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    8542A

    Abstract: ND6281-3A ND6281-3D E 3A diode nec x-band diode 3D
    Text: N E C / 1SE CALIFORNIA NEC D bM27Mm G O O nSB M ND6281-3A ND6281-3D X-BAND SILICON PIN DIODE FEATURES OUTLINE DIMENSIONS Units In mm OUTLINE 3A* • L O W D RIVING P O W E R • W ID E R F R E S IS T A N C E R A N G E 4.0 MIN.I. —— • LOW C O S T j?—


    OCR Scan     		PDF ND6281-3A ND6281-3D ND6281-3A, -j250 8542A ND6281-3D E 3A diode nec x-band diode 3D

    of all 74 ic series

    Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
    Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S


    OCR Scan     		PDF Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925

    2SA711

    Abstract: NE66912 TIS90 2SA711(KE) NE71100 NE71111 S21E NE711 08/bup 3110 transistor
    Text: NEC/ CALIFORNIA b4 2?m M QDQ2M55 QS4 HINECC 5bE D T -3 \-n SEC PNP SILICON HIGH SPEED SWITCHING TRANSISTOR NE71100 NE71111 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH P R O D U C T fr = 1.0 GHz The NE711 series of PNP silicon transistors is designed for HF


    OCR Scan     		PDF b427mM QDQ2M55 NE71100 NE71111 NE711 2SA711 NE66912 TIS90 2SA711(KE) NE71111 S21E 08/bup 3110 transistor

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


    OCR Scan     		PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223