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    SMC Corporation of America 52-SY5220-FLL20-01N-F2

    VALVE, DBL SOL, BODY PORT, ATEX CAT. 2, SY SERIES | SMC Corporation 52-SY5220-FLL20-01N-F2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 52-SY5220-FLL20-01N-F2 Bulk 5 Weeks 1
    • 1 $632.75
    • 10 $632.75
    • 100 $632.75
    • 1000 $632.75
    • 10000 $632.75
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    FLL200 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL2001B-1 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLL2001B-2 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLL200IB-1 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL200IB-1 Unknown FET Data Book Scan PDF
    FLL200IB-1-E1 Fujitsu FET: P Channel: ID 12 A Original PDF
    FLL200IB-2 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL200IB-2 Unknown FET Data Book Scan PDF
    FLL200IB-2-E1 Fujitsu FET: P Channel: ID 12 A Original PDF
    FLL200IB-3 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL200IB-3-E1 Fujitsu FET: P Channel: ID 12 A Original PDF

    FLL200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLL200IB-3

    Abstract: FLL200 059 906 051 FLL200IB-1 FLL200IB-2
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FLL200 059 906 051 FLL200IB-1 FLL200IB-2

    1200 - 1400 MHz L-Band Applications

    Abstract: No abstract text available
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 1200 - 1400 MHz L-Band Applications

    FLL200IB-1

    Abstract: FLL200IB-2 FLL200IB-3
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 RATING4888 FLL200IB-1 FLL200IB-2

    Untitled

    Abstract: No abstract text available
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200

    FLL200IB-1

    Abstract: FLL200 FLL200IB-2 FLL200IB-3
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200 FLL200IB-2

    FLL200IB-1

    Abstract: FLL200IB-2 FLL200IB-3
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: hadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 FLL200IB-1 FLL200IB-2

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    Untitled

    Abstract: No abstract text available
    Text: FLL200IB-L FLL200IB-2 , FLL200IB-3 L-tìand Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 83.3 w Total Power Dissipation pt


    OCR Scan     		PDF FLL200IB-L FLL200IB-2 FLL200IB-3

    Untitled

    Abstract: No abstract text available
    Text: F|.fjU. FLL200IB-1, FLL200IB-2, FLL200IB-3 J L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 42.5dBm Typ. • High Gain: G 1dB = 13.0dB (Typ.)@1.8 GHz (FLL200IB-1) • High PAE: r iadd = 34% (Typ.) • Proven Reliability • Hermetically Sealed Package


    OCR Scan     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3

    1200 - 1400 MHz, L-Band Applications

    Abstract: fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 FLL200IB-3 et 1109
    Text: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G 1dB = 13.0dB (Typ.)@1 -8GHz (FLL200IB-1) High PAE: riadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package


    OCR Scan     		PDF FLL200IB-1, FLL200IB-2, FLL200IB-3 FLL200IB-1) FLL200IB-3 FCSI0598M200 1200 - 1400 MHz, L-Band Applications fujitsu l-band power fets FLL200 FLL200IB-1 FLL200IB-2 et 1109

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		PDF FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171

    FLL101ME

    Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
    Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)


    OCR Scan     		PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C

    64KX8

    Abstract: AS7C1024 Plastic 32-pin 300 mil SOIC
    Text: AS 7 C 1024 AS 7 C3 1024 llig li Perform ance 128KX8 CMOS SRAM 128KX8 CMOS' SRAM Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s X 8 b its • T T L /L V T T L -c o m p a tib le , th r e e - s ta te I / O • H ig h s p e e d • 3 2 - p i n JEDEC s ta n d a r d p a c k a g e s


    OCR Scan     		PDF 128KX8 AS7C1024 AS7C31Ã 32-pin 7C512 64KX8) 28-pin 40-pin 10x20 64KX8 Plastic 32-pin 300 mil SOIC

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK