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    LOW NOISE X BAND HEMT TRANSISTOR Search Results

    LOW NOISE X BAND HEMT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE X BAND HEMT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3

    MGF4963BL

    Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		PDF MGF4964BL MGF4964BL 20GHz 4000pcs

    MGF4964

    Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		PDF MGF4964BL MGF4964BL 20GHz 4000pcs MGF4964 Micro-X marking "K" transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496

    1 928 405 766

    Abstract: GD-32 rogers 4403
    Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)


    Original     		PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403

    RO4350B ROGERS

    Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
    Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101


    Original     		PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs RO4350B ROGERS transistor "micro-x" "marking" 3 RO4350B max current GD-32 low noise Micro-X marking "K" RO4350B

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101


    Original     		PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs

    MGF1802

    Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
    Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a


    Original     		PDF MGF431OD 12GHz MGF4314D: MGF4316D: MGF4317D: MGF4318D: 12GHz MGF4S17D-O1 MGF43I4E45. MGF1802 mgf431 MGF43180 mitsubishi mgf MGF1902B-65

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original     		PDF MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581

    low noise x band hemt transistor

    Abstract: Low Noise HEMT TC2623 transistor BP 109 BMH204 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
    Text: TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		PDF TC2623 12GHz TC2623 70mils BMH204 12GHz DSTC26237003 low noise x band hemt transistor Low Noise HEMT transistor BP 109 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor

    low noise hemt

    Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
    Text: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		PDF EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS

    fet transistor a03

    Abstract: MGFC4419
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain


    OCR Scan     		PDF MGFC4419G MGFC4419G 12GHz fet transistor a03 MGFC4419

    MGF4918D

    Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
    Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4910D 12GHz F4914D: F4916D: F4917D: F4918D: 12GHz MGF4914D MGF4918D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d

    GaAs FET HEMT Chips

    Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)


    OCR Scan     		PDF MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor

    MGF4310

    Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310D 12GHz MGF4314D: MGF4316D. MGF4317D: MGF4318D: M5M27C102P RV-15 MGF4310 MGF4314D MGF4318D MGF4316D MGF4317D MGF4317 MGF4318 MGF431

    MGF4310

    Abstract: 6020M f491
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF F4910F GF4910F MGF4310F 12GHz GF4919F: GF4916F: 12GHz 27C102P, RV-15 MGF4310 6020M f491

    MGF4916F

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF4910F F4310F 4910F MGF4916F

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4410D Series I SUPER LOW NOISE InGaAs HEMT i DESCRIPTION The M G F 4 4 1 0D series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF F4410D MGF4416D MGF4417D MGF4418D

    MGF4316F

    Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4310F 12GHz MGF4319F: MGF4316F: M5M27C102P RV-15 1048576-BIT 65536-W0RD MGF4316F MGF4319F MGF4310 MGF4319 251C

    MGF4918D

    Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: M5M27C102P MGF4918D mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917

    Untitled

    Abstract: No abstract text available
    Text: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF F4910E F4310E F4914E F4918E F4919E MGF4910E

    MGF4418D

    Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: unit071 0017A6b MGF4418D low noise x band hemt transistor NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499

    f4316

    Abstract: F4319F MGF4319F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF F4310F F4316F F4319F f4316 F4319F MGF4319F