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    MITSUBISHI APPLICATION NOTE RF POWER Search Results

    MITSUBISHI APPLICATION NOTE RF POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MITSUBISHI APPLICATION NOTE RF POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rd02mus1

    Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-017 RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 175MHz 440MHz 450MHz 470MHz AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER

    RD01MUS1

    Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with


    Original     		PDF AN-UHF-019 RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 155MHz 175MHz 520MHz 0mm/50 micro strip line MITSUBISHI APPLICATION NOTE RF POWER

    RD09MUP2

    Abstract: 555 application note
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


    Original     		PDF AN-UHF-072 RD09MUP2" 400-520MHz RD09MUP2 RD09MUP2: 059XA-G" 400/520MHz 520MHz 3mm/50OHM 330pF 555 application note

    RD12MVP1

    Abstract: RD12MVS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout


    Original     		PDF AN-VHF-034 RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1

    RD07MVS1

    Abstract: micro strip line
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-018-B RD07MVS1 RD07MVS1. RD07MVS1: 025XA" 031AA" 470MHz 136MHz 136MHz) 155MHz micro strip line

    AN-UHF-027-B

    Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency


    Original     		PDF AN-UHF-027-B RD07MVS1 RD07MVS1. RD07MVS1: 031AA" 450-520MHz AN-UHF-027-B 450-520MHz) adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247

    RD07MVS1

    Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency


    Original     		PDF AN-900-006 RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735

    diode gp 429

    Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data


    Original     		PDF AN-900-028 RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz diode gp 429 RD01MUS1 RD07M RD07MVS AN-900-028

    RD07MVS1

    Abstract: RD01MUS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data


    Original     		PDF AN-900-008 RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1

    RD06HVF1

    Abstract: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026 Date : 22th Nov. 2004 Prepared : K.Inaba Confirmed : S.Kametani SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz SUMMARY: This application note shows the RF characteristics data for 135MHz-175MHz


    Original     		PDF AN-VHF-026 RD06HVF1 135-175MHz 135MHz-175MHz RD06HVF1 135MHz 175MHz: 220uf/25V mitsubishi rf rf amplifier broad band 175mhz 220uF, 25V MITSUBISHI APPLICATION NOTE RF POWER

    RD01MUS2

    Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency


    Original     		PDF AN-UHF-085 RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 RPC05 RD01MUS2 rpc03 grm188r11h taiyo RPC03 micro electronics

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M

    RD01MUS1

    Abstract: RD07MVS1 848/b+5891
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency


    Original     		PDF AN-VHF-013Date RD01MUS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz RD01MUS1 848/b+5891

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:


    Original     		PDF AN-GEN-006-D shinetsu G746 rohs shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER

    RD01MUS1

    Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.


    Original     		PDF AN-GEN-038 RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 100pF /100pF RD01MUS1 RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf

    walkie-talkie

    Abstract: sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-030-B Date : 16th June. 2003 Prepared : T.Kajo,T.Ohkawa Confirmed : Issue B: H.Nakao ht 27 Oct. 2003 T.Ohkawa SUBJECT: Reliability concept for SiRF Products Conclusion: products. This application note shows the reliability concept and reliability level for SiRF


    Original     		PDF AN-GEN-030-B AN-GEN030 490MHz walkie-talkie sirf 4 mitsubishi rf sirf sirf 3 reliability RA30H4452M MITSUBISHI example

    shinetsu G746

    Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal


    Original     		PDF AN-GEN-001 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical

    RA30H4047M1

    Abstract: mitsubishi rf MITSUBISHI RF POWER MOS FET RA30H4552M1
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-083B Date : 17th Jul. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Electro Static Sensitivity for RA30H4552M1 and RA30H4047M1


    Original     		PDF AN-UHF-083B RA30H4552M1 RA30H4047M1 RA30H4047M1 RA30H4047M1. 400-470MHz, 100pF, mitsubishi rf MITSUBISHI RF POWER MOS FET

    RA60H4047M1

    Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.


    Original     		PDF AN-UHF-078 RA60H4452M1 RA60H4047M1 RA60H4047M1 RA60H4047M1. mitsubishi bipolar rf power mitsubishi rf

    RA45H7687M1

    Abstract: mitsubishi rf sirf 1v GG13
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1


    Original     		PDF AN-900-026 RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm AN-900-026 806MHz mitsubishi rf sirf 1v GG13

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS


    Original     		PDF AN-GEN-042-B shinetsu G746 rohs shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented

    mitsubishi Lot No

    Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:


    Original     		PDF AN-900-027 RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No AN-900-027 RA45H7687M1 MITSUBISHI APPLICATION NOTE RF POWER

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    MGF7104

    Abstract: MGF7103
    Text: ^MITSUBISHI MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION APPLICATION M G F7100 Series are m onolithic m icrow ave integrated circuits for use in 900M H z band # RF output stage of H andheld phone am plifiers. Note: This is not a final specification.


    OCR Scan     		PDF MGF7100 900MHz F7100 NMT-900 MGF7103 MGF7104 MGF7105 200mA,