TMS320C30 Evaluation Module
Abstract: SPRU035 TMS320C32 RX 150 batch counter W063 SPRA021
Text: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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TMS320C3x/C4x
SPRU034H
June1998
Index-13
Index-14
TMS320C30 Evaluation Module
SPRU035
TMS320C32
RX 150 batch counter
W063
SPRA021
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
MIL-STD-833,
SCBA010
SCBA011
SCEA005
SCAA029,
SZZU001B,
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
MIL-STD-833,
SCET004,
SCAU001A,
59629762601Q3A
59629762601QLA
59629762601QKA
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P3100SB
Abstract: CYG20XX CYG2217 CYG2911 teccor sidactor 600-150
Text: APPLICATION NOTE AN-124 FCC “B” Surge Requirements AN-124 Meeting the new FCC ‘B’ surge requirements with the CYG20XX/CYG2911 series DAA modules. Introduction Starting in June1998 the FCC, under the Code off Federal Regulations CFR 47 part 68 had adopted a
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AN-124
CYG20XX/CYG2911
June1998
CYG20XX
CYG2911
AN-124-R1
P3100SB
CYG2217
teccor sidactor
600-150
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CL30
Abstract: Architecture of TMS320C4X FLOATING POINT PROCESSOR SPRA021 SPRU035 TMS320C32 tartan library HEX30
Text: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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TMS320C3x/C4x
SPRU034H
June1998
Index-13
CL30
Architecture of TMS320C4X FLOATING POINT PROCESSOR
SPRA021
SPRU035
TMS320C32
tartan library
HEX30
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
MIL-STD-833,
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
MIL-STD-833,
SN74LVC646ADBLE
SN74LVC646ADBR
SN74LVC646ADW
SN74LVC646ADWR
SN74LVC646APWLE
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TMS320C3X
Abstract: MYSTERY MR 2.75 sprt125 Architecture of TMS320C4X FLOATING POINT PROCESSOR INSTRUCTION SET of TMS320C4X SPRA021 SPRU035 TMS320C32 TMS320C3X/C4X
Text: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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TMS320C3x/C4x
SPRU034H
June1998
Index-13
TMS320C3X
MYSTERY MR 2.75
sprt125
Architecture of TMS320C4X FLOATING POINT PROCESSOR
INSTRUCTION SET of TMS320C4X
SPRA021
SPRU035
TMS320C32
TMS320C3X/C4X
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rts30g
Abstract: TMS320C40 cregister dsp SPRA021 TMS320C3X SPRU035 TMS320C32 SPRU034H TOWARD AC30
Text: TMS320C3x/C4x Optimizing C Compiler User’s Guide Literature Number: SPRU034H June1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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TMS320C3x/C4x
SPRU034H
June1998
Index-13
rts30g
TMS320C40
cregister dsp
SPRA021
TMS320C3X
SPRU035
TMS320C32
SPRU034H
TOWARD AC30
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LVC646A
Abstract: SN54LVC646A SN74LVC646A
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
SN54LVC646A
SN74LVC646A
LVC646A
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Untitled
Abstract: No abstract text available
Text: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302G – JANUARY 1993 – REVISED JUNE1998 D D D D D D description The SN54LVC646A octal bus transceiver and register is designed for 2.7-V to 3.6-V VCC operation and the SN74LVC646A octal bus
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SN54LVC646A,
SN74LVC646A
SCAS302G
JUNE1998
MIL-STD-833,
SDYU001N,
SCET004,
SCAU001A,
24-Pin
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EV2200-40
Abstract: PCB design layout of gas leakage alarm
Text: bq2040 Gas Gauge IC With SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2040 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record
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bq2040
bq2040
BQ2040EVM-001
EV2200
EV2200-40
PCB design layout of gas leakage alarm
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TDA7267
Abstract: No abstract text available
Text: TDA7267 2W MONO AMPLIFIER CAN DELIVER 2W THD 10% 12V/8Ω INTERNAL FIXED GAIN 32dB NO FEEDBACK CAPACITOR NO BOUCHEROT CELL THERMAL PROTECTION AC SHORT CIRCUIT PROTECTION SVR CAPACITOR FOR BETTER RIPPLE REJECTION LOW TURN-ON/OFF POP STAND-BY MODE s t
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TDA7267
TDA7267
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HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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MOSFET 76107D
Abstract: 76107d TC298
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76107D3,
HUF76107D3S
MOSFET 76107D
76107d
TC298
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EV2200-40
Abstract: SBS 15 battery bq2040 PACK25
Text: bq2040 Gas Gauge IC With SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2040 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record
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bq2040
bq2040
EV2200-40
SBS 15 battery
PACK25
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Untitled
Abstract: No abstract text available
Text: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both
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FRL230R4
e1998
JANSR2N7275
1000K
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: 2 m JANSR2N7404 a r ia s Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June1998 Features Description • 15A,-200V, rDS ON) = 0.290Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs
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JANSR2N7404
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: S HARfiSS FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June1998 Features r D S O N —0.600ft • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSF450D,
FSF450R
e1998
600ft
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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JANSR2N7292
Abstract: No abstract text available
Text: JANSR2N7292 B Formerly FRF150R4 June1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 25A, 100V, ros(ON = 0.070Q The Harris Semiconductor Sector has designed a series of S ECOND GENERATION hardened power M OSFETs of both
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FRF150R4
JANSR2N7292
1000K
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
JANSR2N7292
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Untitled
Abstract: No abstract text available
Text: &«¿»ass JANSR2N7294 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET Formerly FRF250R4 June1998 Description Features • 23A, 200V, ro s O N = 0.115Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% B V q s s
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FRF250R4
JANSR2N7294
25mii.
1000K
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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IC SEM 2105
Abstract: No abstract text available
Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
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FSL9110R4
-100V,
1-30S2
JANSR2N7411
O-205AF
254mm)
IC SEM 2105
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Untitled
Abstract: No abstract text available
Text: IS62LV2568L IS62LV2568LL 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in fo r m a tio n JUNE1998 FEATURES DESCRIPTION • Access times of 70 ns, 85 ns, and 100 ns • Low active power: 126 mW max, L, LL The ISSI IS62LV2568L and IS62LV2568LL are low power
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IS62LV2568L
IS62LV2568LL
JUNE1998
IS62LV2568LL
144-word
highly100
IS62LV2568LL-70T
IS62LV2568LL-70H
IS62LV2568LL-85T
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s
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FSS430R4
e1998
JANSR2N7402
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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