CLASS H POWER AMPLIFIER
Abstract: capacitor 2u2 220n capacitor datasheet pink noise generator GC590 GS3013 220n capacitor 2u2 k 305 v
Text: Linear Class H Current Manager Hybrid GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system The GS3013 is a linear hybrid containing three amplifier stages. • current mode class H output stage This product incorporates a current mode class H power
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GS3013
225in
130in
110inless
CLASS H POWER AMPLIFIER
capacitor 2u2
220n capacitor datasheet
pink noise generator
GC590
220n capacitor
2u2 k 305 v
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CLASS H POWER AMPLIFIER
Abstract: pink noise generator schematics "Class H Amplifier" pink noise generator circuit diagram of transducer 180-20K thd resistors 1k weight transducer class h power amplifier schematic 12k resistor
Text: Linear Class H Amplifier GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage The GC590 is a linear amplifier system containing three amplifier stages. • current drive power amp This product incorporates a current mode class H power
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GC590
CLASS H POWER AMPLIFIER
pink noise generator schematics
"Class H Amplifier"
pink noise generator
circuit diagram of transducer
180-20K
thd resistors 1k
weight transducer
class h power amplifier schematic
12k resistor
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Z4LB-S10V2
Abstract: Z4LB-S30V2 Z4LB-A3040PV2 omron sensor 5v laser beam laser diode
Text: Parallel Beam Linear Sensor Z4LB-V2 Visible Red Class II Laser Width/Profile Measurement Sensor Providing High-Speed Precision Measurement with Flexible Operation H FDA Class II IEC Class 2 visible red laser ensures ease of optical axis adjustment H H 5 micron resolution maximum
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ISO9001-approval
ISO14001-approval
1-800-55-OMRON
Z4LB-S10V2
Z4LB-S30V2
Z4LB-A3040PV2
omron sensor 5v laser beam
laser diode
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VK200 INDUCTOR
Abstract: inductor vk200 VK200 4B inductor choke vk200 MRF240 Unelco Bradley Semiconductor allen bradley resistor VK200-4B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt V H F large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain
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MRF240
VK200 INDUCTOR
inductor vk200
VK200 4B inductor
choke vk200
Unelco
Bradley Semiconductor
allen bradley resistor
VK200-4B
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Untitled
Abstract: No abstract text available
Text: C3EIMIMUM C O R P O R A T I Linear Class H Current M an ager Hybrid O N GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system T h e G S 3 0 1 3 is a lin e a r h y b rid c o n ta in in g th re e a m p lifie r s ta g e s . • current mode class H output stage
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GS3013
225in
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BZY88-C3V3
Abstract: BLW33 BY206 702 P TRANSISTOR 100A-4R3-C-PX-50 carbon resistor
Text: bSE T> m 7110flEb 00b3514 347 « P H I N BLW33 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation
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711002b
00b3214
BLW33
7Z7771
BLW33
BZY88-C3V3
BY206
702 P TRANSISTOR
100A-4R3-C-PX-50
carbon resistor
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by MRF3104/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF3104 M RF3105 M RF3106 T h e R F L in e M icrow ave Linear Power Transistors Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:
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MRF3104/D
MRF3104
MRF3105
MRF3106
RF3104
RF3105
RF3106
MOTOS131
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L9838
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHL9838/D SEMICONDUCTOR TECHNICAL DATA M H L9838 The RF Line C ellular Band Linear A m plifier 8.0 W, 31 dB 8 00-925 MHz LINEAR AMPLIFIER Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
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MHL9838/D
L9838
L9838
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capacitor 3k3
Abstract: GENNUM GS3034 EH305 DT 8210 GS3034
Text: Linear Class H CIC Size Hybrid GS3034 - DATA SHEET FEATURES This new breed of output stage adapts the bias current of the receiver to the user's listening environment. In relatively loud environments the receiver will be fully biased similar to a traditional class A amplifier. However, as the loudness of the
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GS3034
C-101,
capacitor 3k3
GENNUM GS3034
EH305
DT 8210
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MHL9236
Abstract: MHL9236M
Text: MOTOROLA Order this document by MHL9236/D SEMICONDUCTOR TECHNICAL DATA M H L9236 M HL9236M The RF Line C ellular Band Linear Am plifiers Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
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MHL9236/D
MHL9236
MHL9236M
MHL9236/D
MHL9236M
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW53601 The RF Line M icrowave Linear Power Transistor . . . designed primarily for wideband, largt-signal output and driver amplifier stages in the 1.0 to 3.0 G H z frequency range. • Designed for Class A or AB, C om m on-Em itter Linear Power Amplifiers
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MRW53601
MRW53601
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Untitled
Abstract: No abstract text available
Text: - P 3 3 - o q LV2931E50S \ ShE T> • PHILIPS INTERNATIONAL 71106Sb Q04b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended fo r use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GHz frequency range.
