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    FET LOW NOISE Search Results

    FET LOW NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    FET LOW NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1402B

    Abstract: MGF1402
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1402B MGF1402B MGF1402

    MGF1303B

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1303B MGF1303B

    MGF1403B

    Abstract: GaAs FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1403B MGF1403B GaAs FET

    MGF1302

    Abstract: gaas fet "GaAs FET" Low Noise Gaas
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1302 MGF1302 gaas fet "GaAs FET" Low Noise Gaas

    3SK165A

    Abstract: 3SK165A-0 3SK165A-1 nf 820
    Text: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation


    Original     		PDF 3SK165A 3SK165A 800MHz M-254 3SK165A-0 3SK165A-1 nf 820

    6323 GA

    Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE


    Original     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 6323 GA transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor

    3SK165A

    Abstract: 3SK165A-1 3SK165A-0
    Text: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation


    Original     		PDF 3SK165A 3SK165A 800MHz M-254 3SK165A-1 3SK165A-0

    D450 Nchannel

    Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
    Text: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE


    Original     		PDF NE76118 NE76118 NE76118-T1 NE76118-T2 D450 Nchannel C10535E NE76118-T1 NE76118-T2 NEC 3536

    MGF1908A

    Abstract: No abstract text available
    Text: June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF1908A MGF1908A

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    MGF1907A

    Abstract: MGF1907
    Text: June/2004 June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF1907A MGF1907A MGF1907

    amplifiers

    Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
    Text: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers


    OCR Scan     		PDF

    mgf1908

    Abstract: MGF1908A MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and


    OCR Scan     		PDF MGF1908A MGF1908A MGF1303B. 12GHz mgf1908 MGF1303B

    NEC 3536

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •


    OCR Scan     		PDF NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536

    Untitled

    Abstract: No abstract text available
    Text: GaAs Devices • Hyper FET Hetero Structured InGaAs FET . 6 • Ultra-Low Noise Hyper F E T . 6 ■ RF Integrated • Wide-Band, Low-Noise A m plifiers. 6


    OCR Scan     		PDF BG2011SM

    MGF1903B

    Abstract: MGF1303B 903b mgf1903
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1903B MGF1303B. MGF1903B 12GHz MGF1303B 903b mgf1903

    fet K 793

    Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic


    OCR Scan     		PDF b241fl2tà MGF1402B 12GHz MGF1402B 157MIN. fet K 793 MGF1402 cdb 838 S22VS Q017 91 569 775 -35 S 30ria

    063 793

    Abstract: transistor v63
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


    OCR Scan     		PDF NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A " f C O ^ IflfUUf ^ J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER The TA75071P is a J-FET input low-noise operational amplifier with low input bias and offset current, fast slew rate and wide bandwidth.


    OCR Scan     		PDF TA75071P TA7504P 200pA 18nV//Hz Circu12 RL-10kn CL-100pF

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905

    817 CN

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1903B MGF1903B F1303B.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a


    OCR Scan     		PDF MGF1402B 12GHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and


    OCR Scan     		PDF MGF1902B MGF1902B MGF13Q2. 12GH2 30rnA