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    60N60B Search Results

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    60N60B Price and Stock

    Microchip Technology Inc APT60N60BCSG

    MOSFET N-CH 600V 60A TO247
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    DigiKey APT60N60BCSG Tube 132 1
    • 1 $20.27
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    Avnet Americas APT60N60BCSG Tube 28 Weeks 30
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    Mouser Electronics APT60N60BCSG 20
    • 1 $20.27
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    Newark APT60N60BCSG Bulk 30
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    Microchip Technology Inc APT60N60BCSG Tube 28 Weeks
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    TME APT60N60BCSG 1
    • 1 $29.34
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    NAC APT60N60BCSG Tube 18
    • 1 $18.81
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    Richardson RFPD APT60N60BCSG 30
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    Avnet Silica APT60N60BCSG 30 Weeks 30
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    EBV Elektronik APT60N60BCSG 29 Weeks 30
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    Master Electronics APT60N60BCSG
    • 1 $19.37
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    IXYS Corporation IXGH60N60B2

    IGBT 600V 75A 500W TO247
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    DigiKey IXGH60N60B2 Tube
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    IXYS Corporation IXGR60N60B2

    IGBT 600V 75A 250W ISOPLUS247
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    IXYS Corporation IXGT60N60B2

    IGBT PT 600V 75A TO268AA
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    New Advantage Corporation IXGT60N60B2 690 1
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    IXYS Corporation IXGR60N60B2D1

    IGBT 600V 75A 250W ISOPLUS247
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    Find more 60N60B price and stock on Findchips.com

    60N60B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		60N60B2D1 IC110 O-264 PLUS247 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A PDF

    60n60b

    Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A PDF

    60N60B2D1

    Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 PDF

    60N60B2

    Abstract: ixgt60n60b2
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		60N60B2 IC110 O-268 60N60B2 ixgt60n60b2 PDF

    PLUS247

    Abstract: IXGR60N60B2D1
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A PLUS247 IXGR60N60B2D1 PDF

    60n6

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		60N60B2D1 IC110 2x61-06A 60n6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT IXGH 60N60B2 IXGT 60N60B2 Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		60N60B2 IC110 O-268 O-247 PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF