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    Toshiba America Electronic Components 2SK30ATM-Y

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    2SK30ATM Y Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK30ATMY Toshiba TRANS JFET N-CH -5MA 3(2-5F1C) Original PDF
    2SK30ATM-Y Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK30ATM Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK30A

    Abstract: 2SK30ATM 0 2SK30ATM
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) SC-43 100kO 2SK30A 2SK30ATM 0 2SK30ATM PDF

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    2SK30ATM Y

    Abstract: 2SK30ATM 0 2sk30atm
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM Y 2SK30ATM 0 2sk30atm PDF

    TOSHIBA 2SK30ATM

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) SC-43 TOSHIBA 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V


    OCR Scan     		2SK30ATM 100kn, 120Hz) PDF

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 PDF

    2SK30ATM 0

    Abstract: 2SK30ATM TOSHIBA 2SK30ATM
    Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V


    OCR Scan     		2SK30ATM 100ka, 100ka 2SK30ATM 0 TOSHIBA 2SK30ATM PDF

    2SK30A

    Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V


    OCR Scan     		2SK30ATM 100ka, 100ka 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM PDF

    2SK30ATM

    Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM 2SK30ATM Y 2SK30ATM 0 2SK30A PDF

    2SK30ATM

    Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
    Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		2SK30ATM SC-43 2SK30ATM 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM PDF

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


    OCR Scan     		OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf PDF

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V


    OCR Scan     		2SK30ATM --50V PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK30ATM-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		2SK30ATM-Y PDF

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A PDF

    2SK520

    Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id


    OCR Scan     		2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 PDF

    2sj111

    Abstract: 2sj110 2sj111 fet 2SK117 2sk170 2sk170 FET TOSHIBA 2SK117 TOSHIBA 2SK362 2SK246 2SK362
    Text: ufcUI,! —3 O \A D O <D N r\> cn o H O « X > JUNCTION FET < I—I |Yfs| TYP. (MIN. ID SS Type No. Application N-Channel General Purpose P-Channel V G DS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) (mS) V DS V GS (V) (V) CD > N F M AX. Crss TYP. V DS F (pF)


    OCR Scan     		2SK117 2SK246 2SK362 2SK363 2SK369 2sj111 2sj110 2sj111 fet 2SK117 2sk170 2sk170 FET TOSHIBA 2SK117 TOSHIBA 2SK362 2SK246 2SK362 PDF

    2sj111 fet

    Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
    Text: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)


    OCR Scan     		2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110 PDF

    2SK30

    Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id


    OCR Scan     		2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33 PDF

    ISS226

    Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
    Text: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)


    OCR Scan     		2SK208 2SK30ATM 2SK209 2SK210 2SK211 2SK117 2SK161 2SK241 ISV128 ISS226 ISV99 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier PDF

    ISS226

    Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181
    Text: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F


    OCR Scan     		1017ESD DDD71G3 2SK208 2SK30ATM 2SK209 2SK117 2SK210 2SK192A 2SK211 2SK161 ISS226 ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    2SJ111

    Abstract: 2SJ110 2sj111 fet 2SJ103 2SJ74 2SK117 2SK170 2SK246 2SK30ATM 2SK363
    Text: ufcUI,! —3 o n X CD O to N ro cn o > J U N C T IO N H « 1 FET IDSS Type No. A p p lic a t io n N-Channel General Purpose High lYfsl Low Noise P-Channel V GDS 'G Pd V (mA) (mW) (mA) VpS V GS (V) (V) Crss TYP. V DS V GS V DS F (mS) (V) (V) (V) (MHz) (pF)


    OCR Scan     		2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SJ103 2SK117 2SK170 2SK246 2SK30ATM 2SK363 PDF

    2SK68A

    Abstract: 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m * * (A) ^ m P d /P c h . (V) «• të * * (W) Ig s s (max) (A) Vg s (V) (Ta=25°C) te W (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id


    OCR Scan     		2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP PDF