Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LAE4001 Search Results

    LAE4001 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LAE4001R Advanced Semiconductor Transistor Original PDF
    LAE4001R Philips Semiconductors NPN microwave power transistor Original PDF
    LAE4001R Philips Semiconductors Microwave Linear Power Transistor Original PDF
    LAE4001R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    LAE4001R Philips Semiconductors NPN microwave power transistor Scan PDF
    LAE4001RA Philips Semiconductors Microwave Linear Power Transistor Scan PDF

    LAE4001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LAE4001R

    Abstract: TRANSISTOR 80 GHZ
    Text: LAE4001R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LAE4001R is Designed for Class A Linear Applications up to 4.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES: • Class A Operation • PG = 8.5 dB at 85 mW/4.0 GHz • Omnigold Metalization System


    Original     		PDF LAE4001R LAE4001R TRANSISTOR 80 GHZ

    SOT-100

    Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R


    Original     		PDF LAE4001R OT100 SCA53 127147/00/02/pp8 SOT-100 BP317 LAE4001R SC15 transistor jc 817 sot100

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LLS3T31 LAE4000Q LAE4001R) OT-100 OT-100.

    LAE4001R

    Abstract: SC15 MGL069
    Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.


    OCR Scan     		PDF LAE4001R PINNING-SOT100 MBC878 OT100. LAE4001R SC15 MGL069

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,


    OCR Scan     		PDF bbS3T31 LAE4001R bt53131

    marking 113a

    Abstract: IEC134 LAE4001R LAE4001RA r7t marking code
    Text: LA E 4001R LAE4001 RA V PHILIPS I N T E RNATIONAL SbE D • TllDflEb DOMblbfl 502 ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPIM transistors f o r co m m o n -e m itte r class-A linear p ow er am p lifie rs up to 4 G H z. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m tem perature p ro file ,


    OCR Scan     		PDF LAE4001R LAE4001 7110flEb LAE4001R T-31-19 711002b D04bl73 7Z88223 marking 113a IEC134 LAE4001RA r7t marking code

    common emitter amplifier

    Abstract: scotty barrier diode do-214ac LAE2001R SOT100 LAE4001R 2X transistor transistor military SOT-100
    Text: N AMER PH ILIP S /D IS C R E TE OLE D • btaSBTBl GOlHflT? | MAINTENANCE TYPE G LAE2001R for new design usa LAE4001R T-31-^3 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.


    OCR Scan     		PDF LAE2001R LAE4001R) T-31-3 OD14aTa OT-100. to200 common emitter amplifier scotty barrier diode do-214ac LAE2001R SOT100 LAE4001R 2X transistor transistor military SOT-100

    SFE 1730

    Abstract: 113A db marking 113a IEC134 LAE4001R
    Text: N AMER PHILIPS/DISCRETE ^ 53^31 DOIM'UU T ObE D X LAE4001R T - 3 I - f t MICROWAVE LINEAR POWER TRANSISTOR N-P-N tra n sisto r f o r c o m m o n -em itter class-A lin e ar p ow e r a m p lifie rs u p t o 4 G H z . Self-aligned process e n tire ly io n im plan te d and g old sandw ich m e ta lliza tio n ensure an o p tim u m tem perature p ro file ,


    OCR Scan     		PDF LAE4001R SFE 1730 113A db marking 113a IEC134 LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING - SOT1ÛO • Self-aligned process entirely ion implanted and gold sandwich metallization PIN • Optimum temperature profile • Excellent performance and reliability.


    OCR Scan     		PDF LAE4001R

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18


    OCR Scan     		PDF LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S


    OCR Scan     		PDF btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips