Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LINEAR CLASS H AMPLIFIER Search Results

    LINEAR CLASS H AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3EM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3LM33A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 300 mA, DFN4D Visit Toshiba Electronic Devices & Storage Corporation
    TCR3UF50A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LINEAR CLASS H AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CLASS H POWER AMPLIFIER

    Abstract: capacitor 2u2 220n capacitor datasheet pink noise generator GC590 GS3013 220n capacitor 2u2 k 305 v
    Text: Linear Class H Current Manager Hybrid GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system The GS3013 is a linear hybrid containing three amplifier stages. • current mode class H output stage This product incorporates a current mode class H power


    Original
    GS3013 225in 130in 110inless CLASS H POWER AMPLIFIER capacitor 2u2 220n capacitor datasheet pink noise generator GC590 220n capacitor 2u2 k 305 v PDF

    CLASS H POWER AMPLIFIER

    Abstract: pink noise generator schematics "Class H Amplifier" pink noise generator circuit diagram of transducer 180-20K thd resistors 1k weight transducer class h power amplifier schematic 12k resistor
    Text: Linear Class H Amplifier GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage The GC590 is a linear amplifier system containing three amplifier stages. • current drive power amp This product incorporates a current mode class H power


    Original
    GC590 CLASS H POWER AMPLIFIER pink noise generator schematics "Class H Amplifier" pink noise generator circuit diagram of transducer 180-20K thd resistors 1k weight transducer class h power amplifier schematic 12k resistor PDF

    Z4LB-S10V2

    Abstract: Z4LB-S30V2 Z4LB-A3040PV2 omron sensor 5v laser beam laser diode
    Text: Parallel Beam Linear Sensor Z4LB-V2 Visible Red Class II Laser Width/Profile Measurement Sensor Providing High-Speed Precision Measurement with Flexible Operation H FDA Class II IEC Class 2 visible red laser ensures ease of optical axis adjustment H H 5 micron resolution maximum


    Original
    ISO9001-approval ISO14001-approval 1-800-55-OMRON Z4LB-S10V2 Z4LB-S30V2 Z4LB-A3040PV2 omron sensor 5v laser beam laser diode PDF

    VK200 INDUCTOR

    Abstract: inductor vk200 VK200 4B inductor choke vk200 MRF240 Unelco Bradley Semiconductor allen bradley resistor VK200-4B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt V H F large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    OCR Scan
    MRF240 VK200 INDUCTOR inductor vk200 VK200 4B inductor choke vk200 Unelco Bradley Semiconductor allen bradley resistor VK200-4B PDF

    Untitled

    Abstract: No abstract text available
    Text: C3EIMIMUM C O R P O R A T I Linear Class H Current M an ager Hybrid O N GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system T h e G S 3 0 1 3 is a lin e a r h y b rid c o n ta in in g th re e a m p lifie r s ta g e s . • current mode class H output stage


    OCR Scan
    GS3013 225in PDF

    BZY88-C3V3

    Abstract: BLW33 BY206 702 P TRANSISTOR 100A-4R3-C-PX-50 carbon resistor
    Text: bSE T> m 7110flEb 00b3514 347 « P H I N BLW33 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation


    OCR Scan
    711002b 00b3214 BLW33 7Z7771 BLW33 BZY88-C3V3 BY206 702 P TRANSISTOR 100A-4R3-C-PX-50 carbon resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by MRF3104/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF3104 M RF3105 M RF3106 T h e R F L in e M icrow ave Linear Power Transistors Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:


    OCR Scan
    MRF3104/D MRF3104 MRF3105 MRF3106 RF3104 RF3105 RF3106 MOTOS131 PDF

    L9838

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHL9838/D SEMICONDUCTOR TECHNICAL DATA M H L9838 The RF Line C ellular Band Linear A m plifier 8.0 W, 31 dB 8 00-925 MHz LINEAR AMPLIFIER Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding


    OCR Scan
    MHL9838/D L9838 L9838 PDF

    capacitor 3k3

    Abstract: GENNUM GS3034 EH305 DT 8210 GS3034
    Text: Linear Class H CIC Size Hybrid GS3034 - DATA SHEET FEATURES This new breed of output stage adapts the bias current of the receiver to the user's listening environment. In relatively loud environments the receiver will be fully biased similar to a traditional class A amplifier. However, as the loudness of the


