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    Merit Sensor MeriTREK

    Pressure Sensor Development Tools Pressure sensor evaluation kit, TR Series, 100 psia face-seal included
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    Mouser Electronics MeriTREK
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    MERIT Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    980131-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980131-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980132-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980132-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980133-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980134-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980135-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    980135-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981131-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981131-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981132-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981132-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981133-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981134-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981135-184-2MCF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF
    981135-184-2MPF Meritec Connector: Board to Board Connector: SKT: 184: SOL: RATHRU Original PDF

    MERIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sihp22n6

    Abstract: SiHP22N60E-GE3
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


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    PDF SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihp22n6 SiHP22N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved


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    PDF SiHG16N50C 2002/95/EC O-247AC O-247AC SiHG16N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHG47N60S

    Abstract: ktp12
    Text: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 • 100 % Avalanche Tested RoHS 216 • Ultra Low Gate Charge COMPLIANT Qgs (nC) 39 • Ultra Low Ron Qgd (nC) 57 • Compliant to RoHS Directive 2002/95/EC


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    PDF SiHG47N60S 2002/95/EC O-247AC SiHG47N60S-E3 11-Mar-11 ktp12

    SiHF22N60

    Abstract: SiHF22N60S-E3 0949 sihF22n6
    Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron


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    PDF SiHF22N60S 2002/95/EC O-220 SiHF22N60S-E3 11-Mar-11 SiHF22N60 0949 sihF22n6

    DB14 connector male

    Abstract: 980211-1M1-3M0 X3-131-1986 SCSI CONNECTOR 50 pin male 980211-1M1-3M0R SCSI 50 pin connector to 25 pin kc 637 DB14N db15 male dB06 diode
    Text: SCSI MALE TO MALE INTERFACE ADAPTER 50 Position Male to 68 Position Male 8 Bit to 16 Bit/16 Bit to 8 Bit Meritec’s Male to Male adapter allows reliable interfacing between SCSI-1 and SCSI-3. The adapter mates with 50 position .100 x .100 SCSI-1 receptacles and 68 position .050 x .100 grid SCSI-3


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    PDF Bit/16 980211-1M1-3M0 980211-1M1-3M0R X3-131-1986. 888-MERITEC DB14 connector male 980211-1M1-3M0 X3-131-1986 SCSI CONNECTOR 50 pin male 980211-1M1-3M0R SCSI 50 pin connector to 25 pin kc 637 DB14N db15 male dB06 diode

    FLOW METER

    Abstract: pulse rate meter XSJ-39 converter wiring LYPR540AH DATASHEET XSJ-39B LS-15A LS-15B LS-25A SXP-3113
    Text: LS Rotary Piston flow meter Model LS rotary piston flow meter hereafter for short called flow meter is a kind of volumetric flow-measuring instrument, mainly used to measure volume flow of liquid. Its clearest merit is suitability for measurement of rather


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    PDF XSJ-39 FLOW METER pulse rate meter converter wiring LYPR540AH DATASHEET XSJ-39B LS-15A LS-15B LS-25A SXP-3113

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


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    PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17


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    PDF SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    C180-24

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


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    PDF SiHG47N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C180-24

    Untitled

    Abstract: No abstract text available
    Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


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    PDF SiHP24N65E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    pd 223

    Abstract: SiHP18N50C SiHP18N50C-E3
    Text: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)


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    PDF SiHP18N50C 2002/95/EC O-220AB SiHP18N50C-E3 11-Mar-11 pd 223

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


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    PDF SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


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    PDF SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


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    PDF SiHD7N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG64N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.047 Qg max. (nC) 369 • Reduced Switching and Conduction Losses


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    PDF SiHG64N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP21N65EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET using E Series Technology • Reduced Trr, Qrr, and Irrm • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


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    PDF SiHP21N65EF O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TIS69

    Abstract: TIS70 tis70 texas instruments
    Text: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit


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    PDF TIS69, TIS70 TIS69 tis70 texas instruments

    2n5549

    Abstract: No abstract text available
    Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit


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    PDF 2N5549

    4328T

    Abstract: No abstract text available
    Text: TYPES 2N4223, 2N4224 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO. O LS 7311350, JU LY 1 9 7 0 -R E V IS E D M A R C H 1973 FOR V H F AM PLIFIER AND MIXER APPLICATIONS • Low Crgs . . . 2 pF Max • High lYfsl/C jss Ratio High-Frequency Figure-of-Merit


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    PDF 2N4223, 2N4224 4328T

    2N5546

    Abstract: No abstract text available
    Text: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit


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    PDF 2N5545, 2N5546, 2N5547 2N5546

    2SK152

    Abstract: 2SK152 Sony 2sk152 equivalent
    Text: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.


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    PDF 2SK152 2SK152 2SK152 Sony 2sk152 equivalent

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I ^ L O G I C / A R R A Y S / M E M TS D E j 44Tb2D3 DDlGblO 92D HD74HC4040 # 10610 T - H 5 ~ 3 3 - n 12-stage Binary Counter The HD74HC4040 is a 12 stage counter. This device is incre- | D PIN ARRANGEMENT merited on the falling edge negative transition} of the input


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    PDF 44Tb2D3 HD74HC4040 12-stage HD74HC4040 0D1D315 T-90-20

    Untitled

    Abstract: No abstract text available
    Text: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.


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    PDF HVM17 ADE-208-087B 50min) 10MHz 200pF, 10OnA

    Untitled

    Abstract: No abstract text available
    Text: highest figure of merit Phase Detectors 1000mV DC output, + 7dBm RF ZRPD FR E Q U E N C Y P O W ER IN MHz SC A LE FA C TO R IMPEDANCE ISO LATION ohms (dB) O UTPUT PO LARITY D C O U TP U T (m V) O U TP U T LO A D M O D EL NO. RF1 RF2 RF1 RF2 1 (dBm) I mV/despee


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    PDF 1000mV DC-50 MPD-21 soo-654