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    IXFN100 Search Results

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    IXFN100 Price and Stock

    Littelfuse Inc IXFN100N65X2

    MOSFET N-CH 650V 78A SOT227B
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    DigiKey IXFN100N65X2 Tube 298 1
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    Newark IXFN100N65X2 Bulk 300
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    Quest Components IXFN100N65X2 400
    • 1 $49.612
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    CoreStaff Co Ltd IXFN100N65X2 500
    • 1 $30.218
    • 10 $24.806
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    Littelfuse Inc IXFN100N50P

    MOSFET N-CH 500V 90A SOT-227B
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    DigiKey IXFN100N50P Tube 151 1
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    RS IXFN100N50P Bulk 8 Weeks 10
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    Littelfuse Inc IXFN100N50Q3

    MOSFET N-CH 500V 82A SOT227B
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    DigiKey IXFN100N50Q3 Tube 3 300
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    IXYS Corporation IXFN100N20

    MOSFET N-CH 200V 100A SOT-227B
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    IXYS Corporation IXFN100N25

    MOSFET N-CH 250V 100A SOT-227B
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    DigiKey IXFN100N25 Tube 10
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    IXFN100 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN100N10 IXYS HIPERFET Power MOSFTETs Scan PDF
    IXFN100N10 Sharp 100 V, 100 A, HIPerFET power MOSFET Scan PDF
    IXFN100N10S1 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N10S2 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N10S3 IXYS 100V HiPerFET power MOSFET with schottky diodes Original PDF
    IXFN100N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFN100N25 IXYS 250V HiPerFET power MOSFET Original PDF
    IXFN100N50P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 90A SOT-227B Original PDF
    IXFN100N50Q3 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 82A SOT-227 Original PDF
    IXFN100N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF

    IXFN100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFN100N50Q3 RDS on trr = = ≤ ≤ 500V 82A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    IXFN100N50Q3 250ns E153432 100N50Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN100N10 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)100 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


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    IXFN100N10 PDF

    IXFN100N50Q3

    Abstract: ixfn100n50 100n50
    Text: Advance Technical Information IXFN100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 82A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    IXFN100N50Q3 250ns E153432 100N50Q3 IXFN100N50Q3 ixfn100n50 100n50 PDF

    IRM-38

    Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings


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    O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original
    IXDD404 1800pF IXDD404 2N3904 DD404 IXDD404PI IXDD404SI-CT IXDD404SIA IXDD404SI-16CT PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    dd404

    Abstract: 2N7000 MOSFET IXDD404SI cmos 4000 CMOS 4000 series IXDD IXDD404PI IXDD404 IXDD404SI-16 IXDD404SIA
    Text: IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original
    IXDD404 1800pF IXDD404 2N3904 DD404 IXDD404PI IXDD404SI-CT IXDD404SIA IXDD404SI-16CT dd404 2N7000 MOSFET IXDD404SI cmos 4000 CMOS 4000 series IXDD IXDD404PI IXDD404SI-16 IXDD404SIA PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    lm339 ic data

    Abstract: IXDD504D2
    Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps


    Original
    IXDD504/ IXDE504 1800pF IXDD504 IXDE504 Edisonstrasse15 D-68623; lm339 ic data IXDD504D2 PDF

    IXDD504D2

    Abstract: No abstract text available
    Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps


    Original
    IXDD504/ IXDE504 1800pF IXDD504 IXDE504 Edisonstrasse15 D-68623; IXDD504D2 PDF

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original
    IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original
    RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    30V 20A 10KHz power MOSFET

    Abstract: IXDD504 IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504 IXDE504PI IXDE504SIA IXDD504SI
    Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps


    Original
    IXDD504/ IXDE504 1800pF IXDD504 IXDE504 Edisonstrasse15 D-68623; 30V 20A 10KHz power MOSFET IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504PI IXDE504SIA IXDD504SI PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original
    BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    2N7000 MOSFET

    Abstract: dc motor for 24v
    Text: IXDD404 4 Ampere Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original
    IXDD404 1800pF IXDD404 2N3904 DD404 IXDD404PI IXDD404SI-CT IXDD404SIA IXDD404SI-16CT 2N7000 MOSFET dc motor for 24v PDF

    IXDD

    Abstract: IXDD404PI IXDD404 IXDD404SI IXDD404SI-16 IXDD404SIA IXDD404SIA-16 SOIC-16 dual flip flop 8-pin resistor 4700 ohm
    Text: IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original
    IXDD404 1800pF IXDD404 2N3904 DD404 IXDD404PI IXDD404SI-CT IXDD404SIA IXDD404SI-16CT IXDD IXDD404PI IXDD404SI IXDD404SI-16 IXDD404SIA IXDD404SIA-16 SOIC-16 dual flip flop 8-pin resistor 4700 ohm PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original
    O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    lm339 igbt driver

    Abstract: low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION 404si fully protected p channel mosfet 404SI-16 IXDD404PI IXDD404
    Text: IXDD404PI / 404SI / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 25V


    Original
    IXDD404PI 404SI 404SI-16 1800pF IXDD404 Edisonstrasse15 D-68623; lm339 igbt driver low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION fully protected p channel mosfet 404SI-16 PDF

    TO-238

    Abstract: sn 8400
    Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_


    OCR Scan
    1300C IXFN100N10 O-238 O-238 TO-238 sn 8400 PDF

    TO-238

    Abstract: vdo 007 dss100v IXFN100N10 HiperFET 013Q
    Text: X X 1ÖE D Y S CORP 4fc>öb22fc. G O G G b a S S □IXYS ADVANCE TECHNICAL DATA SHEET* December 1988 DATA SHEET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, HDMOS™ Family FEATURES:_ 100A


    OCR Scan
    b22fc. 1300C O-238 -40to IXFN100N10 O-238 TO-238 vdo 007 dss100v IXFN100N10 HiperFET 013Q PDF

    100N20

    Abstract: t 227 fk90 ax2002 t227 106N20 IXFK90N20
    Text: p V DSS HiPerFET Power MOSFETs ix f k 90 n 20 IXFN100 N 20 IXFN106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 200 V 90 A 100 A 200 V 200 V 106 A trr < 200 ns DS on 23 mû 23 mQ 20 m£2 TO -264 A A (IXFK) Sym bol Test C onditions


    OCR Scan
    IXFN100 IXFN106N20 90N20 100N20 106N20 T-227 90N20 IXFN100N20 106N20 t 227 fk90 ax2002 t227 IXFK90N20 PDF

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


    OCR Scan
    0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 PDF

    6 r 360

    Abstract: 106N20 100n20 IXFK90N20
    Text: HHXYS VDSS HiPerFET Power MOSFETs IXFK 90N20 IXFN 100N20 IXFN 106N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 200 V 200 V 200 V p ^D25 DS on 90 A 23 mQ 100 A 23 mQ 106 A 20 mß t„ ^200 ns TO-264 AA (IXFK) Symbol Test Conditions


    OCR Scan
    IXFK90N20 IXFN100N20 IXFN106N20 O-264 90N20 100N20 106N20 Cto150 50Drain 6 r 360 PDF