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    KEMET C CHIP DATA SHEET Search Results

    KEMET C CHIP DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    KEMET C CHIP DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1016a

    Abstract: No abstract text available
    Text: Product Data Sheet T498 Series - KEMET High Temperature 150°C Tantalum Chip Capacitor Features • • • • • 150°C Maximum temperature capability Temperature/Voltage derating: 2/3 at 150°C Self-healing mechanism Capacitance: 0.47 to 220µF Reliability: 0.5%/1000 Hrs. @ rated voltage


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    PDF T498D106 1016a

    ATC100B101JW500X

    Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
    Text: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power


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    PDF AGRA10GM AGRA10 IS-95 pro9138 DS04-293RFPP DS04-257RFPP) ATC100B101JW500X ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853

    ATC100B101JW500X

    Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to


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    PDF AGRA10XM AGRA10 IS-95 withstan09-9138 DS04-257RFPP DS04-202RFPP) ATC100B101JW500X 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500

    KX7r

    Abstract: transistor c322 marking 34x C102m 102k 2000v KEMET C330 SERIES 183 2000v diode 3000v Sc 6200 equivalent C315
    Text: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)


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    240x240 lcd

    Abstract: No abstract text available
    Text: Flex Suppressor EF Series Overview Applications The EF Series Flex Suppressor ® is an effective suppressor for high frequency noise generated from electronic devices. The flexible sheet is a polymer base blended with micron sized magnetic powders dispersed into the material. The EF Series are


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    PDF FS8001 240x240 lcd

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


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    PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


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    PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    Z5 1512

    Abstract: No abstract text available
    Text: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input


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    PDF MMG3014NT1 MMG3014NT1 Z5 1512

    MMG3014NT1

    Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    PDF MMG3014NT1 MMG3014NT1 C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in


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    PDF MMRF1012N MMRF1012NR1 250GX-0300-55-22 ATC100B102JT50XT

    KX7r

    Abstract: 273 j 1000v
    Text: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)


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    Arlon CuClad PCB board material

    Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


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    PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 Arlon CuClad PCB board material ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM

    Z5 1512

    Abstract: C0805C209J5GAC
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    PDF MMG3014NT1 MMG3014NT1 Z5 1512 C0805C209J5GAC

    Z5 1512

    Abstract: ERJ-3GEY0R00V MMG3014NT1 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    PDF MMG3014NT1 MMG3014NT1 Z5 1512 ERJ-3GEY0R00V 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    PDF MMG3014NT1 MMG3014NT1

    Z5 1512

    Abstract: M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337
    Text: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input


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    PDF MMG3014NT1 MMG3014NT1 Z5 1512 M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


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    PDF AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


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    PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


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    PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    B10T

    Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


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    PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22

    ATC100B910

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


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    PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


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    PDF MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1

    Untitled

    Abstract: No abstract text available
    Text: KEMET AO-CAP Data Sheet KEMET’s AO-CAP, designated the A700 Series, hasbeentargeted for power management applications. The structure of the AO-CAP uses aluminum as the anode material, aluminum oxide asthe dielectric,and a conductive organic polymer for its counter-electrode material.


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    PDF 180mm 330mm D/7343-31 X/7343-43 T491D/47 A700/47

    Untitled

    Abstract: No abstract text available
    Text: KEMET AO-CAP Data Sheet A700 Series - AO-CAP - Aluminum Organic Capacitor Low-ESR Surface-Mount Aluminum Capacitor with Polymer Cathode KEMET’s AO-CAP, designated the A700 Series, has beentargeted for power management applications. The structure of the AO-CAP


    OCR Scan
    PDF 180mm 330mm D/7343-31 T491D/47