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    2SK308 Search Results

    2SK308 Result Highlights (2)

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    2SK3082STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 75Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3082L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 75Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
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    2SK308 Price and Stock

    Toshiba America Electronic Components 2SK3084(Q)

    Trans MOSFET N-CH Si 100V 30A 3-Pin(3+Tab) TO-220FL
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    Verical 2SK3084(Q) 96 55
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    Quest Components 2SK3084(Q) 76
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    Hitachi Ltd 2SK3082STL

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    Bristol Electronics 2SK3082STL 916
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    2SK308 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK308 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK308 Hitachi Semiconductor Silicon N-Channel MOSFET Scan PDF
    2SK308 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK308 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK308 Unknown FET Data Book Scan PDF
    2SK308 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3080 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3081 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3081 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3081 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3081-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3082(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082L Renesas Technology High Speed Power Amplifier, 60V 10A 30W, MOS-FET N-Channel enhanced Original PDF
    2SK3082L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3082(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3082(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ10050

    Abstract: 2SK3085 K3085 2-10P1B k308
    Text: 2SK3085 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3085 ○ レギュレータDC-DC コンバータ、モータドライブ用 特 • 単位: mm 長 : RDS (ON) = 1.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original     		PDF 2SK3085 O-220AB SC-46 2-10P1B MJ10050 2SK3085 K3085 2-10P1B k308

    k3089

    Abstract: 2SK3089 40IDP
    Text: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3089 k3089 2SK3089 40IDP

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)


    Original     		PDF 2SK3081 ADE-208-636A 220AB D-85622 Hitachi DSA00276

    A1585

    Abstract: 2-10P1B 2SK3085 K3085
    Text: 2SK3085 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)


    Original     		PDF 2SK3085 A1585 2-10P1B 2SK3085 K3085

    Untitled

    Abstract: No abstract text available
    Text: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3089

    K3089

    Abstract: 2SK3089 EAR-5 k308
    Text: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance : |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3089 K3089 2SK3089 EAR-5 k308

    2SK3081

    Abstract: Hitachi DSA00239
    Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)


    Original     		PDF 2SK3081 ADE-208-636A 220AB 2SK3081 Hitachi DSA00239

    k3085

    Abstract: 2-10P1B 2SK3085
    Text: 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)


    Original     		PDF 2SK3085 k3085 2-10P1B 2SK3085

    Untitled

    Abstract: No abstract text available
    Text: 2SK3084 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK3084 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 40 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK3084

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A Z 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1


    Original     		PDF 2SK3080 ADE-208-635A 220AB D-85622 Hitachi DSA002759

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3082 L ,2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637A (Z) 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3082 ADE-208-637A D-85622 Hitachi DSA00276

    2SK3084

    Abstract: No abstract text available
    Text: 2SK3084 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK3084 Chopper Regulator DC−DC Converter, and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK3084 2SK3084

    2SK3081

    Abstract: 2SK3081-E PRSS0004AC-A
    Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching REJ03G1064-0400 Previous: ADE-208-636A Rev.4.00 Sep 07,2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A


    Original     		PDF 2SK3081 REJ03G1064-0400 ADE-208-636A) PRSS0004AC-A O-220AB) 2SK3081 2SK3081-E PRSS0004AC-A

    2-10P1B

    Abstract: 2SK3085 K3085
    Text: 2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.)


    Original     		PDF 2SK3085 2-10P1B 2SK3085 K3085

    2SK3082

    Abstract: Hitachi DSA00239
    Text: 2SK3082 L ,2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3082 ADE-208-637 Hitachi DSA00239

    2SK3081

    Abstract: 2SK3081-E PRSS0004AC-A
    Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching REJ03G1064-0400 Previous: ADE-208-636A Rev.4.00 Sep 07,2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A


    Original     		PDF 2SK3081 REJ03G1064-0400 ADE-208-636A) PRSS0004AC-A O-220AB) 2SK3081 2SK3081-E PRSS0004AC-A

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1


    Original     		PDF 2SK3080 ADE-208-635A 220AB D-85622 Hitachi DSA00276

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)


    Original     		PDF 2SK3081 ADE-208-636A 220AB D-85622 Hitachi DSA002759

    2SK308

    Abstract: D1302 D1302T Hitachi Scans-001 2SK30A 11X1 15V1 st 25 c
    Text: MM'ìbEOS Ü013D57 17T • H I T M 2SK308 HITACHI/«OPTOELECTRONICS blE D SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.


    OCR Scan     		PDF 013D57 2SK308 D1302 D1302T Hitachi Scans-001 2SK30A 11X1 15V1 st 25 c

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    2SK3084

    Abstract: No abstract text available
    Text: TO SH IBA 2SK3084 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK3084 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX.


    OCR Scan     		PDF 2SK3084 2SK3084

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3089 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI 2SK3089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX APPLICATIONS


    OCR Scan     		PDF 2SK3089 O-220FL