44-PIN
Abstract: LH5364000N A6527
Text: CMOS 64M 8M x 8/4M × 16 Mask-Programmable ROM LH5364000 FEATURES • 8,388,608 words × 8 bit organization (Byte mode) 4,194,304 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 µW (MAX.)
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Original
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LH5364000
44-PIN
44-pin,
600-mil
LH5364000
64M-bit
44SOP
LH5364000N
A6527
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PDF
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Untitled
Abstract: No abstract text available
Text: LH5364000 FEATURES • 8,388,608 words Byte mode 4,194,304 words (Word mode) CMOS 64M (8M x 8/4M x 16) Mask-Programmable ROM PIN CONNECTIONS x 8 bit organization 44-PIN SOP x 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.)
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OCR Scan
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LH5364000
44-PIN
44-pin,
600-mil
LH5364000
64M-bit
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PDF
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536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
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OCR Scan
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LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
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PDF
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lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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OCR Scan
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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PDF
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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OCR Scan
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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PDF
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lh537
Abstract: 42DIP lh533200 LH535g
Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H
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OCR Scan
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LH-538VXX
LH-5387XX
LH-538NXX
32DIP/32SOP/32TSOP
32DIP/32SOP/
32TSOP
42DIP/44SOP
48TSOP0)
lh537
42DIP
lh533200
LH535g
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PDF
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flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
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OCR Scan
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100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time
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OCR Scan
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28kx8
128kx
256kx
LH53H4000
LH532600
LH532000B-1
LH531000B
LH532000B
LH534600C
LH534P00B
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PDF
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48 tsop flash pinout
Abstract: LH23512
Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
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OCR Scan
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LH2369
LH23126
LH23255
LH53259
LH23512
LH53517
LH53H0900
LH531VOO
LH530800A
LH530800A-Y
48 tsop flash pinout
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PDF
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IR2E27A
Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080
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OCR Scan
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Core28
IR2C24A/AN
IR2C26
IR2C30/N
IR2C32
IR2C33
IR2C34
IR2C36
IR2C38/N
IR2C43
IR2E27A
IR2C53
IR2E02
IR2E27
IR2E10
IR3N34
IR2E31A
IR2E01
IR2C07
ir2e31
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS 64M 8M x 8/4M x 16 MROM FEATURES • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 \i\N (MAX.) • Static operation
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OCR Scan
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44-pin,
600-mil
44-PIN
D15/A.
600-rnil
LH5364000
OP044-P-0600)
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS 64M 8 M x 8/4 M x 16 MROM FEATURES 44-P IN SO P T O P V IE W s "N < EL • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) PIN CONNECTIONS A -|8 IZ 43 — I a 19 A 17IZ 3 42 ^ Ag • Access time: 150 ns (MAX.)
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OCR Scan
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44-pin,
600-mil
LH5364000
64M-bit
LH5364000
44SOP
OP044-P-0600)
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PDF
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