    Original
    GS3034 C-101, capacitor 3k3 GENNUM GS3034 EH305 DT 8210 PDF

    MHL9236

    Abstract: MHL9236M
    Text: MOTOROLA Order this document by MHL9236/D SEMICONDUCTOR TECHNICAL DATA M H L9236 M HL9236M The RF Line C ellular Band Linear Am plifiers Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding


    OCR Scan
    MHL9236/D MHL9236 MHL9236M MHL9236/D MHL9236M PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW53601 The RF Line M icrowave Linear Power Transistor . . . designed primarily for wideband, largt-signal output and driver amplifier stages in the 1.0 to 3.0 G H z frequency range. • Designed for Class A or AB, C om m on-Em itter Linear Power Amplifiers


    OCR Scan
    MRW53601 MRW53601 PDF

    Untitled

    Abstract: No abstract text available
    Text: - P 3 3 - o q LV2931E50S \ ShE T> • PHILIPS INTERNATIONAL 71106Sb Q04b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended fo r use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GHz frequency range.


    OCR Scan
    LV2931E50S 71106Sb Q04b274 T-33-09 711005b 004b277 MSA09S PDF

    "Class H Amplifier"

    Abstract: No abstract text available
    Text: GENNUM C O R P O R A T I O Linear Class H Amplifier N GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage T h e G C 5 9 0 is a lin e a r a m p lif ie r s y s te m c o n t a in in g th re e a m p lif ie r s tag es. • current drive power amp


    OCR Scan
    GC590 "Class H Amplifier" PDF

    2n2222 npn transistor

    Abstract: No abstract text available
    Text: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan
    MRF862/D 2PHX33726Q-0 2n2222 npn transistor PDF

    ta309

    Abstract: MSA094 LV2931E50S Broadband emitter nm LED
    Text: " 1 ^ 3 3 - O R LV2931E50S \ ShE T> PHILIPS INT ERNATIONAL • ?110fiSb DD4b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR N PN silicon planar microwave power transistor intended for use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GH z frequency range.


    OCR Scan
    33-OR LV2931E50S DD4b27M 711002b Q04b277 T-33-09 00Mb27Ã june1992 ta309 MSA094 LV2931E50S Broadband emitter nm LED PDF

    class td amplifier

    Abstract: 40202 2X24 YLII50 GLT100 mullard septar socket
    Text: V.H.F. BEAM POWER TETRODE YLII50 TENTATIVE DATA QUICK REFERENCE DATA Radiation and convection cooled beam power tetrode intended for use as a linear v .h .f . amplifier for s. s .b .,C la s s 'C' v .h .f . amplifier or l .f . Class 'AB' amplifier or modulator.


    OCR Scan
    YLII50 class td amplifier 40202 2X24 YLII50 GLT100 mullard septar socket PDF

    RTC146

    Abstract: IEC134 LKE21004R LTE21009R
    Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.


    OCR Scan
    LTE21009R) D014141 LKE21004R FO-53, IEC134) RTC146 IEC134 LKE21004R LTE21009R PDF

    NPN transistor 2n2222 Zin

    Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
    Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan
    MRF858/D MK145BP 2PHX33729Q-0 NPN transistor 2n2222 Zin 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1 PDF

    2n2222 npn

    Abstract: 2n2222 npn transistor MRF857 mrf857s
    Text: O rder th is data sheet by MRF857/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF857 M RF857S T h e RF Line NPN Silicon RF Pow er TVansistor M otorola P referred Devices CLASS A 800-960 MHz 2.1 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan
    MRF857/D 2PHX33732Q-0 2n2222 npn 2n2222 npn transistor MRF857 mrf857s PDF

    Untitled

    Abstract: No abstract text available
    Text: _ S ¡9961 Vishay Siliconix 12-V Voice Coil Motor Driver FEATURES • 1.8-A H-Bridge Output • Class B Linear Operation • Externally Programmable Gain and Bandwidth • Undervoltage Head Retract • Programmable Retract Current


    OCR Scan
    Si9961 Si99ximum 250-m PDF

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan
    LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,


    OCR Scan
    bbS3T31 LAE4001R bt53131 PDF

    transistor tt 2222

    Abstract: BLW33 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr
    Text: N AMER P H I LI PS / DI S CR ET E b^E » • b b s a 'm □ G a 'm ? J Daa IAPX BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation


    OCR Scan
    BLW33 7Z77714 BLW33 transistor tt 2222 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr PDF

    Untitled

    Abstract: No abstract text available
    Text: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan
    LKE1004R LTE21009R) PDF