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    50A MOSFET Search Results

    50A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2503P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 50A 55Mohm To-3P Visit Renesas Electronics Corporation
    HAT2270H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 3.4Mohm Lfpak Visit Renesas Electronics Corporation
    2SJ505STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -50A 22Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJK1526DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 150V 50A 42Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK2553L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 50A 10Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation

    50A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D50NH

    Abstract: D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02
    Text: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark


    Original     		PDF STD50NH02L STD50NH02L-1 D50NH D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02

    STB55NF06

    Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
    Text: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω


    Original     		PDF STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK/I2PAK/TO-220/TO-220FP STB55NF06 STP55NF06 O-220 p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp

    p40nf10

    Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
    Text: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■


    Original     		PDF STD40NF10 STP40NF10 O-220 O-220 p40nf10 STD40NF10 D40NF JESD97 STP40NF10 TF415

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 500V 1 PDM505HC


    Original     		PDF PDM505HC

    D50NH02L

    Abstract: D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02
    Text: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A 3 3 2 • Logic level device ■ RDS(ON) * Qg Industry’s benchmark


    Original     		PDF STD50NH02L STD50NH02L-1 D50NH02L D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 500V 1 PDM505HA P2HM505HA


    Original     		PDF PDM505HA P2HM505HA

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 450 500V 1 PD7M441H P2H7M441H PD7M440H


    Original     		PDF PD7M441H P2H7M441H PD7M440H

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 50A 450 500V 1 PD7M441L P2H7M441L PD7M440L


    Original     		PDF PD7M441L P2H7M441L PD7M440L

    F1S50N06

    Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 175oC 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    mosfet 100A

    Abstract: 40V, 50A n mosfet
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 50A @VGS = 10V RDS ON


    Original     		PDF MDI1752 MDI1752­ mosfet 100A 40V, 50A n mosfet

    50n06l

    Abstract: No abstract text available
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. Cu94e-5) 50e-4 53e-6) 54e-3 21e-6) 50n06l

    MDI1752

    Abstract: 40V50A 40V, 50A n mosfet 82269
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDI1752 MDI1752­ 40V50A 40V, 50A n mosfet 82269

    STB55NF06

    Abstract: No abstract text available
    Text: STB55NF06 N-CHANNEL 60V - 0.018Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB55NF06 • ■ ■ ■ VDSS RDS on ID 60V <0.022Ω 50A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT


    Original     		PDF STB55NF06 O-263) STB55NF06

    fairchild APPLICATION NOTE AN 9321

    Abstract: No abstract text available
    Text: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFP50N06 175oC RFP50N06 fairchild APPLICATION NOTE AN 9321

    rfp50n06

    Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC rfp50n06 F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260

    MDD1653

    Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
    Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state


    Original     		PDF MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R

    2E12

    Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
    Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRK160D FRK160H FRK160R
    Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK160D FRK160H FRK160R

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge


    Original     		PDF FDD16AN08A0 O-252AA DD16AN08A0

    Untitled

    Abstract: No abstract text available
    Text: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD13AN06A0 O-252AA

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDD16AN08A0 O-252AA 52oC/W) FDD16AN08A0

    Untitled

    Abstract: No abstract text available
    Text: FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD14AN06LA0 O-252AA

    MDF1752

    Abstract: 220F
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		PDF MDF1752 MDF1752­ 220F