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    STMicroelectronics STE180NE10

    MOSFET N-CH 100V 180A ISOTOP
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    STE180N Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STE180N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STE180N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STE180N10 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE Original PDF
    STE180N10 STMicroelectronics N-Channel 100 V - 5.5 mohm - 180 A - ISOTOP Power MOSFET Original PDF
    STE180N10 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STE180N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STE180N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STE180NE10 STMicroelectronics N-channel 100V - 4.5m Ohm - 180A - ISOTOP STripFET Power MOSFET Original PDF
    STE180NE10 STMicroelectronics N-channel 100V - 4.5m Ohm - 180A - ISOTOP STripFET Power MOSFET Original PDF
    STE180NE10 STMicroelectronics N-Channel 100 V - 4.5 mohm - 180 A ISOTOP STripFET Power MOSFET Original PDF
    STE180NE10 STMicroelectronics N-CHANNEL 100V - 4.5 mOhm - 180A ISOTOP STripFET POWER MOSFET Original PDF
    STE180NE10 STMicroelectronics N-CHANNEL 100V - 4.5 MOHM -180A ISOTOP STRIPFET POWER MOSFET Original PDF

    STE180N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V STE180NE10

    e180ne10

    Abstract: isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97

    STE180N05

    Abstract: STH65N05
    Text: STE180N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N05 50 V < 0.006 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE180N05 STH65N05 E81743) STE180N05

    isotop mosfet 180A 100V

    Abstract: schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control
    Text: STE180NE10  N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 6 mΩ 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control

    STE180N10

    Abstract: Ultrasonic welding circuit diagram S18000
    Text: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10 Ultrasonic welding circuit diagram S18000

    isotop mosfet 180A 100V

    Abstract: STE180N10
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 isotop mosfet 180A 100V STE180N10

    e180ne10

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 STE180NE10 E180NE10

    Untitled

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s


    Original     		PDF STE180NE10

    STE180N10

    Abstract: STH60N10
    Text: STE180N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N10 100 V < 0.007 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE180N10 STH60N10 E81743) STE180N10

    schematic diagram UPS

    Abstract: Ultrasonic welding circuit diagram Ultrasonic welding circuit isotop mosfet 180A 100V STE180N10
    Text: STE180N10  N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 schematic diagram UPS Ultrasonic welding circuit diagram Ultrasonic welding circuit isotop mosfet 180A 100V STE180N10

    Ultrasonic welding circuit diagram

    Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 Ultrasonic welding circuit diagram schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET

    STE180N10

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10

    e180ne10

    Abstract: E180N STE180NE10 STE180N JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 E180N STE180NE10 STE180N JESD97

    stu9nc80zi

    Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
    Text: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L


    Original     		PDF STT2PF60L STT3PF30L STT3PF20L STT4NF30L STT1NF100 STT5PF20V STT3PF20V STT5NF20V PowerSO-10, ISOWATT218, stu9nc80zi STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    Untitled

    Abstract: No abstract text available
    Text: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE


    OCR Scan     		PDF STE180N05 STH65N05 E81743) 004SS4T

    3C043

    Abstract: No abstract text available
    Text: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N 3C04390 3C043

    STE180N10

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON S T E 1 8 0 N 10 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N10 dss 100 V RDS on Id < 0 .0 0 7 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING)


    OCR Scan     		PDF STE180N10 STH60N10 E81743) STE180N10

    Untitled

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N10

    0n05

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON ULKgraMOeS S T E 1 8 0N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N05 dss 50 V RDS on Id < 0 .0 0 6 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING)


    OCR Scan     		PDF STE180N05 STH65N05 E81743) 0n05

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    SOT227B

    Abstract: STE15NA100 STE180NE10 STE24NA100 STE26NA90 STE40NA60
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su jen\ 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce SOT-227B (ISOTOP) $ up M b i Microelectronics C # e p a npM M eH eH M a: n p M B O flH w e C M C T e M b i, 6 jio k m n M T a H M ^ UPS, 6 n o K M riM T a H M A c n p e o 6 p a 3 0 B a H M e M


    OCR Scan     		PDF OT-227B npe06pa30BaHMeM npe06pa30Baienm flMana30H ot-55Â STE15NA100 STE24NA100 STE26NA90 STE40NA60 STE180NE10 SOT227B