LH53517 Search Results

LH53517 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LH53517		Sharp	CMOS 512K (64K x 8) MROM		Original	PDF
LH53517D		Sharp	CMOS 512K(64K x 8) Mask-Programmable ROM		Original	PDF
LH53517D		Sharp	CMOS 512K (64K x 8) Mask-Programmable ROM		Scan	PDF
LH53517N		Sharp	CMOS 512K(64K x 8) Mask-Programmable ROM		Original	PDF
LH53517N		Sharp	CMOS 512K (64K x 8) Mask-Programmable ROM		Scan	PDF
LH53517T		Sharp	CMOS 512K(64K x 8) Mask-Programmable ROM		Original	PDF
LH53517T		Sharp	CMOS 512K (64K x 8) Mask-Programmable ROM		Scan	PDF
LH53517TR		Sharp	CMOS 512K(64K x 8) Mask-Programmable ROM		Original	PDF
LH53517TR		Sharp	CMOS 512K (64K x 8) Mask-Programmable ROM		Scan	PDF

LH53517 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LH53517 Abstract: LH53517D TSOP028-P-0813 Text: LH53517 FEATURES • 65,536 words x 8 bit organization • Access time: 150 ns MAX. CMOS 512K (64K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15 1 28 VCC A12 2 27	Original	PDF	LH53517 28-PIN 28-pin, 600-mil 28-pi 28TSOP LH53517 LH53517D TSOP028-P-0813
TSOP028-P-0813 Abstract: LH53517 LH53517D Text: LH53517 CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES • 65,536 words × 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15	Original	PDF	LH53517 28-PIN 28-pin, 600-m 28TSOP 600-mil TSOP028-P-0813 LH53517 LH53517D
GI9332 Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000 Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8	Original	PDF	MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
flash 64m Abstract: No abstract text available Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161	OCR Scan	PDF	100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m
A12E Abstract: No abstract text available Text: LH53517 CMOS 512K 6 4 K x 8 MROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP • Access time: 150 ns (MAX.) TOP VIEW C ' • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 \|aW (MAX.) AisC 1* 28 □ v cc	OCR Scan	PDF	LH53517 28-pin, 600-mil 450-mil 28-PIN A12E
Untitled Abstract: No abstract text available Text: LH53517 FEATURES CMOS 512K 6 4 K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW / • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 [iW (MAX.) A ,5 n 1• \ 28 ^ Vcc	OCR Scan	PDF	LH53517 28-pin, 600-mil 450-mil LH53517 28-PIN 28-pin
Untitled Abstract: No abstract text available Text: LH53517 FEATURES CMOS 512K 64K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) TOP VIEW 28-PIN DIP 28-PIN SOP S • Low-power consumption: Operating: 165 mW (MAX.) A15C 1• N 28 □ V qc A12IZ 2 27 Zl a 14 a 7C	OCR Scan	PDF	LH53517 28-pin, 600-mil 450-mil 28-PIN A12IZ
536G Abstract: LH534600 Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)	OCR Scan	PDF	LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600
lh57257 Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429	OCR Scan	PDF	IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02
LH231G Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g\|g\|ï\|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200	OCR Scan	PDF	28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
LQ070T5BG01 Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66	OCR Scan	PDF	109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
IR3Y29B Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02 Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX	OCR Scan	PDF	ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02
LH53517 Abstract: LH53517D TSOP028-P-0813 1LD22 1LD2 Text: CMOS 512K 64K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP TOP VIEW "N Z ' 1• 28 A i 2C 2 27 □ a 7I= 3 26 □ a 13 Agd 4 25 □ a 5C 5 24 ID Ag A-isEI Standby: 550 \l\N (MAX.) • Static operation	OCR Scan	PDF	LH53517 28-pin, 600-mil 450-mil LH53517 28-PIN 28TSOP LH53517D TSOP028-P-0813 1LD22 1LD2
48 tsop flash pinout Abstract: LH23512 Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 \|- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)	OCR Scan	PDF	LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

IR2E27A Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31 Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080	OCR Scan	PDF	Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
lh5s4 Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply	OCR Scan	PDF	LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Untitled Abstract: No abstract text available Text: CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 2 8 -P IN D IP 2 8 -P IN SO P T O P V IE W / - A15C • Low-power consumption: Operating: 165 mW (MAX.) 28 ^ v cc	OCR Scan	PDF	28-pin, 600-mil 450-mil LH53517 28TSOP TSOP028-P-0813)