4GHZ TRANSISTOR N Search Results

4GHZ TRANSISTOR N Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

4GHZ TRANSISTOR N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor Zo 105 Abstract: 6943-3 55086 HEMT marking P 05973 Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973	PDF
6943-3 Abstract: No abstract text available Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications	Original	OT343 CFH800 Rn/50 6943-3	PDF
transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor	PDF
BFR360 Abstract: BFR360T GPS05996 Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,	Original	BFR360T 10dBm VPS05996 P-SC-75 GPS05996 BFR360 BFR360T GPS05996	PDF
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor	PDF
GSM repeater circuit using transistor Abstract: No abstract text available Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz	Original	RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor	PDF
Untitled Abstract: No abstract text available Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz	Original	RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
acs sot-343 Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560	PDF
ACS 086 Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz	PDF
BFP640E6327 Abstract: BFP640 noise figure bfp640e R4S BFP640 Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640	PDF
R4S BFP640 Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz	PDF
Untitled Abstract: No abstract text available Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	FHC40LG FH40LG 2-12GHz	PDF
Low Noise HEMT Abstract: Super low noise figure and high associated gain Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain	PDF

08/bup 3110 transistor Abstract: No abstract text available Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	FHC40LG FHC40LG 2-12GHz 08/bup 3110 transistor	PDF
BFR34* transistor Abstract: transistor k 4213 BFR340F C5 MARKING TRANSISTOR Text: BFR340F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation Transistor frequency of 14 GHz High insertion gain 2 3 Ideal for low current amplifiers and oscillators 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340F Aug-23-2001 -j100 BFR34* transistor transistor k 4213 BFR340F C5 MARKING TRANSISTOR	PDF
2N6617 Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101 Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions	OCR Scan	2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101	PDF
HXTR-5002 Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz Text: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz	OCR Scan	HXTR-5002 HXTR-5002 HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz	PDF
Hewlett-Packard application note 967 Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions	OCR Scan	2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. Hewlett-Packard application note 967 HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor	PDF
2SC2644 Abstract: 2SC264 Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC2644 55MAX. SC-43 961001EAA2' 2SC2644 2SC264	PDF
2SC2644 Abstract: No abstract text available Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC2644 55MAX. SC-43 961001EAA2' 2SC2644	PDF
sg transistor Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor" Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage	OCR Scan	TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor"	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm V H F- U H F BAND W ID EBA N D AM PLIFIER APPLICATIONS. 5.1 M A X . • • • High Gain Low IMD fp = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC2644 961001EAA2'	PDF
2SC2644 Abstract: No abstract text available Text: 2SC2644 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR V H F - U H F B A N D W ID E B A N D A M P LIFIE R APPLIC A TIO N S. • • • U n i t in m m High Gain Low IMD frr = 4GHz Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC2644 SC-43 S21eJ! 2SC2644	PDF

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4GHZ TRANSISTOR N Search Results

4GHZ TRANSISTOR N Result Highlights (5)

4GHZ TRANSISTOR N Datasheets Context Search

transistor Zo 105

6943-3

transistor zo 107

BFR360

transistor zo 107

GSM repeater circuit using transistor

Untitled

BFP620 acs

acs sot-343

ACS 086

BFP640E6327

R4S BFP640

Untitled

Low Noise HEMT

08/bup 3110 transistor

BFR34* transistor

2N6617

HXTR-5002

Hewlett-Packard application note 967

2SC2644

2SC2644

sg transistor

Untitled

2SC2644