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onsemi FSA3200UMX IC ANALOG USB VID SWITCH 16UMLP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FSA3200UMX	Cut Tape	481		1	1 $0.84 10 $0.748 100 $0.5834 1000 $0.54532 10000 $0.54532	Buy Now
Avnet Americas	FSA3200UMX	Reel		4 Weeks	1,188	1 - 10 - 100 - 1000 - 10000 $0.28642	Buy Now
	FSA3200UMX	Reel		0 Weeks, 2 Days	2,778	1 - 10 - 100 - 1000 - 10000 $0.252	Buy Now
Flip Electronics	FSA3200UMX		20,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FSA3200UMX Two-Port, High-Speed USB2.0 Switch with Mobile High-Definition Link '
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Rochester Electronics	FSA3200UMX		24,095		1	1 $0.3071 10 $0.3071 100 $0.2887 1000 $0.261 10000 $0.261	Buy Now

3200UM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
flyback Abstract: Average simulations of FLYBACK converters with SPICE3 UC3845 pspice model SEM-800 dixon flyback smps uc3845 UC3845 spice model SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG voltage controlled pwm generator 0 to 100 pspice model uc3845 isolated smps Spice model xfmr Text: Average simulations of FLYBACK converters with SPICE3 Christophe BASSO May 1996 Within the wide family of Switch Mode Power Supplies SMPS , the Flyback converter represents the preferred structure for use in small and medium power applications such as wall	Original	PDF
mosys sram embedded Abstract: CL018G M1T2HT18FE64E Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 64-Bit wide data buses	Original	PDF	32Kx64) M1T2HT18FE64E 64-Bit CL018G 3200um 2300um 32Kx64 M1T2HT18FE64E mosys sram embedded
MoSys 1T sram Abstract: 64Kx32 CL018G M1T2HT18FE32E C-l018 "1t-sram" Text: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FE32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Early write mode timing • 32-Bit wide data buses	Original	PDF	64Kx32) M1T2HT18FE32E 32-Bit CL018G M1T2HT18FE32E 3200um MoSys 1T sram 64Kx32 C-l018 "1t-sram"
"1t-sram" Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses	Original	PDF	32Kx64) M1T2HT18FL64E 64-Bit CL018G M1T2HT18FL64E 2300um 32Kx64 3200um "1t-sram" TSMC 0.18um MoSys
Untitled Abstract: No abstract text available Text: 3VD298400YL 3VD298400YL 高压MOSFET芯片描述 Ø 3VD298400YL为采用硅外延工艺制造的N沟道增强型 400V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD298400YL 3VD298400YL 3VD298400YLN 400VMOS O-220 3200m 2880m
8 pin IC 4914 Abstract: tr39 ic 7642 TR81 TR-47 EM57300 tr48 TR85 TR44 TR90 Text: EASY SOUND - EM57000 SERIES TINY CONTROLLER-BASED SOUND PROCESSOR GENERAL DESCRIPTION EM57000 is a series of single chip Voice/Dual tone Melody/Dual tone Sound Effect synthesizer ICs. It contains one 4-bit input port provided for EM57100 and above , two 4-bit I/O ports and a tiny controller. User's	Original	PDF	EM57000 EM57100 EM57001 10Kx10 16Kx10 EM57200 32Kx10 EM57300 8 pin IC 4914 tr39 ic 7642 TR81 TR-47 tr48 TR85 TR44 TR90
CL018G Abstract: 64Kx32 M1T2HT18PE32E TSMC 0.18um 1T-sram tsmc sram "1t-sram" Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE32E • High Speed 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 32-Bit wide data buses	Original	PDF	64Kx32) M1T2HT18PE32E 32-Bit CL018G M1T2HT18PE32E 3200um 2300um 64Kx32 64Kx32 TSMC 0.18um 1T-sram tsmc sram "1t-sram"
CL018G Abstract: M1T2HT18PL64E mosys sram embedded sram embedded Text: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 64-Bit wide data buses	Original	PDF	32Kx64) M1T2HT18PL64E 64-Bit CL018G M1T2HT18PL64E 3200um 2300um 32Kx64 mosys sram embedded sram embedded
Untitled Abstract: No abstract text available Text: 3VD298500YL 3VD298500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability.	Original	PDF	3VD298500YL 3VD298500YL O-220 3200m 2880m
Untitled Abstract: No abstract text available Text: 3VD298500YL 3VD298500YL 高压MOSFET芯片描述 Ø 3VD298500YL为采用硅外延工艺制造的N沟道增强型 500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD298500YL 3VD298500YL 3VD298500YLN 500VMOS O-220 3200m 2880m
4N65 Abstract: mosfet 4n65 3VD297650YL Text: 3VD297650YL 3VD297650YL 高压MOSFET芯片描述 Ø 3VD297650YL为采用硅外延工艺制造的N沟道增强型650V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD297650YL 3VD297650YL 3VD297650YLN 650VMOS O-220 3200m 2760m 4N65 mosfet 4n65
Untitled Abstract: No abstract text available Text: 3VD298400YL 3VD298400YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298400YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability.	Original	PDF	3VD298400YL 3VD298400YL O-220 3200m /2880m
CL018G Abstract: M1T2HT18PE64E TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters Text: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 64-Bit wide data buses	Original	PDF	32Kx64) M1T2HT18PE64E 64-Bit CL018G M1T2HT18PE64E 3200um TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters
4N60 Abstract: 3VD297600YL 4542m Text: 3VD297600YL 3VD297600YL 高压MOSFET芯片描述 Ø 3VD297600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD297600YL 3VD297600YL 3VD297600YLN 600VMOS O-220 3200m 2760m 4N60 4542m

mosfet 4n60 power supply Abstract: mosfet 4n60 3VD297600YL 4n60 4N60 equivalent Text: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	PDF	3VD297600YL 3VD297600YL O-220 3200m 2760m mosfet 4n60 power supply mosfet 4n60 4n60 4N60 equivalent
8 pin IC 4914 Abstract: Melody 7920 EM57300 38KHZ EM57000 EM57001 EM57100 EM57200 EM57400 EM57500 Text: EASY SOUND EM57000 Series Tiny Controller-Based Sound Processor Product Specification DOC. VERSION 1.1 ELAN MICROELECTRONICS CORP. Dec. 2003 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.	Original	PDF	EM57000 8 pin IC 4914 Melody 7920 EM57300 38KHZ EM57001 EM57100 EM57200 EM57400 EM57500
CL018G Abstract: M1T2HT18PL32E TSMC 0.18um SRAM Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 32-Bit wide data buses	Original	PDF	64Kx32) M1T2HT18PL32E 32-Bit CL018G M1T2HT18PL32E 3200um TSMC 0.18um SRAM