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    IRF330 Price and Stock

    Rochester Electronics LLC AUIRF3305

    MOSFET N-CH 55V 140A TO220AB
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    Infineon Technologies AG IRF3305

    MOSFET N-CH 55V 75A TO220AB
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    Infineon Technologies AG AUIRF3305

    MOSFET N-CH 55V 140A TO220
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    Rochester Electronics AUIRF3305 6,969 1
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    Infineon Technologies AG IRF3305PBF

    MOSFET N-CH 55V 75A TO220AB
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    Vicor Corporation VI-RF330-CYYY

    AC/DC CONVERTER 2X24V 5V 50W
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    IRF330 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF330 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF330 International Rectifier HEXFET TRANSISTORS 400V, N-CHANNEL 1.00 ? 5.5A Original PDF
    IRF330 Intersil 5.5A, 400V, 1.000 ?, N-Channel Power MOSFET Original PDF
    IRF330 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350 V/400V Scan PDF
    IRF330 FCI POWER MOSFETs Scan PDF
    IRF330 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF330 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF330 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    IRF330 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF330 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF330 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF330 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF330 Motorola Switchmode Datasheet Scan PDF
    IRF330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF330 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF330 Unknown FET Data Book Scan PDF
    IRF330 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    IRF330 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF330 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF330 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF330

    Abstract: TA17414 TB334 204AA
    Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF330 TA17414. IRF330 TA17414 TB334 204AA

    mosfet to3

    Abstract: irf33 2N6760 IRF330 LE17
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


    Original     		PDF IRF330 2N6760 O-204AA) mosfet to3 irf33 2N6760 LE17

    irf332

    Abstract: irf330 harris
    Text: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF330, IRF331, IRF332, IRF333 TA17414. irf332 irf330 harris

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


    Original     		PDF IRF330 2N6760 O-204AA)

    IRF330

    Abstract: JANTX2N6760 JANTXV2N6760
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


    Original     		PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF330 JANTX2N6760 JANTXV2N6760

    IRF 930

    Abstract: IRF3305
    Text: PD - 95758A IRF3305PbF Features l Designed to support Linear Gate Drive Applications l 175°C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D


    Original     		PDF 5758A IRF3305PbF 45C/W" O-220AB O-220AB IRF 930 IRF3305

    IRF 930

    Abstract: IRF3305
    Text: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET


    Original     		PDF IRF3305 45C/W IRF3305 O-220AB O-220AB IRF 930

    Untitled

    Abstract: No abstract text available
    Text: PD - 95758A IRF3305PbF Features l Designed to support Linear Gate Drive Applications l 175°C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D


    Original     		PDF 5758A IRF3305PbF 45C/W" O-220AB O-220AB

    IRF3305

    Abstract: No abstract text available
    Text: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET


    Original     		PDF IRF3305 45C/W IRF3305 O-220AB O-220AB

    IRF3305

    Abstract: irf3305pbf
    Text: PD - 95758 AUTOMOTIVE MOSFET IRF3305PbF Features O O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free HEXFET Power MOSFET


    Original     		PDF IRF3305PbF 45C/W IRF3305 O-220AB irf3305pbf

    Untitled

    Abstract: No abstract text available
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


    Original     		PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    Untitled

    Abstract: No abstract text available
    Text: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features n n n n n HEXFET Power MOSFET Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated


    Original     		PDF IRF3305 45C/W IRF3305 O-220AB

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    IRF331R

    Abstract: IRF330R ic l00a 250M IRF332R IRF333R
    Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M

    WO2M

    Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
    Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801

    IRF330

    Abstract: IRF331 IRF332 IRF333 331z
    Text: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure


    OCR Scan     		PDF 0DDS114 IRF330/331Z332/333 IRF330 IRF331 IRF332 IRF333 331z

    lem 732 733

    Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331


    OCR Scan     		PDF IRF330-333/IRF730-733 MTM/MTP5N35/5N40 T-39-11 O-22QAB IRF730 IRF731 IRF732 IRF733 MTP5N35 MTP5N40 lem 732 733 lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731

    Untitled

    Abstract: No abstract text available
    Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF330, IRF331y IRF332, IRF333 beRF333

    IRF331

    Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333

    Untitled

    Abstract: No abstract text available
    Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)


    OCR Scan     		PDF IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760

    irf332

    Abstract: IRF331 IRF3302
    Text: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package


    OCR Scan     		PDF S5M52 T-39-11 IRF330 IRF331 IRF332 IRF333 O-204 G-119 IRF330, IRF331, IRF3302

    Untitled

    Abstract: No abstract text available
    Text: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 43CI2271 F330/331/332/333 IRF330R/331R/332R/333R IRF330, IRF331, IRF332, IRF333 IRF330R, IRF331R, IRF332R,

    ED 83

    Abstract: No abstract text available
    Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)


    OCR Scan     		PDF IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 ED 83