ms08
Abstract: DIODE 839 FDC606P LTC4413
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 839 DUAL IDEAL DIODE-TRIPLE POWER PATH CONTROLLER LTC4413 DESCRIPTION Demonstration circuit 839 is a triple input ideal diode based PowerPath circuit featuring the LTC4413 dual Ideal diode controller with dual Integrated MOSFETs.
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LTC4413
LTC4413
LTC4413.
ms08
DIODE 839
FDC606P
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Untitled
Abstract: No abstract text available
Text: LINEAR PRODUCTS Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Synthesizers/PLLs . . . . . . . . . . . . . . . . . . . . . . . . .825 Attenuators . . . . . . . . . . . . . . . . . . . . . . . . . . . . .163 Technical Ceramics . . . . . . . . . . . . . . . . . . . . . . . .839
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Untitled
Abstract: No abstract text available
Text: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0608-0100 Previous: ADE-208-839 Rev.1.00 Apr 26, 2005 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use.
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HSM276AS
REJ03G0608-0100
ADE-208-839)
HSM276AS
PLSP0003ZC-A
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led light wiring, controller
Abstract: No abstract text available
Text: 839 FIBER SENSORS LED Type Wafer Alignment Sensor HD-T1 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS
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Untitled
Abstract: No abstract text available
Text: SHD126146 SHD126146P SHD126146N SHD126146D SENSITRON SEMICONDUCTOR USE DATA SHEET 321 TECHNICAL DATA DATA SHEET 839, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Forward Voltage Drop 200 V, 15 A Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD126146
SHD126146P
SHD126146N
SHD126146D
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s19 schottky diode
Abstract: HSM276AS SC-59A
Text: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0608-0100 Previous: ADE-208-839 Rev.1.00 Apr 26, 2005 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use.
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HSM276AS
REJ03G0608-0100
ADE-208-839)
HSM276AS
PLSP0003ZC-A
Averag5-900
Unit2607
s19 schottky diode
SC-59A
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AN-839
Abstract: DS3883A DS3884A DS3885 DS3886A
Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL
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64-bit
DS3884A)
DS3885)
an011487
AN-839
DS3883A
DS3884A
DS3885
DS3886A
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case transistor 79A
Abstract: tel 839 b AN-839 C1996 DS3883A DS3884A DS3885 DS3886A
Text: National Semiconductor Application Note 839 Joel Martinez Stephen Kempainen July 1992 INTRODUCTION Futurebus a systems designed today have bus widths of 32 or 64 To support higher bandwidths in the future Futurebus a provides a data width extension of up to 256 bits BTL
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64-bit
DS3884A)
DS3885)
case transistor 79A
tel 839 b
AN-839
C1996
DS3883A
DS3884A
DS3885
DS3886A
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AN-839
Abstract: DS3883A DS3884A DS3885 DS3886A
Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL
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64-bit
DS3884A)
DS3885)
an011487
AN-839
DS3883A
DS3884A
DS3885
DS3886A
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AN-839
Abstract: DS3883A DS3884A DS3885 DS3886A
Text: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL
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64-bit
DS3884A)
DS3885)
AN-839
DS3883A
DS3884A
DS3885
DS3886A
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HSM276AS
Abstract: No abstract text available
Text: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-839 Z Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.
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HSM276AS
ADE-208-839
HSM276AS
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-033-839 REV.: 1 ECN : Page: 1/5 5.0mm Multi-Color Round Type LED Lamps PART NO339-1SRUGW/R2 █ Features : ● Two chips are matched for uniform █ Package Dimensions: light output, wide viewing angle ●
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CDLE-033-839
NO339-1SRUGW/R2
339-1SRUGW/R2
30min
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s19 schottky diode
Abstract: HSM276AS DSA003644
Text: HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-839 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.