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LV2931E50S
71106Sb
Q04b274
T-33-09
711005b
004b277
MSA09S
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"Class H Amplifier"
Abstract: No abstract text available
Text: GENNUM C O R P O R A T I O Linear Class H Amplifier N GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage T h e G C 5 9 0 is a lin e a r a m p lif ie r s y s te m c o n t a in in g th re e a m p lif ie r s tag es. • current drive power amp
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GC590
"Class H Amplifier"
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2n2222 npn transistor
Abstract: No abstract text available
Text: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF862/D
2PHX33726Q-0
2n2222 npn transistor
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ta309
Abstract: MSA094 LV2931E50S Broadband emitter nm LED
Text: " 1 ^ 3 3 - O R LV2931E50S \ ShE T> PHILIPS INT ERNATIONAL • ?110fiSb DD4b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR N PN silicon planar microwave power transistor intended for use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GH z frequency range.
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33-OR
LV2931E50S
DD4b27M
711002b
Q04b277
T-33-09
00Mb27Ã
june1992
ta309
MSA094
LV2931E50S
Broadband emitter nm LED
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class td amplifier
Abstract: 40202 2X24 YLII50 GLT100 mullard septar socket
Text: V.H.F. BEAM POWER TETRODE YLII50 TENTATIVE DATA QUICK REFERENCE DATA Radiation and convection cooled beam power tetrode intended for use as a linear v .h .f . amplifier for s. s .b .,C la s s 'C' v .h .f . amplifier or l .f . Class 'AB' amplifier or modulator.
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YLII50
class td amplifier
40202
2X24
YLII50
GLT100
mullard
septar socket
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RTC146
Abstract: IEC134 LKE21004R LTE21009R
Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.
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LTE21009R)
D014141
LKE21004R
FO-53,
IEC134)
RTC146
IEC134
LKE21004R
LTE21009R
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NPN transistor 2n2222 Zin
Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF858/D
MK145BP
2PHX33729Q-0
NPN transistor 2n2222 Zin
2N2222 npn transistor
2N2222 transistor SOA
358E-06
NT 407 F TRANSISTOR TO 220
2N2222 motorola
ATIC 59 C1
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2n2222 npn
Abstract: 2n2222 npn transistor MRF857 mrf857s
Text: O rder th is data sheet by MRF857/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF857 M RF857S T h e RF Line NPN Silicon RF Pow er TVansistor M otorola P referred Devices CLASS A 800-960 MHz 2.1 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF857/D
2PHX33732Q-0
2n2222 npn
2n2222 npn transistor
MRF857
mrf857s
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Untitled
Abstract: No abstract text available
Text: _ S ¡9961 Vishay Siliconix 12-V Voice Coil Motor Driver FEATURES • 1.8-A H-Bridge Output • Class B Linear Operation • Externally Programmable Gain and Bandwidth • Undervoltage Head Retract • Programmable Retract Current
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Si9961
Si99ximum
250-m
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IC BL 176A
Abstract: No abstract text available
Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.
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LBE/LCE2003S
LBE/LCE2009S
LBE/LCE2009SA
LBE2003S
LBE2009S
LCE2003S
LCE2009S
LBE2009SA
LCE2009SA
IC BL 176A
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE4001R
bt53131
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transistor tt 2222
Abstract: BLW33 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr
Text: N AMER P H I LI PS / DI S CR ET E b^E » • b b s a 'm □ G a 'm ? J Daa IAPX BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation
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BLW33
7Z77714
BLW33
transistor tt 2222
BY206
BZY88-C3V3
DDST320
JH transistor
BZY88C
philips mfr
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Untitled
Abstract: No abstract text available
Text: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.
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LKE1004R
LTE21009R)
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