HY5118160
Abstract: HY5118160BTC HY5118160B
Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY5118160B
HY5116160B
1Mx16,
16-bit
1Mx16
HY5118160
HY5118160BTC
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HY5118164B
Abstract: HY5118164BJC HY5116164B
Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Original
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HY5118164B
HY5116164B
1Mx16,
16-bit
1Mx16
HY5118164BJC
HY5116164B
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for
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OCR Scan
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HYM581600
HY5116100
22/xF
HYM581600M/LM/TM/LTM
891MAX
HYM581600TM/LTM
25IMAX.
1BD01-01-FEB94
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for
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OCR Scan
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HYM581600
HY5116100
HYM581600M/LM/TM/LTM
HYM581600TM/LTM
1BD01-00-MAY93
HYM581600M
HYM581600LM
HYM581600TM
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51161
HY5116100Ato
9-10-MAY94
HY5116100A
HY5116100AJ
HY5116100ASU
HY5116100AT
HY51161OOASLT
HY5116100AR
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight HY5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.
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OCR Scan
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HYM564200
64-bit
HY5116160
16-bit
HYM564200XG/SLXG
A0-A11
RAS0-RA53)
DQ0-DQ63)
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PDF
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rau2
Abstract: 1A011
Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116160
16-bit
16-bit.
Y5116160
1AD11-10-MAY95
HY5116160JC
HY5116160SLJC
rau2
1A011
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HY5116100
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5116100
1AD01-10-APR93
HY5116100JC
HY5116100LJC
HY5116100TC
HY5116100LTC
HY5116100RC
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Untitled
Abstract: No abstract text available
Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF
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HYM5361600A
16Mx36
16Mx1
361600A
16Mx36-bit
HY5116100B
HYM5361600AM/ATM
HYM5361600AMG/ATMG
72-Pin
256ms
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HY5118160
Abstract: HY5118160C
Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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OCR Scan
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HY5118160C
HY5116160C
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
HY5118160
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 6 1 0 0 A S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116100Ais
HY5116100A
HY5116100Ato
1AD19
HY5116100AJ
HY5116100ASU
HY5116100AT
HY5116100ASLT
HY5116100AR
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A8303
Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells
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OCR Scan
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HY5118164B
HY51161646
HY5118164BJC
HY5118164BSLJC
HY5118164BTC
HY5118164BSLTC
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
HY5116164BSLTC
A8303
5118164B
marking da
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HY5118160BTC
Abstract: hy5118160b
Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high
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OCR Scan
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HY5118160B,
HY5116160B
16bit
HY5118160BJC
HY5118160BSLJC
HY5118160BTC
HY5118160BSLTC
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
hy5118160b
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ABO-20 L
Abstract: 1mx1 DRAM
Text: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY5116100
1AD01-10-MAY94
0005AB7
HY5116100JC
HY5116100LJC
HY5116100TC
ABO-20 L
1mx1 DRAM
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Untitled
Abstract: No abstract text available
Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for
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OCR Scan
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HYM591600
HY5116100
HYM591600M/LM/TM/LTM
HYM591600M/LM
1-781MIN.
HYM591600TM/LTM
0-05f1
76MIN.
03IMIN.
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116160
16-bit
16-bit.
HY5116160
1AD11-10-MAY94
HY5116160JC
HY5116160SLJC
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PDF
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116164B
16-bit.
HY5116164B
1ADS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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OCR Scan
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HYM591600
HY5116100
HYM591600M/LM/TM/LTM
HYM591600M/LM
HYM591600TM/LTM
1BD03-00-MAY93
HYM591600M
HYM591600LM
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for
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OCR Scan
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HYM581600
HY5116100
HYM581600M/LM/TM/LTM
1BD01-00-MAY93
HYM58160
HYM581600TM/LTM
251MAX
01-00-M
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wj da11 pin
Abstract: 22TCW
Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5116160B
16-bit.
1AD53-10-MAY95
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
wj da11 pin
22TCW
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM564100 X-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564100 is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY5116160 in 42/42pin SOJ, two 16-bit and one 4-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22p.F
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OCR Scan
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HYM564100
64-bit
HY5116160
42/42pin
16-bit
HYM564100XG/SLXG
A0-A11
DQ0-DQ63)
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PDF
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HY5116100B
Abstract: 10k52 1AD41-00-MAY95 1AD41
Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116100B
Y5116100B
5116100B
1AD41-00-MAY95
HY5116100BJ
HY5116100BSLJ
HY5116100BT
HY5116100BSLT
10k52
1AD41-00-MAY95
1AD41
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PDF
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HY5116164B
Abstract: HY5116164BJC wx19
Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116164B
16-bit
16-bit.
1AOS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
wx19
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PDF
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