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    J31 TRANSISTOR Search Results

    J31 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    J31 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J32C

    Abstract: J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c MJD32 J31C MARKING
    Text: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1


    Original     		PDF MJD31 MJD31C MJD32 MJD32C O-252 MJD32 J32C J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c J31C MARKING

    Untitled

    Abstract: No abstract text available
    Text: bbS3*J31 0015515 “=! ObE D N AMER PHILIPS/DISCRETE BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 variant, especially suitable for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.


    OCR Scan     		PDF BC846 BC847 BC848 OT-23

    Untitled

    Abstract: No abstract text available
    Text: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications


    OCR Scan     		PDF BCX19 BCX20 OT-23 BCX17and BCX18 0D54b04

    BUK456

    Abstract: C055 T0220AB 7ts transistor
    Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 003Qb6S BUK456-200A/B T0220AB BUK456 -200A -200B C055 7ts transistor

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E » • bb53*J31 0030363 bS3 Philips Components BGY113A/113B Datasheet status P r e lim in a r y s p e c ific a tio n date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in


    OCR Scan     		PDF BGY113A/113B OT288D 00302fl5 OT288D.

    ferrite beat

    Abstract: ferrite 4312 Scans-004952 MLAP GG267
    Text: N AMER PHILIPS/DISCRETE b 'ìE bb53=J31 0 Q 2 6 7 6 S D G 7T * A P X BLT93/SL A UHF POWER TRANSISTOR NPN silicon planar epitaxial tran sisto r p rim a rily intended fo r use in hand-held radio stations in the 90 0 M Hz co m m u n ica tio n s band. T his device has been designed sp e cifica lly fo r class-B operation.


    OCR Scan     		PDF GG267Ã BLT93/SL OT122D) ferrite beat ferrite 4312 Scans-004952 MLAP GG267

    J334 transistor

    Abstract: j327 j350 1t4t transistor j349 transistor J333 j327 transistor j350 TRANSISTOR transistor j326 j329
    Text: Flat Panel Interlace Examples Flat Panel Interface Examples This section includes schematic examples showing how to connect the 65525 to various flat panel displays. Monochrome Panels 1 2) 3) 4) 5) Mfr Part Number Epson Citizen Sharp Sanyo Hitachi EG-9005F-LS


    OCR Scan     		PDF EG-9005F-LS G6481L-FF LM64P80 LCM-6494-24NAC LMG5162XUFC LJ64ZU50 640x480 J334 transistor j327 j350 1t4t transistor j349 transistor J333 j327 transistor j350 TRANSISTOR transistor j326 j329

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER PHILIPS/DISCRETE bbSS^l ODlM^a? S • LBE2005Q LCE2005Q MAINTENANCE TYPE for new design use LBE/LCE2003S J T - S i r 05" MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LBE2005Q LCE2005Q LBE/LCE2003S)

    LBE2005Q

    Abstract: LCE2005Q J31 transistor
    Text: N AMER PHILIPS/DISCRETE ObE D • 1^53=131 □DIM'IS? S ■ M A IN T E N A N C E TYPE LBE2005Q LCE2005Q I for new design use LBE/LCE2003S T-32r05" . MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LBE/LCE2003S) LBE2005Q LCE2005Q LCE2005Q J31 transistor

    Untitled

    Abstract: No abstract text available
    Text: £=J S G S -T H O M S O N A T /. M»i[LBCT@l[] S_MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • RUGGEDIZED VSWR 20:1 . INTERNAL INPUT/OUTPUT MATCHING B LOW THERMAL RESISTANCE . METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81350M MSC81350M 7T2T237 JH3214F

    BQX54

    Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
    Text: • bhS3^31 0024tD'ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


    OCR Scan     		PDF G024tD" BCX54 BCX55 BCX56 BCX51, BCX52 BCX53 BCX55 BQX54 BCX56 BCX54 71A marking BCX51 BCX54-10 BCX54-16

    L7E transistor

    Abstract: BF820 BF821 BF822 BF823
    Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 D0555Qb MTD H A P X N AUER PHILIPS/DISCRETE BSP120 b7E » N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		PDF bb53T31 D0555Qb BSP120 OT223

    Untitled

    Abstract: No abstract text available
    Text: • bbS3c13]i QQ245bl 4Tb H A P X N AUER PH ILIPS/DISCR ETE BCW29 BCW30 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF QQ245bl BCW29 BCW30 bb53131 00545b4

    Untitled

    Abstract: No abstract text available
    Text: BSP126 JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SO T223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF BSP126

    BDT95

    Abstract: No abstract text available
    Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. DBDT93 BDT95

    TIP-33

    Abstract: T1P33 TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C
    Text: Jv TIP33; A; B; C _ SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are


    OCR Scan     		PDF TIP33; OT-93 TIP34, TIP34A, TIP34B TIP34C. TIP33 bbS3131 TIP-33 T1P33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34C

    sot440

    Abstract: MLC092
    Text: Philips Semiconductors Product specification . NPN microwave power transistors FEATURES PTB32001X; PTB32003X; ’ _ ’ PTB32005X PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF OT440A PTB32001X; PTB32003X; rTB32005X PTB32003X. PTB32005X sot440 MLC092

    Untitled

    Abstract: No abstract text available
    Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PDF 001S1DS bhS3T31 PTB32001X PTB32003X PTB32005X PTB32001X. r-33-07

    Untitled

    Abstract: No abstract text available
    Text: • bbSBTBl 00E4S43 460 ■ A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B: 61C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.


    OCR Scan     		PDF 00E4S43 BCV61; BCV61B: OT-143 BCV62. BCV61B BCV61A BCV61B; BCV61

    907 TRANSISTOR smd

    Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
    Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in


    OCR Scan     		PDF BFQ149 MSB013 907 TRANSISTOR smd smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526

    Untitled

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BO940F BD942F S0T186 BD933F, BD935F, BD937F, BD939F

    bd679

    Abstract: No abstract text available
    Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA


    OCR Scan     		PDF BD675; BD679; OT-32 BD676, BD678, BD680, BD682 BD684. BD675 bd679

    D434

    Abstract: BD43b 440 transistors
    Text: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n Silicon epitaxial-base transistors DESCRIPTION QUICK REFERENCE DATA PNP transistors in a TO-126 SOT32 plastic envelope, intended for use in complementary output stages of audio amplifiers up to


    OCR Scan     		PDF O-126 BD433, BD435, BD437, BD439 BD441 BD434/436/438/440/442 BD434 BD436 D434 BD43b 440 transistors