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    55N10 Search Results

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    R5F72855N100FP#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    55N10 Price and Stock

    Flip Electronics FQP55N10

    MOSFET N-CH 100V 55A TO220-3
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    DigiKey FQP55N10 Tube 5,562 500
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    onsemi FQB55N10TM

    MOSFET N-CH 100V 55A D2PAK
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    FQB55N10TM Digi-Reel 1
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    Mouser Electronics FQB55N10TM 9,337
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    Newark FQB55N10TM Cut Tape 1,600 1
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    Chip1Stop FQB55N10TM 580
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    American Electrical Inc A1555.N1000.22

    CABLE GLAND 17-22MM 1" NPT
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    DigiKey A1555.N1000.22 Bag 98 1
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    Rochester Sensors TLL155-N-1000-73

    SENSOR LEVEL SWITCH
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    DigiKey TLL155-N-1000-73 Ammo Pack 42 1
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    onsemi FQP55N10

    MOSFET N-CH 100V 55A TO220-3
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    55N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OM55N10NK

    Abstract: OM60N10NK OM75N05NK OM75N06NK
    Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)


    Original     		PDF

    55n10

    Abstract: 75n05 60n10 75N06SA 75n06 OM55N10SA OM55N10SC OM60N10SC OM75N05SA OM75N05SC
    Text: 55N10SC OM60N10SC OM75N05SC OM75N06SC 55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •


    Original     		PDF OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA O-254 O-258 MIL-S-19500, 55n10 75n05 60n10 75N06SA 75n06

    STH55N10

    Abstract: STW55N10 STH55N10FI gc352 n55a
    Text: 7^5^237 0 04S cî5ti TTfl • S 6 T H _ *57 SGS-THOMSON STH55N1 o/Fl 55N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1OFI STW 55N10 ■ . . . . . ■ . V dss RoS on Id 100 V 100 V 100 V < 0.030 n < 0.030 Q


    OCR Scan     		PDF STH55N10/FI STW55N10 STH55N10 STH55N10FI STW55N10 7R21237 004S1b2 STH55N10/FI-STW55N10 gc352 n55a

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge


    OCR Scan     		PDF OM55N1Ã OM75N05NK OM60N10NK OM75NQ6NK MIL-S-19500,

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    MTM13N50E

    Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e
    Text: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)


    OCR Scan     		PDF O-204AA/AE O-204AA O-204AE 97A-03 TM12P10 TM20P10 MTM6N100E MTM6N80E IRF440 IRF450 MTM13N50E MTM13N50 40N20 MOSFET IRF250 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e

    Untitled

    Abstract: No abstract text available
    Text: 55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels


    OCR Scan     		PDF OM55N10NK OM75N05NK OM75N06NK MIL-S-19500, 55N10NK 60N10NK 75N06NK 75N05NK 025rom

    55n10

    Abstract: No abstract text available
    Text: OM55N1ÛSC OM60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW R DS 0n POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V. A n d 1 00 V Ultra L o w RDS(on) P o w e r M O S F E T s In T O -2 54 A n d T O-258 Isolated P a c k a g e s


    OCR Scan     		PDF OM55N1 OM60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA O-258 MIL-S-19500, 55n10

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    55N10

    Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
    Text: MOTOROLA SEMICONDUCTOR MTM55N08 55N10 MTM60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high


    OCR Scan     		PDF MTM55N08 MTM55N10 MTM60N05 MTM60N06 60N05· 55N10 transistor 60n06 60N06 60N05 55N08 55N08/M

    60N06

    Abstract: motorola mosfet
    Text: MOTOROLA SC XSTRS/R F bf l E T> b 3 b 7 ES4 DOTflbn M O TO R O LA •I SEMICONDUCTOR 55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 55 and 60 A M P E R E N-CHANNEL T M O S POWER FETs N - C H A N N E L E N H A N C E M E N T - M O D E S IL IC O N G A T E


    OCR Scan     		PDF MTM55N10 MTM60N06 O-204AA) 97A-01 97A-03 97A-03 O-204AE) 60N06 motorola mosfet

    12N60FI

    Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90


    OCR Scan     		PDF 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL

    Untitled

    Abstract: No abstract text available
    Text: 55N10SC OM60N10SC OM75NÛ5SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •


    OCR Scan     		PDF OM55N10SC OM60N10SC OM75NÃ OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA O-254 O-258 MIL-S-19500,

    55n10

    Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
    Text: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR 55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR


    OCR Scan     		PDF b3b72S4 MTM55N10 MTM60N06 VI55N 55n10 transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 of 60N06 S0020