LH53517
Abstract: LH53517D TSOP028-P-0813
Text: LH53517 FEATURES • 65,536 words x 8 bit organization • Access time: 150 ns MAX. CMOS 512K (64K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15 1 28 VCC A12 2 27
|
Original
|
PDF
|
LH53517
28-PIN
28-pin,
600-mil
28-pi
28TSOP
LH53517
LH53517D
TSOP028-P-0813
|
TSOP028-P-0813
Abstract: LH53517 LH53517D
Text: LH53517 CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES • 65,536 words × 8 bit organization • Access time: 150 ns (MAX.) PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.) A15
|
Original
|
PDF
|
LH53517
28-PIN
28-pin,
600-m
28TSOP
600-mil
TSOP028-P-0813
LH53517
LH53517D
|
536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
|
OCR Scan
|
PDF
|
LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
|
LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
|
OCR Scan
|
PDF
|
28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
|
LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
|
OCR Scan
|
PDF
|
109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
|
A12E
Abstract: No abstract text available
Text: LH53517 CMOS 512K 6 4 K x 8 MROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP • Access time: 150 ns (MAX.) TOP VIEW C ' • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 |aW (MAX.) AisC 1* 28 □ v cc
|
OCR Scan
|
PDF
|
LH53517
28-pin,
600-mil
450-mil
28-PIN
A12E
|
Untitled
Abstract: No abstract text available
Text: LH53517 FEATURES CMOS 512K 6 4 K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW / • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 [iW (MAX.) A ,5 n 1• \ 28 ^ Vcc
|
OCR Scan
|
PDF
|
LH53517
28-pin,
600-mil
450-mil
LH53517
28-PIN
28-pin
|
Untitled
Abstract: No abstract text available
Text: LH53517 FEATURES CMOS 512K 64K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) TOP VIEW 28-PIN DIP 28-PIN SOP S • Low-power consumption: Operating: 165 mW (MAX.) A15C 1• N 28 □ V qc A12IZ 2 27 Zl a 14 a 7C
|
OCR Scan
|
PDF
|
LH53517
28-pin,
600-mil
450-mil
28-PIN
A12IZ
|
LH53517
Abstract: LH53517D TSOP028-P-0813 1LD22 1LD2
Text: CMOS 512K 64K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization 28-PIN DIP 28-PIN SOP TOP VIEW "N Z ' 1• 28 A i 2C 2 27 □ a 7I= 3 26 □ a 13 Agd 4 25 □ a 5C 5 24 ID Ag A-isEI Standby: 550 \l\N (MAX.) • Static operation
|
OCR Scan
|
PDF
|
LH53517
28-pin,
600-mil
450-mil
LH53517
28-PIN
28TSOP
LH53517D
TSOP028-P-0813
1LD22
1LD2
|
lh5359
Abstract: e5bx
Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.
|
OCR Scan
|
PDF
|
LH-532KXX
LH532100BD/BN/BT/BS/BSR/BU
532048D
53V2P00A
532600D
532000B
532000BD
LH-532C
LH-5326XX
lh5359
e5bx
|
lh5s4
Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply
|
OCR Scan
|
PDF
|
LH53V1ROON/T
LH53V2R00AN/AT
LH53V2T00E
LH53V2YOONÆ
LH53V4T00E
LH53V4R00AN/AT
LH53V4Y00NÆ
32SOP/32TSOP
32TSOP
lh5s4
LH-MN47XX
lh5s4axx
LH5359
LH5s
lh5317
LH532CXX
32DIP
|
Untitled
Abstract: No abstract text available
Text: CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 2 8 -P IN D IP 2 8 -P IN SO P T O P V IE W / - A15C • Low-power consumption: Operating: 165 mW (MAX.) 28 ^ v cc
|
OCR Scan
|
PDF
|
28-pin,
600-mil
450-mil
LH53517
28TSOP
TSOP028-P-0813)
|
