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    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Search Results

    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    HARRIS SEMICONDUCTOR TO220 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN9409

    Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
    Text: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow


    Original     		AN9409 1-800-4-HARRIS AN9409 transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bSE » • 43D5271 DDMflbb? 543 H H A S H H A R R IS SEMICONDUCTOR P R ELIM IN A R Y Features 1 M The HIP1031 is a High Side Driver Power Integrated Circuit designed to switch power supply voltage to an output load. It is the equivalent of a P N P pass transistor operated as a


    OCR Scan     		HIP1031 1-800-4-HARRIS PDF

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic PDF

    CD4016BEX

    Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
    Text: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		BR-027 82CXXX CD4016BEX MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE PDF

    Untitled

    Abstract: No abstract text available
    Text: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V


    OCR Scan     		43G2E71 HGTB12N60D1C TS-001AA O-220) 100ns 60jia ICL7667 PDF

    HRF3205L

    Abstract: mosfet HRF3205
    Text: HRF3205, HRF3205L, HRF3205S S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 100A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS HRF3205L mosfet HRF3205 PDF

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


    OCR Scan     		M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c PDF

    AN9321

    Abstract: S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055
    Text: Harris Semiconductor No. AN9512 Harris Power MOSFETs September 1995 Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Authors: Stan Benczkowski and Wallace Williams Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid


    Original     		AN9512 1-800-4-HARRIS AN9321 S 170 MOSFET TRANSISTOR transistor rfp50n06 relay 24v 30a rfp50n06 substitute RFP70N06 harris mosfet catalog DIODE DATABOOK RFP22N10 RFP3055 PDF

    TA17404

    Abstract: AN7254 RFM4N35 RFM4N40 RFP4N35 RFP4N40 TB334
    Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs [[ /Title /Title These are N-channel enhancement-mode silicon-gate RFM4N ( power field effect transistors designed for applications such 35,


    Original     		RFM4N35, RFM4N40, RFP4N35, RFP4N40 TA17404. RFM4N35 O-204AA AN7254 AN7260. TA17404 RFM4N35 RFM4N40 RFP4N35 RFP4N40 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor October 1998 Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		RFM4N35, RFM4N40, RFP4N35, RFP4N40 TB334 TA17404. AN7254 AN7260. PDF

    IGPT CIRCUIT

    Abstract: HIP5600 HARRIS TO-220 400V to 6V DC Regulator TO 220 Package FUSE 1A 250V T zener diode configuration HIP5600 HIP5600IS2 V275LA10B HIP5600IS MO-169
    Text: HIP5600 S E M I C O N D U C T O R Thermally Protected High Voltage Linear Regulator January 1996 Features Description • • • • • • • • The HIP5600 is an adjustable 3-terminal positive linear voltage regulator capable of operating up to either


    Original     		HIP5600 HIP5600 400VDC 280VRMS. 50VDC 400VDC 50VRMS 280VRMS 1-800-4-HARRIS IGPT CIRCUIT HIP5600 HARRIS TO-220 400V to 6V DC Regulator TO 220 Package FUSE 1A 250V T zener diode configuration HIP5600IS2 V275LA10B HIP5600IS MO-169 PDF

    TA17424

    Abstract: AN7254 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334
    Text: RFM7N35, RFM7N40, RFP7N35, RFP7N40 Semiconductor 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A, 350V and 400V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		RFM7N35, RFM7N40, RFP7N35, RFP7N40 TA17424. AN7254 AN7260. TA17424 AN7260 RFM7N35 RFM7N40 RFP7N35 RFP7N40 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model


    OCR Scan     		RFD14N06, RFD14N06SM, RFP14N06 T0-220AB 100i2 O-251AA 1-800-4-HARRIS PDF

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10 PDF

    MAC202

    Abstract: led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC
    Text: INDEX Order Code Description Manufacturer Page Number ADC12130CIN Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converter with MUX and Sample/Hold LM2587 Series Simple Switcher 5A Flyback Regulator LM2594N50 Simple Switcher® Power Converter LM50CIM3


    Original     		ADC12130CIN 12-Bit LM2587 LM2594N50 LM50CIM3 LM6171BIN LP2980IM5-50 CA3338E HFA1103IP HIP4080AIP MAC202 led matrix 5x7 coding HIP4080AIP MAC-202 Si9120DJ XR215CP irf60 schematic diagram of laptop inverter schematic diagram dc-ac welding inverter CIRCUIT laptop LCD inverter SCHEMATIC PDF

    7n10le

    Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
    Text: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected


    Original     		RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 1-800-4-HARRIS 7n10le AN7254 AN7260 RFD7N10LE pspice model for ttl TC247 PDF

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA PDF

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


    OCR Scan     		HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V PDF

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 PDF

    TA17425

    Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
    Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,


    Original     		O204AA, O220AB) RFM6N45, RFP6N45, RFP6N50 AN7254 AN7260 TA17425 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor PDF

    Untitled

    Abstract: No abstract text available
    Text: H A F R F R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM IS s e m i c o n d u c t o r 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    OCR Scan     		RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS PDF

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


    Original     		RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE PDF

    RF1S42N03

    Abstract: F1S42N
    Text: RFP42N03, RF1S42N03, RF1S42N03SM S E M I C O N D U C T O R 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A, 30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET


    Original     		RFP42N03, RF1S42N03, RF1S42N03SM RF1S42N03 RF1S42N03SM TA49235. 1-800-4-HARRIS F1S42N PDF

    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


    Original     		RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L PDF