NE76038
Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated
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AN1015
NE76038)
NE76038
uPC2710
uPC2721
AN1015
UPC2710T
UPC2721GR
low noise block down converter
1 henry INDUCTOR
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
L4* Low noise
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2N3643
Abstract: opamp 747 AN80901 3.3k variable resistor AN8090 resistor 3.3k FET LNA 747 opamp eastern nec microwave
Text: California Eastern Laboratories APPLICATION NOTE AN80901 Two Stage GaAs FET LNA Bias Supply INTRODUCTION This regulator is recommended to bias a two stage, grounded source GaAs FET LNA with constant drain currents1. With minor modification, two additonal bias stages could be added to this circuit.
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AN80901
2N3643
2N3643
opamp 747
AN80901
3.3k variable resistor
AN8090
resistor 3.3k
FET LNA
747 opamp
eastern
nec microwave
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UPG2118K
Abstract: AN1043 c2539 2.4GHz Power Amplifier transistor upg2118
Text: California Eastern Laboratories APPLICATION NOTE AN1043 Design of Power Amplifier Using the UPG2118K I. Introduction II. Block Diagram NEC’s UPG2118K is a 3-stage 1.5W GaAs MMIC power ampliÞer that is usable from approximately 800 to 2500MHz. The UPG2118K is an excellent PA candidate
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AN1043
UPG2118K
UPG2118K
2500MHz.
Vref12
AN1043
c2539
2.4GHz Power Amplifier transistor
upg2118
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ultrasonic probe ge
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes
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AN-1001
ultrasonic probe ge
GaAs MMIC ESD, Die Attach and Bonding Guidelines
GaAs FET chip
ultrasonic bond
AN-1001
Ultrasonic bubble
kulicke Soffa
nec microwave
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NE25139
Abstract: active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73
Text: California Eastern Laboratories APPLICATION NOTE AN1020 Active Mixer Design Using the NE25139 Dual Gate MESFET Active mixers have some advantages over passive double balanced mixers. The most obvious advantage is that they provide gain instead of loss. This reduces the gain requirements on the low noise amplifier and the IF stage in a receiver.
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AN1020
NE25139
NE25139
active double balanced mixer
dual gate fet
passive mixer
passive mixer downconverter
AN1020
NE25139T1U73
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gunn diode ghz s-parameter
Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.
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AN1035
p-7065.
AN1023,
gunn diode ghz s-parameter
impatt diode
impatt
C band FET transistor s-parameters
fet dro 10 ghz
x-band dro
california bearing ratio test
DRO lnb
25 MHz $ pin Crystal Oscillators THrough hole type
Dielectric Resonator Oscillator DRO
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HP8510
Abstract: HP8510B network analyzer operating and programming calibration definition LEMO Hewlett-Packard transistor microwave AN1041 38016 agilent ads P5668
Text: California Eastern Laboratories APPLICATION NOTE AN1041 Designing And Characterizing TRL fixture calibration standards for device modeling ABSTRACT CEL uses a variety of methods to accurately measure and characterize RF and microwave devices in support of
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AN1041
HP8510
p56-68.
HP8510B network analyzer operating and programming
calibration definition
LEMO
Hewlett-Packard transistor microwave
AN1041
38016
agilent ads
P5668
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AN3000
Abstract: bipolar ic AN3000 PS7221 coil gold detector nec ps7241 PHOTOCOUPLER SERIES with gnd ps7113 tr fet 1A photo thyristor application TRANSISTOR SMD mos fet
Text: California Eastern Laboratories A PPLICATION N OTE Solid State Relays Overview And Applications AN3000 CONTENTS 1. INTRODUCTION. 2
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AN3000
AN3000
bipolar ic AN3000
PS7221
coil gold detector
nec ps7241
PHOTOCOUPLER SERIES with gnd
ps7113
tr fet 1A
photo thyristor application
TRANSISTOR SMD mos fet
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NE34018 equivalent
Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and
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AN1033
AN1022
NE34018 equivalent
FET model
AN1022
AN1033
NE34018
Alpha 1000 GaAsFET
as 15-f
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UPG2150T5L
Abstract: eastern NEC RF Switch AN1048 WIFI switch 802.11 Switch
Text: A p p l i c at i o n N o t e California Eastern Laboratories AN1048 UPG2150T5L Typical Application For The UPG2150T5L Switch Explanation Of Typical Application For This Switch: The uPG2150T5L SP3T switch has been designed specifically for devices that enable both Wi-Fi 802.11
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AN1048
UPG2150T5L
UPG2150T5L
eastern
NEC RF Switch
AN1048
WIFI switch
802.11 Switch
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Untitled
Abstract: No abstract text available
Text: California Eastern Laboratories 750MHz Power Doubler and Push-Pull CATV Hybrid Modules Using Gallium Arsenide D. McNamara*, Y. Fukasawa*, Y. Wakabayashi*, Y. Shirakawa*, Y. Kakuta* *California Eastern Laboratories Product Development Engineering 4590 Patrick Henry Drive
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750MHz
750MHz.
