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    MG50J1 Search Results

    MG50J1 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50J1BS11 Toshiba TRANS IGBT MODULE N-CH 600V 50A 3(2-33F2A) Original PDF
    MG50J1BS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50J1BS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50J1ZS40 Toshiba TRANS IGBT MODULE N-CH 600V 50A 5(2-94D2A) Original PDF
    MG50J1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG50J1ZS40 Toshiba N channel IGBT Original PDF
    MG50J1ZS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50J1ZS50 Toshiba 600V 50A IGBT Chopper Module Scan PDF

    MG50J1 Datasheets Context Search

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    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    050 diode

    Abstract: MG50J1ZS40 2-94D2A
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs Max. trr = 0.15µs (Max.) Low saturation voltage : VCE(sat) = 3.5V (Max.)


    Original     		PDF MG50J1ZS40 2-94D2A 050 diode MG50J1ZS40 2-94D2A

    MG50J1ZS40

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE(sat) = 3.5V (max)


    Original     		PDF MG50J1ZS40 2-94D2A MG50J1ZS40

    MG50J1ZS40

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50J1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE(sat) = 3.5V (max) Enhancement-mode


    Original     		PDF MG50J1ZS40 2-94D2A MG50J1ZS40

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


    Original     		PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1BS11 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG50J1 BS11 HIGH PO W E R SWITCHING APPLICATIONS. Unit in mm M O TOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/^s M ax. (Ic = 50A) Low Saturation Voltage : VçE(sat) = 2-TV (Max.) (I<2= 50A)


    OCR Scan     		PDF MG50J1BS11 MG50J1 Volta0J1BS11 50//s 100//sii;

    1ZS40

    Abstract: ft05d
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.


    OCR Scan     		PDF MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40 1ZS40 ft05d

    2-33F1A

    Abstract: MG50J1BS11 253H tcp 8005 CS630
    Text: MG50J1BS11 TOSHIBA MG5 0 J 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 5OA) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 5OA)


    OCR Scan     		PDF MG50J1BS11 MG50J1 2-33F1A 2-33F1A MG50J1BS11 253H tcp 8005 CS630

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG50J1ZS40 MG50J1 2-94D2A MG50J 1ZS40

    igbt toshiba mg

    Abstract: MG50J1ZS40 ZS40
    Text: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)


    OCR Scan     		PDF MG50J1ZS40 MG50J1 2-94D2A RG-51f2 igbt toshiba mg MG50J1ZS40 ZS40

    TOSHIBA IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1BS11 TOSHIBA GTR MODULE M SILICON N CHANNEL IGBT r: ^ n 1 1 R <; 1 1 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed tf—1 . 0 / ' S Max. (Içj —5 0 A) Low Saturation Voltage : V cE(sat) = 2*7V (Max.) (Iq = 50A)


    OCR Scan     		PDF MG50J1BS11 TOSHIBA IGBT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J1ZS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G 5 0 J 1 ZS40 H IGH P O W E R SW IT C H IN G APPLICATIO N S. U n it in mm M O T O R C O N T R O L APPLICATIO N S. B2 2 -FAST-O N -TAB 2- • H igh In p u t Impedance • H ig h s p e e d


    OCR Scan     		PDF MG50J1ZS40 35//S 15/iS

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)


    OCR Scan     		PDF MG50J1BS11

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 50A)


    OCR Scan     		PDF MG50J1BS11

    Untitled

    Abstract: No abstract text available
    Text: MG50J1ZS40 TOSHIBA TOSHIBA GTR MODULE M r ; ^ n SILICON N CHANNEL IGBT 1 1 7 < ; z i n HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed ; tf—0.35/^s Max. trr = 0.15^8 (Max.) • Low Saturation Voltage


    OCR Scan     		PDF MG50J1ZS40

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    MG50Q6ES41

    Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
    Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750


    OCR Scan     		PDF GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1