2SK2640 equivalent
2SK2645
2SK3264-01MR
2sk3102-01
2SK2648 equivalent
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2sk3337
Abstract: 2sk3102 2SK3264
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type Amps. Amps. 400 23 92 0.2 295 ±30 3.0 TO-247 5.5 450
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2sk3337
2sk3102
2SK3264
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2SK2645
Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)
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Feb-00
O-220AB
2SK1007
2SK2523
O-220F15
2SK2469
2SK1006
2SK2470
2SK2524
2SK2471
2SK2645
2SK2642
2SK2761
2SK1938
2sk2876
2SK1941
2SK2638
2sk2257
2SK2834
2SK2879
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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Untitled
Abstract: No abstract text available
Text: Thlt material irtd the Information herein It the property of Fufl Electric Co.,Ltd. They «hall be neither reproduced, copied, Itn l, or dUdoeed In any way whatioever lor he u»e of any third party nor uted for the manufcoturlnB purpotei w ithout the exprett written consent of Fifl Electric Co.Ud.
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2SK2877-01
H04-004-07
2SK2877-01
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2SK2771-01R
Abstract: 2sk2761 2SK2082
Text: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01
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O-220AB
O-220
O-220F15
2SK2771-01R
2sk2761
2SK2082
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2SK2642-01MR
Abstract: 2SK2652 2SK2876-01MR
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package
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2SK2872-01MR
2SK2870-01L
2SK2871-01
2SK2873-01
2SK2638-01
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2876-01MR
2SK2642-01MR
2SK2652
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