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    MB81C74 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB81C74-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C74-30 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MB81C74-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    MB81C74 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    CX20106A

    Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
    Text: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010


    Original     		PDF GAS105 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE1012 MOC3012 CX20106A GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401

    MB81C74-35

    Abstract: No abstract text available
    Text: March 1990 Edition 3.0 ~ FUJITSU DATA SHEET M BQ 1C74-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C74 is a 16,384 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous


    OCR Scan     		PDF 1C74-25/-30/-35 64K-BIT MB81C74 AcceB81C74-30 MB81C74-35 22-LEADS DIP-22P-M04) MB81C74-25 MB81C74-30 MB81C74-35

    MB81C74-25P

    Abstract: MB81C74-25 MB81C74-35 MB81C74
    Text: March 1990 Edition 3.0 FUJITSU - DATASHEET MB81C74-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu M B81C74 is a 16,384 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous


    OCR Scan     		PDF MB81C74-25/-30/-35 64K-BIT B81C74 MB81C74-25 MB81C74-30 MB81C74-35 22-LEADS DIP-22P-M04) 2200B MB81C74-25P MB81C74-35 MB81C74

    81C74-25

    Abstract: MB81C74-35 MB81C74 81C74-35
    Text: CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C74-25 MB81C74-35 December 1987 Edition 2.0 16Kx 4 BIT 65,536-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 8 1C 7 4 is a 16,384-words b y 4-bits static random access


    OCR Scan     		PDF 536-BIT MB81C74-25 MB81C74-35 536-BIT) 384-words 81C74 B81C74-35 DIP-22P-M04) 81C74-25 MB81C74-35 MB81C74 81C74-35

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB82B74-15/-20 64K-BIT HIGH SPEED BI-CMOS SRAM 16,384 WORDS x 4 BITS Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB62B74 is a 16,384-words by 4 -b its static random access memory fabricated


    OCR Scan     		PDF MB82B74-15/-20 64K-BIT MB62B74 384-words MB82B74 300mil DIP-22 P-M04 MB82B74are MB82B74-15

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


    OCR Scan     		PDF AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    M5M5188P-55

    Abstract: MCM6288P30 MB81C74-35 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 MB81C74-25 P4C188
    Text: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS y -1TOD (ns) y TWP min (ns) S t a t i c tt & TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N À m I DD max


    OCR Scan     		PDF 384X4) 22PiN7188 KM64B5B-25L LH5162-25 LH5162-35 LH5165-25 P4C188-45 P4C188-55 P4C188L-17 M5M5188P-55 MCM6288P30 MB81C74-35 LH5165-35 M5M5188P-45 MB81C74-25 P4C188

    tc55416p

    Abstract: MB81C74-35 MCM6288P30 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25
    Text: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS -1- y TOD (ns) y TWP min (ns) S t a t i c & tt TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) m M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N I DD max (mA)


    OCR Scan     		PDF 384X4) 22PiN7188 KM64B5B-25L LH5162-25 LH5162-35 LH5165-25 VB1C62P-55L V61CB2P-70 V61C62P-70L VT62KS4-25 tc55416p MB81C74-35 MCM6288P30 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000