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    Excelitas Technologies Corporation VTB9412H

    SENSOR PHOTODIODE 920NM 2DIP MOD
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    Excelitas Technologies Corporation VTB9412BH

    SENSOR PHOTODIODE 580NM 2DIP MOD
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    VTB9412 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB9412 PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB9412B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB9412BH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE UHDKRES 6MM CER IR Original PDF

    VTB9412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412, VTB9412 VTB9413 VTB9412 VTB9413

    VTB9412BH

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original
    PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH VTB9412BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package


    Original
    PDF VTB9412BH, 9413BH VTB9412BH VTB9413BH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412H, 9413H VTB9412H VTB9413H

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


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    PDF VTB9412B, 9413B VTB9412B VTB9413B

    9413H

    Abstract: rsh8
    Text: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412H, 9413H VTB9412H VTB9413H 9413H rsh8

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated


    Original
    PDF VTB9412, VTB9412 VTB9413

    9413B

    Abstract: VTB9412B VTB9413B
    Text: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These


    Original
    PDF VTB9412B, 9413B VTB9412B VTB9413B 9413B VTB9412B VTB9413B

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


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    PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


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    PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB9412B, 9413B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20F Sm all area planar silicon photodiode in a recessed ceram ic package. The package incorporates an infrared re­ jection filter. These diodes have very high shunt resistance and good blue


    OCR Scan
    PDF VTB9412B, 9413B VTB9412B VTB9413B

    VTB9412

    Abstract: VTB9413 VTB9414 sbe 320 blue
    Text: SbE T> BDBObD^ Q0D1Ü55 G BVCT VTB9412 VTB Process Photodiodes E IflT 8. G V A C T E C T-41-51 P A C K A G E DIMENSIONS inch mm PRO D U CT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Sm all area planar silicon photodiode in a recessed ceram ic package. Th e ch ip


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    PDF 303DbDÃ Q0D1055 VTB9412 T-41-51 VTB9413 VTB9414 2x1012 x1013 0x1013 VTB9412 VTB9413 VTB9414 sbe 320 blue

    VTB9412B

    Abstract: VTB9413B VTB9414B
    Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in


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    PDF 3030bDT 0001DS7 VTB9412B, T-41-51 VTB9412B VTB9413B VTB9414B x1013 VTB9412B VTB9413B VTB9414B

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


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    PDF 365nm, at220nm. VTS2011 VTS20â TB505

    9413B

    Abstract: VTB9413B VTB9412B
    Text: V T B 9 4 1 2 B , 9413B VTB Process Photodiodes I PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared re­


    OCR Scan
    PDF VTB9412B, 9413B VTB9412B 9413B VTB9413B VTB9412B

    Untitled

    Abstract: No abstract text available
    Text: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­


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    PDF 0001DS7 T-41-51 VTB9414B VTB9413B VTB9412B

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


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    PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    VTB9412

    Abstract: VTB9413
    Text: VTB Process Photodiodes V T B 9 4 1 2, 9413 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very high shunt resistance and good blue


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    PDF VTB9412, VTB9412 VTB9413 303DbGc1 VTB9412 VTB9413