35N10 Search Results

35N10 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IPD35N10S3L26ATMA1 MOSFET N-CH 100V 35A TO252-31
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD35N10S3L26ATMA1	Digi-Reel	9,390		1	1 $1.38 10 $0.966 100 $1.38 1000 $0.64538 10000 $0.64538	Buy Now
	IPD35N10S3L26ATMA1	Cut Tape	9,390		1	1 $1.38 10 $0.966 100 $1.38 1000 $0.64538 10000 $0.64538	Buy Now
	IPD35N10S3L26ATMA1	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.603	Buy Now
Mouser Electronics	IPD35N10S3L26ATMA1		7,604			1 $1.06 10 $0.838 100 $0.721 1000 $0.613 10000 $0.602	Buy Now
Newark	IPD35N10S3L26ATMA1	Cut Tape	335		1	1 $1.12 10 $0.788 100 $0.616 1000 $0.51 10000 $0.51	Buy Now
	IPD35N10S3L26ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.627	Buy Now
Rochester Electronics	IPD35N10S3L26ATMA1		64,463		1	1 $0.67 10 $0.67 100 $0.6298 1000 $0.5695 10000 $0.5695	Buy Now
Chip One Stop	IPD35N10S3L26ATMA1	Cut Tape	2,435	0 Weeks, 1 Days	1	1 $1.18 10 $0.833 100 $0.651 1000 $0.603 10000 $0.603	Buy Now

EBV Elektronik	IPD35N10S3L26ATMA1			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IPD35N10S3L26ATMA1		14,573			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPD35N10S3L26ATMA1		19,875			1 - 10 - 100 $1.5446 1000 $1.2954 10000 $1.2954	Buy Now
Infineon Technologies AG ISC035N10NM5LF2ATMA1 ISC035N10NM5LF2ATMA1 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISC035N10NM5LF2ATMA1	Cut Tape	4,486		1	1 $4.7 10 $3.116 100 $4.7 1000 $1.7555 10000 $1.7555	Buy Now
	ISC035N10NM5LF2ATMA1	Digi-Reel	4,486		1	1 $4.7 10 $3.116 100 $4.7 1000 $1.7555 10000 $1.7555	Buy Now
Mouser Electronics	ISC035N10NM5LF2ATMA1		6,608			1 $4.34 10 $3.12 100 $2.22 1000 $1.76 10000 $1.75	Buy Now
Newark	ISC035N10NM5LF2ATMA1	Cut Tape	761		1	1 $5.85 10 $4.24 100 $3.3 1000 $2.82 10000 $2.82	Buy Now
EBV Elektronik	ISC035N10NM5LF2ATMA1			19 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPD35N10S3L26ATMA2 MOSFET_(75V 120V(
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD35N10S3L26ATMA2	Digi-Reel	2,500		1	1 $2.15 10 $1.374 100 $2.15 1000 $0.68376 10000 $0.68376	Buy Now
	IPD35N10S3L26ATMA2	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.603	Buy Now
	IPD35N10S3L26ATMA2	Cut Tape	2,500		1	1 $2.15 10 $1.374 100 $2.15 1000 $0.68376 10000 $0.68376	Buy Now
Avnet Americas	IPD35N10S3L26ATMA2	Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.62133	Buy Now
Rochester Electronics	IPD35N10S3L26ATMA2		5,567		1	1 $0.67 10 $0.67 100 $0.6298 1000 $0.5695 10000 $0.5695	Buy Now
EBV Elektronik	IPD35N10S3L26ATMA2			13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SUD35N10-26P-BE3 MOSFET N-CH 100V 12A/35A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SUD35N10-26P-BE3	Cut Tape	1,152		1	1 $2.39 10 $1.775 100 $2.39 1000 $0.96875 10000 $0.96875	Buy Now
	SUD35N10-26P-BE3	Digi-Reel	1,152		1	1 $2.39 10 $1.775 100 $2.39 1000 $0.96875 10000 $0.96875	Buy Now
onsemi FDB035N10A MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB035N10A	Digi-Reel	929		1	1 $7.01 10 $4.794 100 $7.01 1000 $7.01 10000 $7.01	Buy Now
	FDB035N10A	Cut Tape	929		1	1 $7.01 10 $4.794 100 $7.01 1000 $7.01 10000 $7.01	Buy Now
	FDB035N10A	Reel	800		800	1 - 10 - 100 - 1000 $3.105 10000 $3.105	Buy Now
Avnet Americas	FDB035N10A	Reel		0 Weeks, 2 Days	117	1 - 10 - 100 - 1000 $5.09479 10000 $5.05882	Buy Now
	FDB035N10A	Reel		12 Weeks	800	1 - 10 - 100 - 1000 $3.02927 10000 $2.92235	Buy Now
Mouser Electronics	FDB035N10A		28,578			1 $6.91 10 $4.73 100 $3.57 1000 $3.1 10000 $3.1	Buy Now
Newark	FDB035N10A	Cut Tape	849		1	1 $9 10 $6.74 100 $6.1 1000 $6.1 10000 $6.1	Buy Now
	FDB035N10A	Reel			800	1 $3.9 10 $3.9 100 $3.9 1000 $3.9 10000 $3.48	Buy Now
	FDB035N10A	Reel			800	1 $3.9 10 $3.9 100 $3.9 1000 $3.9 10000 $3.48	Buy Now
TME	FDB035N10A				1	1 $5.78 10 $5.2 100 $4.12 1000 $3.85 10000 $3.85	Get Quote