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HSM276AS
ADE-208-839
HSM276AS
s19 schottky diode
DSA003644
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3RG7847-4BB
Abstract: 3RG7847-4BF 3RG7848-0CL 3RG7848-4BB 3zx1012 3RG7848-0AC 3RG7842-6SE 3RG7848-0FP 3ZX1012-0RG78-3BS1 3RG78
Text: SIGUARD Light Curtain and Light Grid 3RG7842 Instruction Manual Order No.: 3ZX1012-0RG78-3BS1 GWA 4NEB 839 6047-12 604000 WARNING SIGUARD photo-electric safety systems are intended to protect operators working at or near dangerous machinery. They can only perform this function if
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3RG7842
3ZX1012-0RG78-3BS1
t48-0ER
3RG7848-1AC
3RG7848-1AD
RS-485/RS-232
3RG7848-1AE
RS-232
3RG7848-1AF
3RG7848-4BB
3RG7847-4BB
3RG7847-4BF
3RG7848-0CL
3RG7848-4BB
3zx1012
3RG7848-0AC
3RG7842-6SE
3RG7848-0FP
3ZX1012-0RG78-3BS1
3RG78
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TFR 600
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD DSEI 60-02A C C A Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM
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O-247
0-02A
TFR 600
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HT 1000-4 power amplifier
Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION
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75WATT
HT 1000-4 power amplifier
triac tag 8739
H48 zener diode
TRIAC TAG 8812
Zener diode H48
h48 diode zener
loctite 5145
RF MODULE CIRCUIT DIAGRAM z 10 cd harris
transistor f6 13003
OM370
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600 um laser fiber medical
Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)
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L9399
L9399
600 um laser fiber medical
L929
Peltier element
836 DIODE
LLD1012E01
836 DIODE current
"Peltier element"
AL7 1BW
CW Laser
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OPD3030
Abstract: ir10
Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um
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OPD3030
160um
160um
000Lux
OPD3030
ir10
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839 DIODE
Abstract: PIN PHOTO DIODE OPD0606 068mm DIODE 839
Text: Silicon PIN Photo Diode OPD0606 High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure unit : ㎛ 1.1 Chip Size : 0.68 X 0.68mm 1.2 Chip Thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size
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OPD0606
150um
680um
680um
000Lux
2856k.
839 DIODE
PIN PHOTO DIODE
068mm
DIODE 839
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Untitled
Abstract: No abstract text available
Text: Silicon PIN Photo Diode OPD1616N High Speed Sensitivity High Speed Sensitivity 1. Structure 1.1 Chip Size : 1.60mm X 1.60mm 1.2 Chip Thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Cathode Top : 300um X 300um
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OPD1616N
300um
300um
000Lux
2856k.
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ir10 diode
Abstract: OPD2020 839 DIODE
Text: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um
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OPD2020
170um
170um
000Lux
ir10 diode
OPD2020
839 DIODE
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OPD1616N
Abstract: No abstract text available
Text: Silicon PIN Photo Diode OPD1616N High Speed Sensitivity High Speed Sensitivity unit : ㎛ 1. Structure 1.1 Chip Size : 1.60mm X 1.60mm 1.2 Chip Thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size
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OPD1616N
300um
300um
000Lux
2856k.
OPD1616N
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Untitled
Abstract: No abstract text available
Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um 1.6 Active Area : 2.86mm X 2.86mm
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OPD3030
160um
160um
000Lux
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scr phase angle controller
Abstract: PAYNE Potentiometer 75K 36E-2-250 36D-1-10 thyristor controller schematic 36E-4-80 36D-2-150 Payne thyristor dc controller schematic 36D-4-20
Text: RAME Model ENGINEERING Rt. 29 • Scott Depot VW *25560-0070 E-MAIL - sales@payneng.com DC Output Power Controls www.payneng.com vary AC voltage, which is full-wave rectified to provide an infinitely vari able DC output voltage. Power SCRs and diodes replace contacts
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36D/E_
49a50-450
49a50-600
49a50-600
36de/11
scr phase angle controller
PAYNE Potentiometer 75K
36E-2-250
36D-1-10
thyristor controller schematic
36E-4-80
36D-2-150
Payne
thyristor dc controller schematic
36D-4-20
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