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    MJJ TRANSISTOR Search Results

    MJJ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJJ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSW68A

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification


    Original     		PDF BSW68A BSW68A

    RF MOSFET

    Abstract: MRF171A
    Text: •sSsmi-Conductoi ZPtoauati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from


    Original     		PDF MRF171A 150MHz RF MOSFET MRF171A

    BDT95

    Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94
    Text: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 Q3477M BDT95 BOT93 BDT96 BOT95 BDT91 BDT92

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER P H I L I P S / D I S C R E T E • Jl MAINTENANCE TYPE D D lS in 1 PV3742B4X T - 'll- O ' MICROWAVE POWER TRANSISTOR N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz, . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


    OCR Scan     		PDF PV3742B4X

    2sd2037

    Abstract: 2SB1357 2sd2037 transistor
    Text: h 7 > y ^ í í / T ransistors 2SB1357 2SB1357 T V j\s —rfó X PNP '> U =i > E p itaxial P la n a r P N P S ilico n Transistor f é J i j & ^ ^ i i ' i i f f l / L o w F re q . P o w er A m p . • fis vtiiE]/D im ensions Unit : mm) 1) V c e (satl^'ffi'-'o


    OCR Scan     		PDF 2SB1357 2SB1357 2SD2037 2SD2037. 2sd2037 transistor

    Untitled

    Abstract: No abstract text available
    Text: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 oo34s 003HS1S

    TIP136

    Abstract: TIP137 TIP137 Darlington transistor TIP130 TIP131 TIP132 TIP135 ip12
    Text: TIP135 TIP136 TIP137 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130, TIP131 and TIP132.


    OCR Scan     		PDF TIP135 TIP136 TIP137 O-220AB TIP130, TIP131 TIP132. TIP136 TIP137 TIP137 Darlington transistor TIP130 TIP132 ip12

    BD941

    Abstract: b 939 a BD933 BD934 BD937 IEC134 IC 935
    Text: BD933; 935 BD937; 939 BD941 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942.


    OCR Scan     		PDF BD933; BD937; BD941 BD934; BD933 MECHANIC0034515 7Z82166 BD941 b 939 a BD934 BD937 IEC134 IC 935

    LZ1418E100R

    Abstract: data transistor scans
    Text: _ I_I_ _ _ N AMER PHILIPS/DISCRETE übE D • ^53=131 0015031 1 m LZ1418E100R _ Â T -3 3 -U MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in


    OCR Scan     		PDF LZ1418E100R T-33-U T-33-il LZ1418E100R data transistor scans

    b0330

    Abstract: No abstract text available
    Text: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0


    OCR Scan     		PDF BD330 OT-32 BD329. Lti53T31 7Z62126 bbS3131 D0343S3 B0330 b0330

    BU706

    Abstract: specification of curve tracer BU706D
    Text: Philips Sem iconductors Product specification Silicon diffused power transistors BU706; BU706D High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-m ode applications. The


    OCR Scan     		PDF BU706; BU706D BU706D BU706D) 711002b BU706 specification of curve tracer

    TIP29

    Abstract: TIP29B TIP30
    Text: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		PDF TIP29; TIP29B; TIP30 TIP29 O-220. 7Z82166 ApriM981 bbS3T31 TIP29B

    BDx77 magna

    Abstract: BDX77 BDX78
    Text: MAGNA BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope, intended for industrial amplifier and switching applications. N-P-N complement B D X 77 . Q U IC K R E F E R E N C E D A T A Collector-emitter voltage {open base - v CE0


    OCR Scan     		PDF BDX78 BDX77. O-220 BDX78 BDx77 magna BDX77

    BDT95

    Abstract: No abstract text available
    Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. DBDT93 BDT95

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching


    OCR Scan     		PDF BD244; BD244A BD244C BD243; BD243C. BD244 bh53T31 BD244: BD244B;

    BD953

    Abstract: No abstract text available
    Text: BD949; 951 BD953; 955 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		PDF BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 BD949/951. BD953/955.

    T1P127

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT T1P121 TIP127 TIP126 circuit T1P-127 TIP126 tip125 P126 TIP120
    Text: TIP125 TIP126 TIP127 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio ou tp u t stages and general am plifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, T1P121


    OCR Scan     		PDF TIP125 TIP126 TIP127 T0-220 TIP120, T1P121 TIP122. TIP126 T1P127 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT TIP127 TIP126 circuit T1P-127 P126 TIP120

    tip112a

    Abstract: TIP112 TIP111 TIP110 transistor TIP110 TIP115 TIP116 darlington 131 tip
    Text: TIP110 TIP111 TIP112 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am p lifie r and switching applications. TO-22QAB plastic envelope. P-N-P complements are


    OCR Scan     		PDF TIP110 TIP111 TIP112 O-22QAB TIP115, TIP116 TIP111 D34ci7b tip112a TIP112 TIP110 transistor TIP115 darlington 131 tip

    TIP42 philips

    Abstract: T1P42B
    Text: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier


    OCR Scan     		PDF TIP42 TIP42B GGM3S34 TIP41 TIP42jA T1P42B 711002b 0043S40 X--33--21 TIP42 philips

    r33pi

    Abstract: BD243 b0244c R33p BD243C BD244 BD244A BD244B BD244C IEC134
    Text: ri N AMER PHILIPS/DISCRETE _ S5E D • bbSB^l QQlTHn , Q ■ BD244; BD244A BD244B; BD244C Â r - 3 5 - ^ i SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applications.N-P-N complements are BD243; 243A; 243B; and BD243C.


    OCR Scan     		PDF BD244; BD244A BD244B; BD244C r-33-p. BD243; BD243C. BD244 r33pi BD243 b0244c R33p BD243C BD244B BD244C IEC134

    2sc372

    Abstract: transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor 2SC373 NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373
    Text: i/ 'J D ^ N P N It ^ s / ^ J W B h ^ ^ ^ C P C T B Ä SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS O o H igh Frequency A m p lifie r A p p lic a tio n s U n i t in m m Low F r e q u ö n c y A m p l i f i e r A p p l i c a t i o n s M A X I M U M RATINGS


    OCR Scan     		PDF Jl045 2sc372 2sc373 VCB-18V, IE-073 2SC373 transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373

    d1694

    Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
    Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base


    OCR Scan     		PDF BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv

    ETN35-O3O

    Abstract: L63A
    Text: ETI\I35-O3O 300a • : Outline Drawings POWER TRANSISTOR MODULE ’ Features High Current • h F E ^ ^ v ,^ High DC Current Gain • Non Insulated Type 83 -iVVr'4 ‘ Applications • High Power Switching " j T - 's 'f Uninterruptible Power Supply • DC ^ —


    OCR Scan     		PDF ETI\I35-O3O I95t/R89) ETN35-O3O L63A

    BUT18

    Abstract: BUT18A
    Text: m b^E D N AUER PHILI P S / D I S C R E T E ^53^31 GDSfiMSH 15b BUT18 BUT18A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.


    OCR Scan     		PDF BUT18 BUT18A O-220 O-220AB. BUT18 7Z94646 BUT18A