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ATC100B3R6BT500XT Price and Stock

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Kyocera AVX Components 100B3R6BT500XT Silicon RF Capacitors / Thin Film 500volts 3.6pF
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Mouser Electronics	100B3R6BT500XT					1 - 10 - 100 - 1000 $4.02 10000 $4.02	Get Quote
American Technical Ceramics Corp ATC100B3R6BT500XT
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Bristol Electronics	ATC100B3R6BT500XT		374			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B3R6BT500XTV Silicon RF Capacitors / Thin Film 500V 3.6pF Tol 0.1pF Las Mkg Vertical
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TTI	100B3R6BT500XTV	Reel			500	1 - 10 - 100 - 1000 $3.35 10000 $3.28	Buy Now

ATC100B3R6BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3	PDF
MRF9030N Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N	PDF
250GX-0300-55-22 Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 250GX-0300-55-22 j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101	PDF
2595MHz Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 2595MHz	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 0, 9/2007 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3 A114 A115 AN1955 C101 JESD22 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT	PDF
567 tone Abstract: A114 A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to	Original	MRF7S27130H MRF7S27130HR3 MRF7S27130HSR3 MRF7S27130HR3 567 tone A114 A115 AN1955 C101 JESD22 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz	PDF