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    C25 SMD Search Results

    C25 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd
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    C25 SMD Price and Stock

    Chip Quik Inc SMDC-25G1000

    Liquid Dispensers & Bottles Dispensing Needles / Syringe Tips Conical Plastic - 25 gauge (Tapered Tip, 1.25in) Sold per each Pcs
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDC-25G1000 1,500
    • 1 $0.13
    • 10 $0.13
    • 100 $0.13
    • 1000 $0.13
    • 10000 $0.13
    Buy Now

    Chip Quik Inc SMDC-25G-QTY10

    Liquid Dispensers & Bottles Dispensing Needles / Syringe Tips 10 Pack Conical Plastic - 25 gauge (Tapered Tip, 1.25in)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMDC-25G-QTY10 13
    • 1 $2.95
    • 10 $2.95
    • 100 $2.95
    • 1000 $2.95
    • 10000 $2.95
    Buy Now

    C25 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


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    PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247

    BB1871

    Abstract: BB187 marking code 4 SC-79
    Text: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 11 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners.


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    PDF BB187 OD523 SC-79) OD523 SC-79 BB1871 marking code 4 SC-79

    Untitled

    Abstract: No abstract text available
    Text: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 12 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners. · Voltage controlled oscillators VCO .


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    PDF BB187 OD523 SC-79) OD523 SC-79

    mj 340

    Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
    Text: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600


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    PDF IXSX50N60AU1 IXSX50N60AU1S O-247 50N60AU1S) IXSX50N60AU1S mj 340 MJ340 50n60 50N60AU1 IXSX50N60AU1

    Untitled

    Abstract: No abstract text available
    Text: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz


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    PDF BB182B OD523 SC-79) OD523 SC-79

    transistor 182B

    Abstract: MARKING C SOD523 marking code 4 SC-79
    Text: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz


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    PDF BB182B OD523 SC-79) OD523 SC-79 transistor 182B MARKING C SOD523 marking code 4 SC-79

    IXGH32N50B

    Abstract: IXGH32N50BS
    Text: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V


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    PDF IXGH32N50B IXGH32N50BS O-247 32N50BS) IXGH32N50B

    32N60BU1

    Abstract: 32N60B h32n60b e5200 32N60BU
    Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C


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    PDF IXGH39N60B IXGH39N60BS O-247 39N60BS) 32N60BU1 32N60B h32n60b e5200 32N60BU

    igbt to247

    Abstract: s9011 IXGH24N60AU1S ixgh24N60
    Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25


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    PDF IXGH24N60AU1 IXGH24N60AU1S T0-247 24N60AU1S) O-247 24N60AU1 B2-41 1XGH24N68AU1 W6H24WWMMl 24N80AU1 igbt to247 s9011 IXGH24N60AU1S ixgh24N60

    40N30BD1

    Abstract: No abstract text available
    Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o


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    PDF IXGH40N30BD1 IXGH40N30BD1S O-247SMD 40N30BD1S) O-247 360VTj 40N30BD1

    32N60BU1

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C


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    PDF 32N60BU1 32N60BU1S O-247 B2-77 B2-78

    smd diode 819

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C


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    PDF IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819

    32N50

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


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    PDF 32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50

    IXGH32N60AU1

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90


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    PDF 32N60AU1 32N60AU1S 4b6b22b IXGH32N60AU1 IXGH32N60AU1S 4bflb22b 0003bQb IXGH32N60AU1

    3un6

    Abstract: No abstract text available
    Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat


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    PDF 30N60BD1 30N60BD1 O-268 freq00 3un6

    diode SMD MARKING CODE JV

    Abstract: NA MARKING SOT23 smd code marking sot23 marking code NA sot23 BBY40 Diode smd code cm marking 0K
    Text: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS ¿ • Electronic tuning in VHF television tuners, band A up to 160 MHz.


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    PDF BBY40 BBY40 25the 7110flBb G10S3C diode SMD MARKING CODE JV NA MARKING SOT23 smd code marking sot23 marking code NA sot23 Diode smd code cm marking 0K

    BBY40

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz.


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    PDF BBY40 BBY40 25ther 7110flBb

    IXSX35N120AU1

    Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
    Text: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C


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    PDF 247TM IXSX35N120AU1 IXSX35N120AU1S IXSX35N120AU1S) lo150 O-247 35N120AU1 35N12QAU1S K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download

    50N60

    Abstract: 50N6
    Text: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2


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    PDF 247TM IXSX50N60AU1 IXSX50N60AU1S 50N60AU1S) O-247 247TM 50N60AU1) 50N60 50N6

    E25 SMD diode

    Abstract: No abstract text available
    Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2


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    PDF IXSX35N120AU1 IXSX35N120AU1S O-247TM IXSX35N120AU1S) O-247TM IXSX35N12 IXSX35N12QAU1 E25 SMD diode

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C


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    PDF IXSX35N120AU1 IXSX35N120All O-247â IXSX35N120AU1S) IXSX35N120AU1S

    ic tea 1090

    Abstract: smd tea 521 27AD
    Text: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO


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    PDF IXGX50N60AU1 IXGX50N60AU1S T0-247 50N60AU1S) O-247 s1997 ic tea 1090 smd tea 521 27AD

    smd diode 819

    Abstract: 30n60
    Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO


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    PDF IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) typ200 B2-58 smd diode 819 30n60

    Untitled

    Abstract: No abstract text available
    Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600


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    PDF IXGX50N60AU1 IXGX50N60AU1S O-247