Ameya Holding Limited	FDB035N10A		515			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	FDB035N10A				800	1 - 10 - 100 - 1000 $3.11 10000 $3.11	Buy Now
Avnet Silica	FDB035N10A			13 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	FDB035N10A	Cut Tape	510	0 Weeks, 1 Days	1	1 $6.49 10 $4.43 100 $3.4 1000 $3.38 10000 $3.38	Buy Now
EBV Elektronik	FDB035N10A			14 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FDB035N10A		1,600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	FDB035N10A				800	1 - 10 - 100 - 1000 $3.9501 10000 $3.9501	Buy Now

Find more 35N10 price and stock on Findchips.com

35N10 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
35N10		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
35N100U1		IXYS	IGBT With Diode High Short Circuit Soa Capability		Original	PDF

35N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
35N100U1 Abstract: irm 38 D-68623 ixsn35n100u1 Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 Symbol Test Conditions V CES TJ = 25°C to 150°C 1 Maximum Ratings 1000 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM A Continuous ±20	Original	35N100U1 OT-227 50/orporation D-68623 35N100U1 irm 38 ixsn35n100u1	PDF
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 35N100U1 v C ES ^C 25 v C E sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability éAi 2 4 Sym bol T est C onditions VC ES ^ = 25°C to 150°C 1000 V vC G R ^ = 25°C to 150°C; RGE = 1 MQ 1000 A VG ES Continuous ±20 V v G EM	OCR Scan	35N100U1 000372G	PDF
Untitled Abstract: No abstract text available Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	35N100A O-247 O-204	PDF
TQ-204 Abstract: No abstract text available Text: d i ’ High speed IGBT IXSH/IXSM 35N100A V CES = ^C25 = 70 A = 3.5 V v CE sat 1 0 0 0 V Short Circuit SO A Capability Symbol Test Conditions v CES v CGR v GES T, = 25='Cto150°C 1000 V T, = 25"C to 150°C; RGE = 1 M ii 1000 V Continuous ±20 V V«. Transient	OCR Scan	35N100A Cto150 O-247 O-204 35N100A TQ-204	PDF
35n10 Abstract: No abstract text available Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	35N100A O-204 O-247 35n10	PDF
ixsn 35N120U1 Abstract: 35N120U1 IXSN35N120U1 35n120u 40D50 Text: nixYS IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 1000/1200 V 38 A 3.5 V CES ^C25 v CE sat Short Circuit SOA Capability G é Maximum Ratings Symbol Test Conditions V CES Tj =25°C to150°C 1000/1200 V V COR Tj = 25° C to 150° C; RGE= 1 M i2 1000/1200 V	OCR Scan	35N100U1 35N120U1 to150 OT-227B, ixsn 35N120U1 35N120U1 IXSN35N120U1 35n120u 40D50	PDF
35N120U1 Abstract: No abstract text available Text: IGBT with Diode IXSN 35N100U1 IXSN 35N120U1 CES C25 VCE sat 1000/1200 V 38 A 3.5 V Short Circuit SOA Capability G é Symbol Test C onditions VCES T j = 25°C to 150°C 1000/1200 v CGR T j = 25°C to 150°C; RQE = 1 MQ 1000/1200 V v0ES Continuous ±20 V VGEM	OCR Scan	35N100U1 35N120U1 OT-227B, JXSN35N180U1 35M120U1 35N120U1	PDF
