4.19MHz crystal
Abstract: KS57C2504 B4MS
Text: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an
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KS57C2504
KS57C2504
320-dot
0011B.
0000B.
1001B,
04ST7D
4.19MHz crystal
B4MS
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ka7309
Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE
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KS7214
KS7214
48-QFP-0707
37T37
71b4142
48-QFP-0707
ka7309
TI 81W
CAMERA 803 CMOS
sync timing generator
T3D 77
78235
T3D 91
oil temperature sensor generator
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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Untitled
Abstract: No abstract text available
Text: KM48C514D, KM48V514D CMOS DRAM 512Kx 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low
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KM48C514D,
KM48V514D
512Kx
512Kx8
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Untitled
Abstract: No abstract text available
Text: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V
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KA8513B
KA8S13B
50MHz
1200bps
KA8513BD
20-SS0P-225
455KHZ
10MAX
30-SS0P-375
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Untitled
Abstract: No abstract text available
Text: KS9282B CMOS INTEGRATED CIRCUIT DSP+DAC 16BIT FOR CDP The KS9282B is a CMOS integrated circuit designed for the Digital Audio Signal processor of the CDP (Compact Disc Player) application. It is a Monolithic IC that builts-in 16-Bit Digital to Analog Converter to add to the conventional DSP function.
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KS9282B
16BIT)
KS9282B
16-Bit
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KMM366S403BTN-G2
Abstract: KMM366S403BTN-G0
Text: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S403BTN
KMM366S403BTN
4Mx64
400mil
168-pin
DD373b2
KMM366S403BTN-G2
KMM366S403BTN-G0
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Untitled
Abstract: No abstract text available
Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS
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KM4132G271
32Bit
KM4132G271
D21L11
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Untitled
Abstract: No abstract text available
Text: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r Built In T O -92 S • Switching circuit. Inverter. Interlace circuit Driver circuit • Built in bias Resistor(R, = 47K!J, Rj=47K fi) • Complement to KSR2204 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1204
KSR2204
0GE4T31
71bm42
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RAS 1210 SUN HOLD
Abstract: sun hold RAS 1220 sun hold ras 1210
Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns
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KM416V1204A/A-L/A-F
KM416V1204A-6/A-L6/A-F6
110ns
KM416V1204A-7/A-L7/A-F7
130ns
KM416V1204A-8/A-L8/A-F8
150ns
42-LEAD
44-LEAD
RAS 1210 SUN HOLD
sun hold RAS 1220
sun hold ras 1210
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Untitled
Abstract: No abstract text available
Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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6000B
16Mx1
KM41C16000BS
0G34Q05
71b4142
0034QGfc>
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PDF
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C1204B
Abstract: tsop 3021 DIN 3021 STANDARD AA3021
Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BT
16Bit
1Mx16
71bm42
302tib
C1204B
tsop 3021
DIN 3021 STANDARD
AA3021
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PDF
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C1204B
Abstract: No abstract text available
Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BT
16Bit
1Mx16
C1204B
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Untitled
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0108B 64 CHANNEL SEGMENT DRIVER FOR DOT MATRIX LCD 100 QFP FUNCTION The KS0108B is a LCD driver LSI with 64 channel output for dot matrix liquid crystal graphic display system. This device consists o f the dispay RAM, 64 bit data latch 64 bit
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KS0108B
KS0108B
DQ22GS1
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Untitled
Abstract: No abstract text available
Text: K S 5 7C 2016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit CPU core. With an up-to-20-digit LCD direct drive capability and up to 40 pins for LCD segment data
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KS57C2016
up-to-20-digit
16-bit
100-pin
002b3b4
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PDF
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Untitled
Abstract: No abstract text available
Text: KM4 1 V 1 6 0 0 0 B S CMOS DRAM ELECTRONICS 16M x 1 Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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16Mx1
KM41V16000BS
GQ340flb
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PDF
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 1 6 1 04 AS CMOS DRAM ELECTR O NICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,
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16Mx4
KM44C16104AS
bM14E
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366F203BK KMM366F213BK DRAM MODULE KMM366F203BK & KMM366F213BK EDO Mode without buffer 2Mx64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3B is a 2M bit x 64 • Part Identification Dynam ic RAM high density m em ory module. The
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KMM366F203BK
KMM366F213BK
KMM366F213BK
2Mx64
KMM366F20
cycles/64ms
366F20
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KA8601C
Abstract: No abstract text available
Text: KA8601C ELECTRONICS Telephone INTRODUCTION The KA8601C is a monolithic integrated circuit for use in high perfor mance speaker phone system. The KA860IC consists of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator
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KA8601C
KA8601C
KA860IC
003D777
8601C
0-DIP-600B
48-SDf-600
KA8601C)
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Untitled
Abstract: No abstract text available
Text: KM48C514DT CMOS DRAM ELECTRONICS 512 K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48C514DT
512Kx
512Kx8
BH0B90BRBRBHHH
KM48C514DT)
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PDF
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ks57c5016
Abstract: 3.58MHZ crystal oscillator 0011B sequential timer working ks57c50
Text: KS57C5016 ELECTRONICS Microcontroller »DESCRIPTION The KS57C5016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With a DTMF generator, 8-bit serial I/O interface, and two 8-bit timer/counters, the KS57C5016 offers an excellent design
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KS57C5016
KS57C5016
TCL01
KS57C5016)
71bm42
0D321Ã
3.58MHZ crystal oscillator
0011B
sequential timer working
ks57c50
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PDF
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3UA52
Abstract: No abstract text available
Text: K M 4 4 C 1005 D T CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Extended Data Out Quad CAS CM OS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power
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KM44C1005DT
71b4m
3UA52
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PDF
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BV06S
Abstract: SFS9620 bta 600 RG18U
Text: SFS9620 Advanced Power MOSFET FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 1 -5 ß ■ Lower Input Capacitance In = -3 .0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -200V
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SFS9620
-200V
ib4142
GG400G3
BV06S
SFS9620
bta 600
RG18U
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PDF
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DRAM 18DIP
Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its
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KM41C1000CSL
KM41C1000CSL-6
110ns
KM41C1000CSL-7
130ns
KM41C1000CSL-8
150ns
100fiA
100/A
cycle/128ms
DRAM 18DIP
DRAM 256kx4
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