msm51v17800b
Abstract: MSM51V17800 SOJ28 bsl 100
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
J2G0076-17-41
MSM51V17800B/BSL
MSM51V17800B/BSL
152-Word
MSM51V17800B/BSLCMOS2
42CMOS
28SOJ28TSOP
04832ms2
048128msSL
28400milSOJ
msm51v17800b
MSM51V17800
SOJ28
bsl 100
|
PDF
|
msm514256c
Abstract: DIP20 MSM514256 ZIP20
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
J2G0010-17-41
MSM514256C/CL
MSM514256C/CL
144-Word
MSM514256C/CLCMOS262
41CMOS
20DIP26/20SOJ20ZIP
5128ms51264msL-
20300milDIP
26/20300milSOJ
msm514256c
DIP20
MSM514256
ZIP20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
|
Original
|
HY51V
65163HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
|
PDF
|
MAX643
Abstract: MAX630/MAX4193 MAX8212 equivalent max630 inverter /S69 2LF
Text: 19-0915; Rev 1; 12/03 CMOS Micropower Step-Up Switching Regulator Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum-size DC-DC converter circuits in the 5mW to 5W range. The MAX630 and MAX4193 provide all control and power
|
Original
|
MAX630
MAX4193
375mA
MAX643
MAX630/MAX4193
MAX8212 equivalent
inverter /S69 2LF
|
PDF
|
raytheon xr2207
Abstract: exar 2207 XR-2207 XR-2207C XR-2207M H75r xr2207
Text: - 49 2 - XR-2207 T i / '- s . veo EXAR f i « V '* E E * l í 0 5 S í a t s ( V C O ) T-, H £ ¡ * . mì&itmmit o . o i h z — i m h z t- , aííí?¡ ( T „ = 2 5 “C ) - & t -= y ? t Fs : 26V i V : 468mW( T-? y í> ) 1042mW ( -fe 7 5; -y ^ )
|
OCR Scan
|
xr-2207
20ppm
SH---1000
468mW
1042mW
25mW/-C
33mW/1C
160TC/W
120-C/W
XR-2207M)
raytheon xr2207
exar 2207
XR-2207C
XR-2207M
H75r
xr2207
|
PDF
|
58AK
Abstract: XR-2207 XR-2207C XR-2207M 0H75
Text: - 49 2 - XR- 2 2 0 7 T i / '- s . veo EXAR f i « V '* E E * l í 0 5 S í a t s ( V C O ) T-, H £ ¡ * . mì&itmmit o . o i h z — i m h z t- , aííí?¡ ( T „ = 2 5 “C ) - & t -= y ? t Fs : 26V i V : 468mW( T-? y í> ) 1042mW ( -fe 7 5; -y ^ )
|
OCR Scan
|
xr-2207
20ppm
SH---1000
468mW
1042mW
25mW/-C
33mW/1C
160TC/W
120-C/W
XR-2207M)
58AK
XR-2207C
XR-2207M
0H75
|
PDF
|
4A04I
Abstract: tc514100a
Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
TC51441OAP/AJ/ASJ/AZ--
TC51441OAP/AJ/ASJ/AZ-80
TC51441OAP/AJ/ASJ/AZ-10
TC51441
TC514410AP/AJ/ASJ/AZ
350mil)
TC514100AP/AJ/ASJ/AZ.
TC5141OOAP/AJ/ASJ/AZ-60
4A04I
tc514100a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.
|
OCR Scan
|
TC514101AP/AJ/ASJ/AZ
300/350mil)
TC514101AP/ASJ/AZ.
TC514101AP/AJ/ASJ/A2-70,
TC514101AP/AJ/ASJ/AZ-80
TC514101AP/AJ/ASJ/AZ-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
|
OCR Scan
|
TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
|
PDF
|
tc51100ap
Abstract: DIP18-P-300E TC514100
Text: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
TC514100AF/AJ/ASJ/AZ
TC514100AP/AJ/ASJ/AZ
300/350mil)
TC514100AP/AJ/ASJ/AZ.