Untitled Abstract: No abstract text available Text: High speed IGBT IXSH 35N100A IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM	Original	35N100A 35N100A O-247 O-204	PDF
Untitled Abstract: No abstract text available Text: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM	OCR Scan	35N100A 4bfib22t. 4bflb22b 00D3712	PDF
35N100A Abstract: 35N10 Text: High speed IGBT IXSH/IXSM 35N100A VCES IC25 VCE sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient	Original	35N100A O-247 O-204 O-204AE 35N100A 35N10	PDF
35N100U1 Abstract: IXSN35N100U1 Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 A VGES Continuous ±20	Original	35N100U1 OT-227 35N100U1 IXSN35N100U1	PDF
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
SPD35N10 Abstract: 35n10 P-TO252 Q67042-S4125 Text: 35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS N-Channel Enhancement mode 175°C operating temperature V R DS on 44 m ID 35 A Avalanche rated P-TO252 dv/dt rated Type 35N10 Package P-TO252 Ordering Code	Original	SPD35N10 P-TO252 Q67042-S4125 35N10 SPD35N10 35n10 P-TO252 Q67042-S4125	PDF

B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF
35n10 Abstract: SMD marking code 35A Text: 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated P-TO262-3-1 V R DS on 44 m ID 35 A P-TO263-3-2 P-TO220-3-1 dv/dt rated Type 35N10 Package	Original	SPI35N10 SPP35N10 SPB35N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB35N10 SPI35N10 P-TO220-3-1 35n10 SMD marking code 35A	PDF
35n10 Abstract: SPB35N10 SPI35N10 SPP35N10 DSA00135269 Q67042-S4103 Text: Preliminary data 35N10 35N10,35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated P-TO262-3-1 V R DS on 44 m ID 35 A P-TO263-3-2 P-TO220-3-1 dv/dt rated	Original	SPI35N10 SPP35N10 SPB35N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP35N10 Q67042-S4123 35n10 SPB35N10 SPI35N10 DSA00135269 Q67042-S4103	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
BERULUB FR 16 B Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power	Original	IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram	PDF
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â	PDF
TC1724 Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784 Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions	Original		PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF

35N10 Search Results

35N10 Price and Stock

Infineon Technologies AG IPD35N10S3L26ATMA1

Infineon Technologies AG ISC035N10NM5LF2ATMA1

Infineon Technologies AG IPD35N10S3L26ATMA2

Vishay Siliconix SUD35N10-26P-BE3

onsemi FDB035N10A

35N10 Datasheets (2)

35N10 Datasheets Context Search

35N100U1

Untitled

Untitled

TQ-204

35n10

ixsn 35N120U1

35N120U1

Untitled

Untitled

35N100A

35N100U1

KYS 30 40 diode

EATON CM20A

SPD35N10

B1116

35n10

35n10

40n80

IRFD1Z3 equivalent

30n60

BERULUB FR 16 B

Untitled

TC1724

7n60b