Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH5308 Search Results

    LH5308 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH530800A Sharp CMOS 1M (128K x 8) MROM Original PDF
    LH530800AD Sharp CMOS 1M(128K x 8) static RAM Original PDF
    LH530800AD-Y Sharp CMOS 1M(128K x 8)3 V-drive MROM Original PDF
    LH530800AJ Sharp CMOS 1M (128K x 8) MROM Original PDF
    LH530800AN Sharp CMOS 1M(128K x 8) static RAM Original PDF
    LH530800AN-Y Sharp CMOS 1M(128K x 8)3 V-drive MROM Original PDF
    LH530800AU Sharp CMOS 1M(128K x 8) static RAM Original PDF
    LH530800A-Y Sharp CMOS 1M (128K x 8) 3 V-Drive MROM Original PDF

    LH5308 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LH530800A

    Abstract: 32DIP 32-PIN LH53
    Text: LH530800A FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns MAX. CMOS 1M (128K × 8) MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.) NC 1 32 Vcc A16 2 31


    Original     		LH530800A 32-PIN 32-pin, 32QFJ450 450-mil 600-mil LH530800A 32DIP LH53 PDF

    32DIP

    Abstract: 32-PIN LH530800A LH530800A-Y
    Text: LH530800A-Y FEATURES CMOS 1M 128K x 8 3 V-Drive MROM PIN CONNECTIONS • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • Low-power consumption: Operating: 193 mW (MAX.)


    Original     		LH530800A-Y 32-pin, 600-mil 525-mil 32-PIN 32SOP 32DIP LH530800A LH530800A-Y PDF

    32DIP

    Abstract: 32-PIN LH530800A LH530800A-Y
    Text: LH530800A-Y FEATURES CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM PIN CONNECTIONS • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • Low-power consumption: Operating: 193 mW (MAX.)


    Original     		LH530800A-Y 32-pin, 600-mil 525-mil LH530800A-Y 32-PIN 32SOP 32DIP LH530800A PDF

    32DIP

    Abstract: 32-PIN LH530800A a7529 lh5308
    Text: LH530800A CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.) NC


    Original     		LH530800A 32-PIN 32QFJ450 32-pin, 450-mil 600-mil DIP032-P-0600) 32DIP LH530800A a7529 lh5308 PDF

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original     		MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel PDF

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m PDF

    sharp mask rom

    Abstract: No abstract text available
    Text: LH530800A FEATURES CMOS 1M 128K x 8 MROM PIN CONNECTIONS • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW NCZ 1• s 32 □ Vcc A i aC 2 31 □ NC / • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 [iW (MAX.)


    OCR Scan     		LH530800A 32-pin, 600-mil 525-mil 450-mil 32-PIN 530800A39] sharp mask rom PDF

    iz9a

    Abstract: No abstract text available
    Text: LH530800A-Y FEATURES CMOS 1M 128K x 8 3 V-Drive MROM PIN CONNECTIONS • 131,072 words x 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V • Low-power consumption: Operating: 193 mW (MAX.) Standby: 550 (iW (MAX.)


    OCR Scan     		LH530800A-Y 32-pin, 600-mil 525-mil 32-PIN A12IZ iz9a PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH530800A-Y FEATURES • • C M O S 1M 128K x 8 M ask-Program m able ROM PIN CONNECTIONS 131,072 x 8 bit organization 32-PIN DIP 32-PIN SOP Access time: TOP VIEW / 1• S 32 □ Vcc 16C 2 31 □ NC A15C 3 30 □ NC 4 29 □ At A7r 5 28 □ A 13


    OCR Scan     		LH530800A-Y 32-PIN LH530I300A-Y 32-pin, 600-mil DIP32-P-600) 44-pin, QFP44-P-1010) PDF

    sharp mask rom

    Abstract: mask rom 44-pin
    Text: LH530800A I CMOS 1M 128K x 8 Mask Programmable ROM FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 193 mW (MAX.) Standby: 550 (iW (MAX.) • Fully static operation • TTL compatible I/O • 32-PIN DIP


    OCR Scan     		LH530800A 32-pin, 600-mil 525-mil 44-pin, 32-PIN LH530800A LH53C sharp mask rom mask rom 44-pin PDF

    lh5308

    Abstract: No abstract text available
    Text: LH530800A-Y PIN CONNECTIONS FEATURES • 131,072 words CMOS 1M 1 2 8 K - 8 3 V-Drive Mask-Programmable ROM x 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V • Low-power consumption: Operating: 193 mW (MAX.)


    OCR Scan     		LH530800A-Y 32-pin, 600-mil 525-mil 525-mll LH530800A lh5308 PDF

    C38N

    Abstract: No abstract text available
    Text: PRELIMINARY LH530800A-Y FEATURES CMOS 1M 128K x 8 M ask-P rogram m able ROM PIN CONNECTIONS • 131,072 x 8 bit organization • Access time: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V 32-PIN DIP • Fully-static operation


    OCR Scan     		LH530800A-Y 32-PIN 32-pin, 600-mil 525-mil 44-pin, 10x10 LH530800A-Y 44-PIN C38N PDF

    Untitled

    Abstract: No abstract text available
    Text: LH530800A-Y FEATURES C M O S 1M 128K x 8 3 V-Drive M R O M PIN CONNECTIONS • 131,072 words x 8 bit organization 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V • Low-power consumption: Operating: 193 mW (MAX.) Standby: 550 jiW (MAX.) • Static operation • Three-state outputs


    OCR Scan     		LH530800A-Y 32-pin, 600-mil 525-mil 525-m 30800A-Y LH530800A PDF

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600 PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    sharp mask rom

    Abstract: No abstract text available
    Text: CM O S 1 M 1 2 8 K x 8 M R O M FEATURES PIN CONNECTIONS • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 (iW (MAX.) NCC 1• \ 32 A-^IZ A15Z


    OCR Scan     		32-pin, 600-mil 525-mil 450-mil 32-PIN sharp mask rom PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF