ATC600F180JT250XT Search Results

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Kyocera AVX Components 600F180JT250XT Silicon RF Capacitors / Thin Film 250volts 18pF 5% NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F180JT250XT		5,918			1 $1.5 10 $0.753 100 $0.68 1000 $0.517 10000 $0.44	Buy Now
TTI	600F180JT250XT	Reel			500	1 - 10 - 100 - 1000 $0.512 10000 $0.428	Buy Now

ATC600F180JT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3	PDF
ATC600S10 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10	PDF
atc 17-25 Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.	Original	MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5	PDF
A5M06 Abstract: Transistor Z17 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17	PDF
ATC600F470BT250XT Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor	PDF
ATC600S2R7BT250XT Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT	PDF
ATC600F241JT Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12	PDF
GSC356-HYB2500 Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3 GSC356-HYB2500 ATC600F1R0JT250XT atc600f100jt250xt J930 ATC600F0R8JT250XT	PDF
GSC356-HYB2500 Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180 Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8P23080H MRF8P23080HR3 MRF8P23080HSR3 GSC356-HYB2500 GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180	PDF
A5M0 Abstract: IC 2 5/A5M06 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6	PDF
MRF8P29300H Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	MRF8P29300H MRF8P29300HR6 MRF8P29300HSR6 MRF8P29300HR6 MRF8P29300H ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT	PDF