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GFMB3
Abstract: GFEB4 GFWB3 UVS02 UVS04 GFKE2 Dielectric Filters BP204 GFMB6 TVS04
Text: Printed Filters & Dielectric Filters For FM Radio & TV Bands Country Over seas Chip Wide Leaded Chip Japan Leaded TV Audio Eastern Europe Leaded Leaded FM*— 'TV Separator Leaded Chip VHF-UHF Separator Leaded 1 GFMB3 GFWE2 GFMB6 GFMB5 GFMB7 GFMB1 GFWE1
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TVS05
TVS04
TVS02
UVS02
59-108/165-216Cosine
60X45X13
178MHz
736MHM532
84MHZ-1533
048MHZ-1632
GFMB3
GFEB4
GFWB3
UVS04
GFKE2
Dielectric Filters
BP204
GFMB6
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MARKING E4 "Pin Diode"
Abstract: PS7200J mark code e4 diode KLS7-DS-02-B-00 DIP
Text: California Eastern Laboratories Solid State Relays Selection Guide NUMBERING SYSTEM PS7XXXL-XX-XX Taping E3/E4 F3/F4 All SOP products are available in T&R and most DIP product are available in Surface Mount/ T&R. 1 Form A/1 Form B 2 Form A/2 Form B Dual 1 Form A/1 Form B
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A11/A15
PS71XX
PS72XX
PS73XX
PS75XX
PS78XX
SS-441-01-55
SS-EN-60-950
SFS-EN-60-950
NEK-EN-60-950
MARKING E4 "Pin Diode"
PS7200J
mark code e4 diode
KLS7-DS-02-B-00 DIP
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MD 202
Abstract: 2053 46120 md 2102 80C51 BV 202 O 206
Text: Philips Semiconductors 80C51 microcontroller development system support DEVELOPMENT SYSTEM CONTACTS COMPANY Ashling Microsystems Limited ADDRESS Plassey Technological Park Limerick, Ireland TELEPHONE 353 61 334 466 Eastern Systems Inc. 160 East Main Street
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80C51
MD 202
2053
46120
md 2102
BV 202 O 206
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EC950
Abstract: SS-EN-60-950
Text: California Eastern Laboratories Solid State Relays Selection Guide NUMBERING SYSTEM PS7XXXL-XX-XX Taping E3/E4 F3/F4 All SOP products are available in T&R and most DIP product are available in Surface Mount/ T&R. 1 Form A/1 Form B 2 Form A/2 Form B Dual 1 Form A/1 Form B
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A11/A15
PS71XX
PS72XX
PS73XX
PS75XX
St41-01-55
SS-EN-60-950
SFS-EN-60-950
A21409
EC950
SS-EN-60-950
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. O P T O C O U P L E R S + S O L I D S TAT E R E L AY S www.cel.com 2013 California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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AN1017
Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
Text: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead
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AN1017
mid1960s,
OT-23
OT-323
24-Hour
AN1017
NE680
NE685
NE68519
NE68530
NE68533
stencil tension
AN-1017
FS710
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mifare ztm
Abstract: smartmx mifare pro vehicle tracking system MF CM200 MIFARE DETAILS of RFID use automatic vehicle parking system Citizen CM200 Secure Access to MIFARE Memory on Dual Interface Smart Card ICs Demo Software Desfire User Interface mf rc500
Text: O N T H E M OV E Identification News VOLUME 4 ISSUE 3 Semiconductors NOVEMBER 2002 Security: today’s big issue in the connected world Enabling e-government Supply chain management and beyond Eastern Europe opts for extensive multi-application smart cards
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cascode transistor array VCO
Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually
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AN1028
UPA808T
cascode transistor array VCO
UPA807T
RF transistors with s-parameters
UPA802T
cascode transistor array
AN1028
S21E
UPA806T
transistor RF S-parameters
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Untitled
Abstract: No abstract text available
Text: Winchester Electronics Corporation Acquires Electrical Specialty Products Inc. | Business Wire Page 1 of 2 August 08, 2012 09:00 AM Eastern Daylight Time Winchester Electronics Corporation Acquires Electrical Specialty Products Inc. Company Expands Leadership in Connector Products
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70-year
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Untitled
Abstract: No abstract text available
Text: Winchester Electronics Corporation Acquires Clements National Company | Business Wire Page 1 of 2 August 15, 2012 09:00 AM Eastern Daylight Time Winchester Electronics Corporation Acquires Clements National Company WALLINGFORD, Conn.- BUSINESS WIRE -Winchester Electronics Corporation (“Winchester Electronics”) announced the
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70-year
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ABC016002
Abstract: 16 pin diagram of lcd display 16x2 16X2 LCD rohs ABC016002C 16x2 lcd method 24 pin diagram of lcd display 16x2 ABC01600 FAV-ABC016002C16-R-01 ABC016002C16-YHY-R KS0066 lcd
Text: 深圳秋田视佳实业有限公司 SHENZHEN AV-DISPLAY CO.,LTD 地址：深圳市华侨城东部工业区文昌街东北 C-7 栋 Address: North East C-7 Building, Wenchang Street Eastern District, OCT, ShenZhen, China 电话: 086 0755-26919178 传真: (086)0755 -26911092
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ABC016002C16-YHY-R
Jun-02-2006
ABC016002
16 pin diagram of lcd display 16x2
16X2 LCD rohs
ABC016002C
16x2 lcd method
24 pin diagram of lcd display 16x2
ABC01600
FAV-ABC016002C16-R-01
ABC016002C16-YHY-R
KS0066 lcd
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Kaga Components
Abstract: Naltron
Text: . 6 SALES OF OFFICES REP. & DISTRI BUTORS UNITED STATES OF AMERICA Florida Naltron Corporation Eastern Area The Lincoln Center 5401 W. Kennedy Blvd., Ste. 1060 Tampa, FL 33609 Sales Contact: Steve Nalls email: Tpa4nc@aol.com Alabama Eagle Components 800 Airport Road
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Warmins-08-8277-6027
Kaga Components
Naltron
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