10N60C
Abstract: GS54
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET
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10N60C5M
O-220
20070704a9
10N60C
GS54
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10N60C
Abstract: C3525
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET
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10N60C5M
O-220
10N60C
C3525
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET
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10N60C5M
O-220
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10N60C5M
Abstract: kw0649 IGBT GS c16tj 10N60C
Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions
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10N60C5M
O-220
10N60C5M
kw0649
IGBT GS
c16tj
10N60C
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10N60C
Abstract: c16tj 10N60C5M
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20080523c
10N60C
c16tj
10N60C5M
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10N60C
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
10N60C
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20080310b
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10N60C
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
10N60C
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10N60C
Abstract: 10N60C5M
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
10N60C
10N60C5M
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C
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10N60C5
O-220
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions
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10N60C5M
O-220
20090209d
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
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10N60C5
O-220
20080310a
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10N60C
Abstract: No abstract text available
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
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10N60C5
O-220
20090209c
10N60C
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Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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10N60C5
O-220
20090209c
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7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
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7N60B-2X
7N60C-2X
16N60B2-3X
16N60C2-3X
30N60B2-4X
30N60C2-4X
40N60B2-5Y
40N60C2-5Y
60N60B2-7Y
60N60C2-7Y
7N60B equivalent
10n60b
ixgd
28N12
20N120
16N60C2
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10N60W
Abstract: No abstract text available
Text: AP10N60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS 600V RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 0.75 10A S Description AP10N60 series are specially designed as main switching devices for
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AP10N60W
AP10N60
265VAC
10N60W
10N60W
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10N60W
Abstract: AP10N60W MJ10
Text: AP10N60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.75Ω ID G 10A S Description AP10N60 series are specially designed as main switching devices for
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AP10N60W
AP10N60
265VAC
10N60W
10N60W
AP10N60W
MJ10
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high
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10N60K-MT
10N60K-MT
QW-R205-022
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10n60b
Abstract: No abstract text available
Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N60B2D1
10N60B2D1
IC110
O-247
8-06B
405B2
10n60b
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ixgh10n60
Abstract: 10N60AU L1229 10n60au1
Text: ^C25 V v CE sat 20 A 20 A 2.5 V 3.0 V V CES Low V_c. IGBT with Diode CE(sat) High speed IGBT with Diode 600 V IX G A /IX G H 10N60U1 IX G A /IX G H 10N60AU1 600 V Combi Packs P relim in ary data Maximum Ratings Symbol Test Conditions vt c e s Tj = 25°C to 150°C
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IXGH10
N60U1
IXGH10N60AU1
O-263
O-247
10N60U1
10N60AU1
D94006DE,
T0-263
0D0223Ã
ixgh10n60
10N60AU
L1229
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10N60A
Abstract: IGBT 10N60 10N6Q
Text: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s
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IXGH10N60
10N60A
O-263
O-247
10N60
10N60A
10N60U1
10N60AU1
D94006DE,
IGBT 10N60
10N6Q
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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12n60u
Abstract: sta 750 tic 263a
Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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10N60A
Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
150i2
O-247
10N60A
IGBT 10N60
10N60
IXGH10N60A
IXGH10N60
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