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    97C54

    Abstract: siemens gms90c52
    Text: HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C3X GMS90C5X GMS97C5X User’s Manual Ver. 3.1a  MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1a Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.


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    PDF GMS90C3X GMS90C5X GMS97C5X 44PLCC GMS90 44MQFP 97C54 siemens gms90c52

    LG TCON

    Abstract: 2a8h t-con lg
    Text: 32K Flash Embedded 8-Bit MCU GMS99C58 DATA SHEET April. 2000 Ver 1.02 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industries Co., Ltd. GMS99C58 HYUNDAI CONTENTS - 1.Overview . 1


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    PDF GMS99C58 40-PDIP PLCC-44/Pin PDIP-40/Pin MQFP-44/Pin LG TCON 2a8h t-con lg

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI MICRO ELECTRONICS MULTI-FORMAT DIGIATL AUDIO DECODERS HMS30C1100/1200 DataSheet Ver. 1.0 +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Revision History Ver. 1.0 (this manual) Nov. 25, 2000 Version 1.0 Published by


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    PDF HMS30C1100/1200 64TQFP

    97C54

    Abstract: 97C52 97c51 hyundai GMS97X56 gms90c52 interfacing 8051 with 32k byte eprom and 4k byte
    Text: DEC. 1998 Ver. 3.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90 Series DATA SHEET +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 3.1 Published by MCU Application Team 1999 HYUNDAI MicroElectronics All right reserved.


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    PDF GMS90 97C54 97C52 97c51 hyundai GMS97X56 gms90c52 interfacing 8051 with 32k byte eprom and 4k byte

    CMA31

    Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
    Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.01 Author Doowon Choi IT Application Team System IC SBU Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date


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    PDF H1A424M167 HV7121X) CMA31 Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167

    hyundai

    Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
    Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.0 Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date Comments 0.45 April 28, 1999 Draft 0.9 June 15, 1999


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    PDF H1A424M167 HV7121X) hyundai CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR

    90C52

    Abstract: hyundai 80c32 pl50 datasheet GMS90C320 80c32 24Mhz plcc44 200ua1
    Text: OCT. 1999 Ver. 1.1 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS90C320 User’s Manual +<81'$, MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.1 Published by MCU Application Team 1999 HYUNDAI Micro Electronics Co., Ltd. All right reserved.


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    PDF GMS90C320 P-DIP-40 40DIP P-MQFP-44 90C52 hyundai 80c32 pl50 datasheet GMS90C320 80c32 24Mhz plcc44 200ua1

    dn729

    Abstract: P2254 P22154 P22264 P22328 P2252
    Text: RELIABILITY MONITOR DS1210S JAN '98 MONITOR-HYUNDAI DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1210 C1 9750 DN738347AAA 16 PIN SOIC HYUNDAI-KOREA HEI PROCESS Single Poly, Single Metal 3.0 µm POCL3 reFlow (3um only); FLASH E2PROM (all other tech. numbers)


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    PDF DS1210S DS1210 DN738347AAA P21776 P22233 P22310 P22312 P22230 P22309 P22311 dn729 P2254 P22154 P22264 P22328 P2252

    OSD 9616

    Abstract: SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram
    Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual  MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr  2000 HYUNDAI Micro Electronics All right reserved.


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    PDF GMS87C4060 GMS81C4040 OSD 9616 SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram

    SERVICE MANUAL tv hyundai

    Abstract: OSD 9616 1207H
    Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual  MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr  2000 HYUNDAI Micro Electronics All right reserved.


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    PDF GMS87C4060 GMS81C4040 SERVICE MANUAL tv hyundai OSD 9616 1207H

    SERVICE MANUAL tv hyundai

    Abstract: television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom
    Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual  MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team bjlim@hmec.co.kr conner@hmec.co.kr  2000 HYUNDAI Micro Electronics All right reserved.


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    PDF GMS87C4060 GMS81C4040 SERVICE MANUAL tv hyundai television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom

    HY53C256

    Abstract: HY53C256LS
    Text: HYUNDAI HY53C256 Series 256Kx1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C256 256Kx1-bit 300mil 16pin 330mil 18pin standbY556) HY53C256LS

    Untitled

    Abstract: No abstract text available
    Text: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast


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    PDF HY51C1000 M131202B-APR91 HY51C1000 576X1

    Ck37

    Abstract: CSFR 40
    Text: • HYUNDAI HY51V4100B Series 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s C M OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V4100B 304x1-bit. 1AC10-10-MAY95 HY51V4100BJ HY51V4100BLJ HY51V41008SLJ Ck37 CSFR 40

    HY53C256LS

    Abstract: HY53C256S-70 HY53C256 HY53C256LF HY53C256LS70
    Text: HYUNDAI HY53C256 Series 256KX 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C256 300mil 16pin 330mil 18pin 300BSC 1AA01-20-MAY94 HY53C256LS HY53C256S-70 HY53C256LF HY53C256LS70

    MAY94

    Abstract: vve.3 HY53C256 A08H
    Text: HY53C256 Series HYUNDAI 256K x1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C256 300mtl 16pin 330mil 18pin 300BSC 1AA01-20-MAY84 MAY94 vve.3 A08H

    IC TX-2-c

    Abstract: Y51480 5LCAC
    Text: HY514800B Series HYUNDAI 512KX 8-blt CMOS DRAM PRELIMINARY DESCRIPTION The HY5148006 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY514800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY514800B 512KX HY5148006 1AC17-00-MAY94 HY514800BJC HY514800BLJC HY514800BSUC IC TX-2-c Y51480 5LCAC

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


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    PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna­ mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit


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    PDF HY514400 M1A1200A-MAY91 HY514400 HY514400. 512KX8

    HY5116400

    Abstract: I3101A Hyundai Semiconductor dram
    Text: HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY5116400 Schottk160) 2-10-A HY5116400JC HY5116400LJC HY5116400TC I3101A Hyundai Semiconductor dram

    hy6264

    Abstract: No abstract text available
    Text: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY6264A-I 1DB02-11-MAY95 100IP9C) OS3003 330mil 4b750flfl hy6264

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    HY51C4256

    Abstract: block diagram of vu meter HY51C4254-10
    Text: M• ■ HY51C4256 R Hyundai SEMICONDUCTOR A M151201BAPR91 DESCRIPTION FEATURES The HY51C4256 is a high speed, low power 262,144 X 4 CM OS dynamic random access memory. Fabricated with HYUNDAI CMOS technology, HY51C4256 offers a fast page m ode for high data bandw idth, fast usable


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    PDF HY51C4256 256KX4-Bit M151201Bâ APR91 S1C4256 block diagram of vu meter HY51C4254-10