Untitled
Abstract: No abstract text available
Text: 300V 30A APT30D30B APT30D30BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
APT30D30B
APT30D30BG*
O-247
|
PDF
|
APT30D30B
Abstract: APT30D30BG
Text: 300V 30A APT30D30B APT30D30BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
|
Original
|
APT30D30B
APT30D30BG*
O-247
APT30D30B
APT30D30BG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
|
PDF
|
IXGH30N60C3D1
Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ
|
Original
|
IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
ID110
IXGH30N60C3D1
30N60C3
G30N60
g30n60c3
30C17
IXGT30N60C3D1
|
PDF
|
ixgh30n60c3d1
Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
IXGH30N60C3D1
IXGT30N60C3D1
IC110
O-268
IF110
O-247)
O-268
O-247
600v 30A fast recovery diode
g30n60c3
Tvj-150
30N60C3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 650V IGBT GenX4TM w/ Sonic Diode IXXH60N65B4H1 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 60A 2.0V 72ns TO-247 AD Symbol Test Conditions Maximum Ratings
|
Original
|
IXXH60N65B4H1
IC110
O-247
IF110
60N65B4H1
DMHP19-067F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.20V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
|
Original
|
IXYH40N65C3H1
IC110
O-247
IF110
40N65C3H1
10-30-12/DMHP19-067F
|
PDF
|
SANKEN BRIDGE DIODE 50A
Abstract: sanken diode
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC ＳＬＡ５２２７ Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GenX3TM 1200V IGBT IXGH30N120B3D1 IXGT30N120B3D1 High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
IXGH30N120B3D1
IXGT30N120B3D1
IC110
IF110
204ns
O-247
O-268
|
PDF
|
IXGR48N60C3D1
Abstract: 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247
Text: IXGR48N60C3D1 GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
|
Original
|
IXGR48N60C3D1
40-100kHz
IC110
ID110
247TM
IXGR48N60C3D1
48N60C3D1
ixgr48n60
48N60
ixgr48n60c3
ixgr48
48N60C3
ISOPLUS247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
IXGH48N60C3D1
IC110
40-100kHz
O-247
ID110
|
PDF
|
IXGH48N60C3D1
Abstract: 48N60C3D1 IXYS IXGH48N60C3D1 ixgh48n60c3d IXGH48N60 48N60 48N60C3 IXGH48N60C3
Text: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
|
Original
|
IXGH48N60C3D1
IC110
40-100kHz
O-247
ID110
IXGH48N60C3D1
48N60C3D1
IXYS IXGH48N60C3D1
ixgh48n60c3d
IXGH48N60
48N60
48N60C3
IXGH48N60C3
|
PDF
|
IXYH30N120C3D1
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
|
Original
|
IXYH30N120C3D1
IC110
O-247
IF110
062in.
IXYH30N120C3D1
|
PDF
|
IXGH30N120B3D1
Abstract: ixgh30n120 G30N120B3 IGBT 1200V 60A IXGH30N120B3 IXGT30N120B3D1 IF110 30n120
Text: IXGH30N120B3D1 IXGT30N120B3D1 GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VCES IC110 VCE sat tfi(typ) = = ≤£ = 1200V
|
Original
|
IXGH30N120B3D1
IXGT30N120B3D1
204ns
IC110
O-247
IF110
O-268
IXGH30N120B3D1
ixgh30n120
G30N120B3
IGBT 1200V 60A
IXGH30N120B3
IXGT30N120B3D1
IF110
30n120
|
PDF
|
|
|
48N60C3D1
Abstract: ixgr48n60c3d1 48N60
Text: GenX3TM 600V IGBT with Diode IXGR48N60C3D1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
|
Original
|
IXGR48N60C3D1
40-100kHz
IC110
247TM
ID110
48N60C3D1
ixgr48n60c3d1
48N60
|
PDF
|
IXGH36N60B3D1
Abstract: IF110
Text: IXGH36N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600
|
Original
|
IXGH36N60B3D1
IC110
40kHz
O-247
IF110
36N60B3
5-05-08-C
IXGH36N60B3D1
IF110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab Short Circuit SOA Capability VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings
|
Original
|
MMIX2S50N60B4D1
IF110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 Short Circuit SOA Capability E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings
|
Original
|
MMIX2S50N60B4D1
IF110
|
PDF
|
IXGH36N60B3D1
Abstract: IF110
Text: IXGH36N60B3D1 GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBT for 5 - 40kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
|
Original
|
IXGH36N60B3D1
IC110
40kHz
O-247
IF110
36N60B3
5-05-08-C
IXGH36N60B3D1
IF110
|
PDF
|
ixgr48n60
Abstract: IXGR48N60B3D1 48N60 48N60B3D1 IXGR48N60B3 smd c7f IF110
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGR48N60B3 IXGR48N60B3D1 VCES = IC25 = VCE sat ≤ tfi(typ) = (Electrically isolatred Back Surface) Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGR_B3 IXGR_B3D1 Maximum Ratings ISOPLUS247TM (IXGR)
|
Original
|
IXGR48N60B3
IXGR48N60B3D1
116ns
IC110
IF110
48N60B3D1)
ISOPLUS247TM
E153432
ixgr48n60
IXGR48N60B3D1
48N60
48N60B3D1
IXGR48N60B3
smd c7f
IF110
|
PDF
|
ixgh40n60b2d1
Abstract: 40N60B2D1 40n60b QG SMD TRANS
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
40N60B2D1
40N60B2D1
IC110
O-268
O-247
728B1
123B1
065B1
ixgh40n60b2d1
40n60b
QG SMD TRANS
|
PDF
|
IXGH48N60B3D1
Abstract: IXGH48N60 48N60
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH48N60B3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR
|
Original
|
IXGH48N60B3D1
IC110
O-247
ID110
48N60B3D1
5-05-08-A
IXGH48N60B3D1
IXGH48N60
48N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
40N60B2D1
IC110
O-268
O-247
728B1
123B1
728B1
065B1
|
PDF
|
40N60B2D1
Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
|
Original
|
40N60B2D1
IC110
O-268
728B1
123B1
728B1
065B1
40N60B2D1
IXGH40N60B2D1
40n60b2d
40n60
40N60B2
|
PDF
|
