Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ATE 2N60 Search Results

    ATE 2N60 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8968001SA Texas Instruments Octal General-Purpose Interface Bus Transceiver 20-CFP -55 to 125 Visit Texas Instruments Buy

    ATE 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6075 equivalent

    Abstract: 2N6068 an526 screw MAC77-8 701o MAC77 WD19 Triac 2N6075 an526 2000C
    Text: ? 2N6068 thru 2N6075 ——— SILICON BiE}l SECTIONAL. designed .,. primarily light dimmers, or wherever needed. state fol’ full-wave motor full-wave silicon for either polarity negative gate triggering. e All o Small, Rugged, from c f applied solid-state


    Original     		PDF 2N6068 2N6075 MAC77-8) 5U651 2n6075 equivalent 2N6068 an526 screw MAC77-8 701o MAC77 WD19 Triac 2N6075 an526 2000C

    MAC12SM

    Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
    Text: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA


    Original     		PDF O-226AA) 2N5060 2N5061 2N5062 2N5064 MCR100-3 MCR100-4 MCR100-6 MCR100-8 OT-223 MAC12SM MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 2N6058

    4410b

    Abstract: 2n6043 2N6044 2N6045
    Text: 3875081 G E SOLID ST ATE 01 d F Ï 3Û7SDÔ1 DQlVEEb b T d Darlingion Power Transistors ;_ 5 _ T- J J 5 _ File Number 1151 2N6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF 2N6043, 2N6044, 2N6045 100-Volts, 2N6044) 2N6045) O-220AB 4410b 2n6043 2N6044 2N6045

    Triac 2N6075

    Abstract: 2N6075 triac 2N6075 2N60758 2N6073 MOTOROLA 2N6075 MOTOROLA motorola voltage reference 2N6074 TRIAC 2N6071 A 2N6072
    Text: MOTOROLA SC öl -CDI ODES/OPTO} » F |t 3 t ? a s s □□7ciaoa 3 T - 2 J T - Í3 2 N 6 0 7 1 ,A ,B S e n sitiv e G ate T ria cs thru Silico n Bidirectional Thyristors 2 N 6 0 7 5 ,A ,B . . . designed primarily for full-wave ac control applications, such as light dimmers,


    OCR Scan     		PDF 2N6071 2N6075 2N6071A Triac 2N6075 2N6075 triac 2N6075 2N60758 2N6073 MOTOROLA 2N6075 MOTOROLA motorola voltage reference 2N6074 TRIAC 2N6071 A 2N6072

    6071A

    Abstract: 2N6075A 2N6075 MOTOROLA MBS4993 2N6073 TRIAC Z Triac 2N6075 6071B 2N6071 MOTOROLA 2N6074
    Text: öl M O T O R O L A SC -CDIODES/OPTO} » F | t 3 t ? a s s □□7ciaoa 3 T - 2 J T - Í3 2 N 6 0 7 1 ,A ,B thru 2 N 6 0 7 5 ,A ,B S e n sitiv e G ate T riacs Silicon Bidirectional Thyristors . . designed primarily for full-wave ac control applications, such as light dimmers,


    OCR Scan     		PDF 2N6071 2N6075 6071A 2N6075A 2N6075 MOTOROLA MBS4993 2N6073 TRIAC Z Triac 2N6075 6071B 2N6071 MOTOROLA 2N6074

    SOT-252 20v

    Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
    Text: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T


    OCR Scan     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60 SOT-252 20v N-Channel mosfet 600v 1a U26S 25CC TSM2N60CH TSM2N60CP marking code 749 diode BBC u035

    p2n60

    Abstract: ATE 2N60 TP2N60 IC D 2N60 2n55 mtp2n55 S550A 2n60 MOSFEt
    Text: MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA M T P 2N 55 M T P 2N 60 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S T M O S P O W ER FETs 2 AM PERES These TM O S P ow er FETs are designed fo r high voltag e , high


    OCR Scan     		PDF MTP2N55, p2n60 ATE 2N60 TP2N60 IC D 2N60 2n55 mtp2n55 S550A 2n60 MOSFEt

    6075A

    Abstract: 6073b 2N6073 ab 2N6071, A, B 2N6073, A, B 2N6075, A, B 2N6073 MOTOROLA 6071A ic c 6073 2n6073 mbs4993
    Text: 2 N 6 0 7 1 ,A ,B 2 N 6 0 7 3 ,A ,B 2 N 6 0 7 5 ,A ,B S e n s itive G ate Triacs Silicon Bidirectional Thyristors . . . desig ned p rim a rily fo r fu ll-w a v e ac c o n tro l ap plication s, such as lig h t d im m ers, m o to r con trols, heating co n tro ls and p o w e r su p p lie s; or w h e re ve r fu ll-w a ve silicon


