Untitled
Abstract: No abstract text available
Text: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000
|
Original
|
PDF
|
5N100
5N100A
O-204
O-247
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
|
AN569
Abstract: MTW10N100E
Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
PDF
|
MTW10N100E
r14525
MTW10N100E/D
AN569
MTW10N100E
|
adc 0808 internal circuit diagram
Abstract: TB-547 AN569 MTW6N100E MTW6N100
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
PDF
|
MTW6N100E
r14525
MTW6N100E/D
adc 0808 internal circuit diagram
TB-547
AN569
MTW6N100E
MTW6N100
|
AN569
Abstract: MTW10N100E
Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
PDF
|
MTW10N100E
O-247
r14525
MTW10N100E/D
AN569
MTW10N100E
|
adc 0808 internal circuit diagram
Abstract: No abstract text available
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
PDF
|
MTW6N100E
O-247
MTW6N100E/D
adc 0808 internal circuit diagram
|
24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
PDF
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM
|
Original
|
PDF
|
01N100
100mA
O-251
728B1
|
01n100
Abstract: 4506v iXTY01N100
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20
|
Original
|
PDF
|
01N100
100mA
728B1
01n100
4506v
iXTY01N100
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20
|
Original
|
PDF
|
01N100
01N100
100mA
O-251
O-252
405B2
|
1N100
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM
|
Original
|
PDF
|
1N100
O-263
O-220AB
1N100
|
2N100
Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
2N100
O-220AB
O-263
125OC
Figure10.
2N100
FIGURE10
125OC
IXTA2N100
IXTP2N100
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM
|
Original
|
PDF
|
1N100
O-263
O-220AB
|
30n100
Abstract: IXTN30N100L 30n10
Text: Linear Power MOSFET IXTN30N100L With Extended FBSOA VDSS ID25 D = 1000 = 30 ≤ 0.45 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous
|
Original
|
PDF
|
IXTN30N100L
OT-227
E153432
30N100L
5-07-A
30n100
IXTN30N100L
30n10
|
|
|
IXFX32N100P
Abstract: ixfk32n100p PLUS247
Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V
|
Original
|
PDF
|
IXFK32N100P
IXFX32N100P
300ns
O-264
32N100P
3-28-08-C
IXFX32N100P
ixfk32n100p
PLUS247
|
IXTK22N100L
Abstract: PLUS247
Text: Advance Technical Information Linear Power MOSFET IXTK22N100L With Extended FBSOA IXTX22N100L VDSS ID25 N-Channel Enhancement Mode RDS on = 1000 = 22 ≤ 0.60 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR
|
Original
|
PDF
|
IXTK22N100L
IXTX22N100L
O-264
PLUS247TM
22N100L
4-05-07-A
IXTK22N100L
PLUS247
|
Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous
|
Original
|
PDF
|
IXFR20N100P
ISOPLUS247
E153432
20N100P
04-01-08-B
|
Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous
|
Original
|
PDF
|
IXFK32N100P
IXFX32N100P
300ns
32N100P
3-28-08-C
|
IXFR20N100P
Abstract: N CHANNEL MOSFET 10A 1000V ISOPLUS247 MOSFET 1000v 10a
Text: PolarTM Power MOSFET HiPerFETTM IXFR20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous
|
Original
|
PDF
|
IXFR20N100P
300ns
20N100P
04-01-08-B
IXFR20N100P
N CHANNEL MOSFET 10A 1000V
ISOPLUS247
MOSFET 1000v 10a
|
IXFB44N100P
Abstract: IXFB44N100 44n10 44n100p DS99867A
Text: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous
|
Original
|
PDF
|
IXFB44N100P
300ns
PLUS264TM
44N100P
4-01-08-D
IXFB44N100P
IXFB44N100
44n10
DS99867A
|
10N100D
Abstract: DSA003705
Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C
|
Original
|
PDF
|
10N100D
10N100D
O-247
O-247
O-268
O-268
DSA003705
|
5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
|
OCR Scan
|
PDF
|
N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
|
IXTH5N100A
Abstract: gs 1117 ax
Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000
|
OCR Scan
|
PDF
|
5N100
5N100A
to150
O-247
O-204
O-204
O-247
IXTH5N100
IXTM5N100
IXTH5N100A
gs 1117 ax
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25
|
OCR Scan
|
PDF
|
IXTA2N100
IXTP2N100
Cto150
O-263
O-22QAB
1999IXYS
C2-76
C2-77
|
