FIELD-EFFECT TRANSISTOR Search Results

FIELD-EFFECT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

FIELD-EFFECT TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MPF102 equivalent transistor Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or	Original	AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET	PDF
BF511 Abstract: Bf513 Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513	PDF
BF510 Abstract: BF511 BF512 BF513 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513	PDF
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola	PDF
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE	PDF
Silicon P-Channel Junction FET sot23 Abstract: BF245A BF245B BF245C BF545A BF545B J210 J211 J212 PMBFJ210 Text: DISCRETE SEMICONDUCTORS Selection guide Small-signal Field-effect Transistors and Diodes Supersedes data of 1999 May 14 1999 May 21 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS	Original	PMBFJ210 PMBFJ211 BAP50-05 BAP51-03 OD323 BAP64-02 OD523 BAP64-03 BAP64-04 Silicon P-Channel Junction FET sot23 BF245A BF245B BF245C BF545A BF545B J210 J211 J212 PMBFJ210	PDF
code marking NEC Abstract: date code marking NEC g1683 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2610 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2610, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for applications such as power switch of portable machine and so on.	Original	PA2610 PA2610, PA2610T1C code marking NEC date code marking NEC g1683	PDF
MP-25 Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.	OCR Scan	NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
MFE5000 Abstract: No abstract text available Text: MFE5 0 0 0 silicon SILICON P-CHANNEL ENHANCEMENT MOS FIELD EFFECT QUAD TRANSISTOR MOS FIELD-EFFECT QUAD TRANSISTOR P-CHANNEL • Monolithic Construction Provides Improved Temperature Tracking • Four Field Effect Transistors in One Package Cut Assembly Costs	OCR Scan	MFE5000 MFE5000	PDF
MFE4007 Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012 Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types	OCR Scan	MFE4007 MFE4012 MFE4007 mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012	PDF
MFE3020 Abstract: MFE3021 Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C\| MOS Field-Effect Transistors de signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —	OCR Scan	MFE3020 MFE3021 MFE3021) MFE3020 MFE3021	PDF
Untitled Abstract: No abstract text available Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs	OCR Scan		PDF
IRFD311 Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v	PDF

IRFD110 Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112 Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112	PDF
linear applications of power MOSFET IRF640 Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643 Text: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640	PDF
mosfet 1RF740 Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743 Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRF740, IRF741, IRF742, IRF743 IRF743 IRF74 75BVdss mosfet 1RF740 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740	PDF
IRFF130 Abstract: IRFF131 IRFF132 IRFF133 C 3259 Text: -Standard Power MOSFETs IRFF130, IRFF131, IRFF132, IRFF133 File Num ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRFF130, IRFF131, IRFF132, IRFF133 0V-100V 92CS-33741 IRFF132 IRFF133 IRFF130 IRFF131 C 3259	PDF
IRF540 Abstract: irf540 27 MHz IRF540 n-channel MOSFET IRF541 IRF542 mosfet js8 irf540 "27 MHz" MOSFET IRF540 IRF543 power MOSFET IRF540 Text: - Standard Power MOSFETs File N um ber IRF540, IRF541, IRF542, IRF543 2309 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRF540, IRF541, IRF542, IRF543 IRF543 IRF540 irf540 27 MHz IRF540 n-channel MOSFET IRF541 IRF542 mosfet js8 irf540 "27 MHz" MOSFET IRF540 power MOSFET IRF540	PDF
IRFP250 Abstract: irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252 IRFP253 Text: -Standard Power MOSFETs File N um ber IRFP250, IRFP251, IRFP252, IRFP253 2330 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	IRFP250, IRFP251, IRFP252, IRFP253 IRFP253 75BVdss IRFP250 irfp250 mosfet mosfet irfp 250 pin out MOSFET IRFp250 irfp250 applications IRFP251 IRFP252	PDF
IRP623 Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162 Text: - Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE	OCR Scan	IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162	PDF
2N4391 Abstract: 2n4393 2N43 J3060 2N4392 Text: PRELIMINARY SPECIFICATION SEC FIELD-EFFECT TRANSISTORS ELECTRON DEVICE 2N4391,2N4392,2N4393 HIGH SPEED SW ITCHING AND CHOPPER N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION The 2N 4391, 2N 4392, 2N 4393 are depletion mode ju n ctio n field effect transistors, designed fo r high speed sw itching and	OCR Scan	2N4391 2N4392 2N4393 2N4391) 2n4393 2N43 J3060	PDF
MPF970 Abstract: MPF971 MPF910 Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS	OCR Scan	MPF970 MPF971 MPF970 MPF971 MPF910	PDF
IRF221 Abstract: MOSFET IRF220 IRF222 IRF220 IRF223 IRF22 Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 File Number 1567 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors "-channelenhancementmode 4.0A and 5.0A, 1I50V-200V	OCR Scan	IRF220, IRF221, IRF222, IRF223 1I50V-200V 92CS-33741 IRF222 IRF221 MOSFET IRF220 IRF220 IRF22	PDF

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FIELD-EFFECT TRANSISTOR Search Results

FIELD-EFFECT TRANSISTOR Result Highlights (5)

FIELD-EFFECT TRANSISTOR Datasheets Context Search

MPF102 equivalent transistor

BF511

BF510

AN211A

2N3797

Silicon P-Channel Junction FET sot23

code marking NEC

MP-25

BGY41

MFE5000

MFE4007

MFE3020

Untitled

IRFD311

IRFD110

linear applications of power MOSFET IRF640

mosfet 1RF740

IRFF130

IRF540

IRFP250

IRP623

2N4391

MPF970

IRF221