    OCR Scan     		PDF 2N6071, 2N6071 2N6073 2N6075 6075A 6073b 2N6073 ab 2N6071, A, B 2N6073, A, B 2N6075, A, B 2N6073 MOTOROLA 6071A ic c 6073 mbs4993

    Unijunction

    Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
    Text: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N


    OCR Scan     		PDF 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2n6116 2n6117 2n6118 Unijunction Programmable unijunction PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit

    2N6082

    Abstract: transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6082 T h e R F L in e 25 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N NPN S IL IC O N RF POWER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in com m ercial and industrial equipm ent operating to


    OCR Scan     		PDF 2N6082 I14AWG. 2N6082 transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70

    2N6027 MOTOROLA

    Abstract: 2N6027 2N6028 MOTOROLA 2N6028 Q375 2N6028 CIRCUIT 2n6027 circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program” unijunction characteristics such as R b b . ri, ly, and ip by merely selecting two resistor values. Application includes


    OCR Scan     		PDF TD17b 2N6027 2N602S 2N6028 10kfl 2N6027 MOTOROLA 2N6028 MOTOROLA Q375 2N6028 CIRCUIT 2n6027 circuit

    2N6084 equivalent

    Abstract: MRF-226 MRF221 MRF226
    Text: MRF221 See 2N6081 MRF224 (See 2N6084) MOTOROLA SEM ICONDUCTOR TECHNICAL DATA T he R F Line 13 W - 225 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt large-signal power amplifier applica­ tions in com munication equipm ent operating at 225 MHz.


    OCR Scan     		PDF MRF221 2N6081) MRF224 2N6084) 2N6084 equivalent MRF-226 MRF221 MRF226

    2n6028

    Abstract: 2n6027 ha1818 motorola programmable unijunction 2n6027 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction TVansistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to “program1’ unijunction characteristics such as r BB. fl. IV. ar|d 'P by merely selecting two resistor values. Application includes


    OCR Scan     		PDF 2N6027 2N6028 2N6028 ha1818 motorola programmable unijunction 2n6027 equivalent

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    2N6028

    Abstract: 2N6027 MOTOROLA 2n6027
    Text: 2N6027 2N6028 Programmable Unijunction Transistors Silico n Program m able Unijunction T ran sisto rs P U Ts 40 V O L TS 300 m W . . . d e sig n e d to enable the e n g ineer to "p ro g ra m " unijunction ch aracteristics such as R b B ’ V i IV ’ ar|d Ip by m e re ly selecting tw o re sisto r va lu e s. A p p licatio n includ es


    OCR Scan     		PDF 2N6027 2N6028 2N6028 2N6027 MOTOROLA 2n6027

    GE 2N6027

    Abstract: 2N6028 MOTOROLA 2N6027 ge 6028F
    Text: 2N6027 2N6028 P ro gram m ab le Unijunction T ran sisto rs Silicon Program m able Unijunction Transistors . . . d e s ig n e d to e n a b le the e n g in e e r to " p r o g r a m " u niju nction ch a racteristics su c h a s R g g , 7j, ly, a n d Ip b y m e re ly sele ctin g tw o re sisto r va lu es. A p p lic a tio n in clu d e s


    OCR Scan     		PDF 2N6027 2N6028 GE 2N6027 2N6028 MOTOROLA 2N6027 ge 6028F

    SCR Handbook, rca

    Abstract: C106Y RCA 559 TO3 SCR Handbook, rca s2061a
    Text: mm • H Silicon Controlled Rectifiers SCR’s Type Selection Charts Voltage Current !T R C A (R M S) Types A IT S M Temp. V DROM V RROM V 50/60 Hz A Max.-Gate Char. IG T V GT mA V 3.5 18.5/20 45 200 2.5 100 15 30 50 100 3.14 14/15 45 200 0.5 0.8 2.5 100


    OCR Scan     		PDF C106Q C106Y C106D C106M TQ-202AB S122F S122A S122B S122D S122E SCR Handbook, rca RCA 559 TO3 SCR Handbook, rca s2061a

    UJT 2N2646 specification

    Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


    OCR Scan     		PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    2n2407

    Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
    Text: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A


    OCR Scan     		PDF 2N2060 2N2060A 2N20609 2N2223 2H2223A 2N2453 2N24S3A 2N2480 2N24S0A 2N2639 2n2407 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 Programmable unijunction