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    4310LC-352 Coilcraft Inc Wideband bias choke, RoHS, halogen-free Visit Coilcraft Inc
    4310LC-352KE Coilcraft Inc Wideband bias choke, RoHS, halogen-free Visit Coilcraft Inc
    4310LC-132 Coilcraft Inc Wideband bias choke, RoHS, halogen-free Visit Coilcraft Inc
    4310LC-132KE Coilcraft Inc Wideband bias choke, RoHS, halogen-free Visit Coilcraft Inc
    C440 Coilcraft Inc Designer's Kit, XFL3010/3012 power inductors, RoHS, halogen-free Visit Coilcraft Inc
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    McGill Microwave Systems Ltd LMR-LW600-LOW-SMOKE-ZERO-HALOGEN

    LMR-LW600-LSZH 500' Long (152.4m
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    DigiKey LMR-LW600-LOW-SMOKE-ZERO-HALOGEN 1
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    McGill Microwave Systems Ltd LMR-LW240-LOW-SMOKE-ZERO-HALOGEN

    LMR-LW240-LSZH 500' Long (152.4m
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    DigiKey LMR-LW240-LOW-SMOKE-ZERO-HALOGEN 1
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    Low Voltage Lighting 24V 10W DC HALOGEN LIGHT BULB

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    Bristol Electronics 24V 10W DC HALOGEN LIGHT BULB 7
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    Low Voltage Lighting 12V 10W DC HALOGEN LIGHT BULB

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    Bristol Electronics 12V 10W DC HALOGEN LIGHT BULB 7
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    Low Voltage Lighting 24V 20W DC HALOGEN LIGHT BULB

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    Bristol Electronics 24V 20W DC HALOGEN LIGHT BULB 4
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    HALOGEN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A12 diode

    Abstract: diode 0450
    Text: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free


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    PDF DFN1006) MIL-STD-750, C/10s IEC61000-4-2 IEC61000-4-4 5/50s) 8/20s A12 diode diode 0450

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


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    PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410

    ndf02n60zg

    Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


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    PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG

    Untitled

    Abstract: No abstract text available
    Text: -Electrical Characteristics Data- Halogen-free RoHS Metal Core SMD Power Inductors May-2012 TM MCOIL MDMK2020T4R7MM Size : 2.0 x 2.0 x 1.2mm 0.079 x 0.079 x 0.047 inch Inductance : 4.7 Saturation Current : 1,300 Temp. rise Current : 1,050 DC Resistance : 0.210


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    PDF DataMay-2012 MDMK2020T4R7MM MDMK2020T4R7MM

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFZ48 mosfet driver

    Abstract: No abstract text available
    Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching


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    PDF IRFZ48RS, IRFZ48RL, SiHFZ48RS SiHFZ48RL IRFZ48, SiHFZ48 2002/95/EC O-262) O-263) 2011/65/EU IRFZ48 mosfet driver

    s8058

    Abstract: No abstract text available
    Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance


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    PDF Si7120DN Si7120DN-T1-E3 Si7120DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8058

    MCH3383

    Abstract: No abstract text available
    Text: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in


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    PDF EN9000A MCH3383 PW10s, 900mm2 MCH3383

    SI4431CDY

    Abstract: No abstract text available
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    HPNP-100NC

    Abstract: ferrite drum core
    Text: SMD Power Inductor CDRH2D11/HP Description • Ferrite drum core construction. • Magnetically shielded. • L W H:3.2 3.2 1.2 mm Max. • Product weight: 37mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×


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    PDF CDRH2D11/HP 1500pcs DC-36-3266 2-Aug-12 HPNP-100NC ferrite drum core

    si1922

    Abstract: SI1922EDH
    Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21


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    PDF Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922

    95xxx

    Abstract: si3434 si3495
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


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    PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495

    CDRH5D28RHPNP-2R2NC

    Abstract: CDRH5D28RHPNP CDRH5D28RHPNP-4R7NC T2420 CDRH5D28RHPNP-100M CDRH5D28RHPNP-100MC
    Text: SMD Power Inductor CDRH5D28R/HP Description • Ferrite drum core construction. • Magnetically shielded. • L W H:6.3 6.2 3.0 mm Max. • Product weight: 0.4g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS


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    PDF CDRH5D28R/HP 2000pcs 5-Jun-12 CDRH5D28RHPNP-2R2NC CDRH5D28RHPNP CDRH5D28RHPNP-4R7NC T2420 CDRH5D28RHPNP-100M CDRH5D28RHPNP-100MC

    TO-252AA Mechanical dimensions

    Abstract: VS-50WQ04
    Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition


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    PDF VS-50WQ04FN-M3 2002/95/EC O-252AA) J-STD-020, VS-50WQ04FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. TO-252AA Mechanical dimensions VS-50WQ04

    Untitled

    Abstract: No abstract text available
    Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated


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    PDF Si1034X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A)


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    PDF SQ4940EY AEC-Q101 2002/95/EC SQ4940EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


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    PDF SQS464EEN AEC-Q101 2002/95/EC SQS464EEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SQS404EN-T1-GE3

    Abstract: marking D3 TSOP-6 PPAK1212
    Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    PDF SQS404EN AEC-Q101 2002/95/EC SQS404EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQS404EN-T1-GE3 marking D3 TSOP-6 PPAK1212

    SQ2303ES

    Abstract: marking code 604 SOT23
    Text: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    PDF SQ2303ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2303ES* OT-23 SQ2303ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2303ES marking code 604 SOT23

    EP53F8QI

    Abstract: 12v to 3.7v converter 1,5a EP53
    Text: EP53F8QI 1500 mA Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant; Halogen Free Description Application The EP53F8QI provides high efficiency in a very small footprint. Featuring integrated inductor, the device delivers up to 1500mA of continuous


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    PDF EP53F8QI EP53F8QI 1500mA 40mm2. 12v to 3.7v converter 1,5a EP53

    SQ2318ES

    Abstract: No abstract text available
    Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


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    PDF SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2318ES

    Untitled

    Abstract: No abstract text available
    Text: SUP90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 Qg (Typ.) 87 TO-220AB Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SUP90N04-3m3P 2002/95/EC O-220AB SUP90N04-3m3P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MAR 826

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


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    PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 826