TC5141
TC514100AP/AJ/ASJ/AZ-80
tc51100ap
DIP18-P-300E
TC514100
|
PDF
|
TC514100
Abstract: 514100A
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
|
OCR Scan
|
--------------TC514100ASJ/AZ/AFT-60/70/80
TC514100A
TC514410ASJ/AZ/AFT
300mil)
TC51400/ASJ/A27AFT.
TC514100
514100A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
|
OCR Scan
|
HY5117410
1AD06-10-APR93
HY5117410JC
HY5117410UC
HY5117410TC
HY5117410LTC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
|
OCR Scan
|
1Mx16,
16-bit
1Mx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
HY5117100
1AD04-10-APR93
HY5117100JC
HY5117100UC
HY5117100TC
HY5117100LTC
HY5117100RC
|
PDF
|
|
|
RC3403ADB
Abstract: MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON
Text: RAYTHEON^ SEMICONDUCTOR 57 De J 75T73fc>0 □DQ4bO]i 1 | ^ 57C 04 60 1 7 5 9 7 3 6 0 “ RAYTHEON“ CO* P R O D U C T S PEC IFIC ATIO N S Raytheon LINEAR INTEGRATED CIRCUITS Ground Sensing Quad Operational Amplifier Features RC3403A, RC3503A Mask Pattern
|
OCR Scan
|
75T73bO
T-79-10
RC3403A,
RC3503A
LM324
MC3403
RC/RV3403A
RM3503A
Q004bll
RG3403A,
RC3403ADB
MAX 7910
RV3403ADB
RM3503ADC
RC3403ADC
RC3403
LM324 as wein bridge oscillator
RAYTHEON SEMICONDUCTOR
RC-350
RAYTHEON
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
0Q20c
TC514100AP/AJ/ASJ/AZ
TC514100
300/350mil)
TC5141OOAP/AJ/ASJ/AZ-70,
TC514100AP/AJ/ASJ/AZ-80
TC5141OOAP/AJ/ASJ/AZ-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
TC514402AP/AJ/ASJ/AZ
300/350m
5514402AP/AJ/ASJ/AZ-80
TC514402AP/AJ/ASJ/AZâ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEB 16 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117100-60/-70/-80 „ CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8117100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of
|
OCR Scan
|
MB8117100-60/-70/-80
MB8117100
096-bits
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4,194,304 WORD X 1 BIT'DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
|
OCR Scan
|
TC514100JL/ZL
TC514100J/Z.
TC514100JLVZL-80
TC514100JL/ZL-10
|
PDF
|
TC51440ASJ
Abstract: No abstract text available
Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
TC514410ASJ-60/70/80
TC514410ASJ
300mil)
TC5144100/
512KX4
TC51440ASJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FÉB i 6 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216
|
OCR Scan
|
MB8117400-60/-70/-80
MB8117400
196-bits
MB81Fujitsu
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RC4195 RAYTHEON/ H E D | 75^73ba QDObBTT 3 | Voltage Regulators T -& -U -0 3 S EM I CO N D UC TO R RC4195 Fixed ±15V Dual Trackhg Voltage Regulator associated with single point regulation. The regulator is intended for ease of application. Only two external components are required for
|
OCR Scan
|
RC4195
100mA
10/xF
2N4905
|
PDF
|
AZL-70
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the
|
OCR Scan
|
TC514400APL/AJL/ASJL/AZL
300/350mil)
tolTC514400APL/AJL/ASJIVAZL.
a512K
TC514400APL/AJ
L/AZL-70,
L/AZL-80
AZL-70
|
PDF
|
RC3302DB
Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
Text: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V
|
OCR Scan
|
LM139/139A,
239/239A,
339/339A,
RC3302
1N914
73tiO
0470ci
RC3302DB
ic lm 339
RC3302
LM339AJ
av 339
pin for lm 339 ic
lm339n Linear Integrated Circuit
LM2901
LM 339 application note
LM339AM raytheon
|
PDF
|