014E
Abstract: 200E 800E MT3S05T
Text: MT3S05T SPICE parameters UCB SPICE2G6 20020513 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S05T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19
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MT3S05T
014E-02
260E-10
800E-13
346E-14
014E
200E
800E
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Untitled
Abstract: No abstract text available
Text: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S05T MT3S05FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04
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MT6L05FS
MT3S05T
MT3S05FS)
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Untitled
Abstract: No abstract text available
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol
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MT6L55FS
MT3S07T
MT3S07FS)
MT3S05T
MT3S05FS)
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MT3S05FS
Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:
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MT6L55FS
MT3S07T
MT3S05T
MT3S07FS)
MT3S05FS)
MT3S05FS
MT3S05T
MT3S07FS
MT3S07T
MT6L55FS
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MT3S05T
Abstract: No abstract text available
Text: MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications • · Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB · Excellent collector current linearity |S21e|2 = 8.5dB @1 V/5 mA/1 GHz
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MT3S05T
MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB • Excellent collector current linearity |S21e|2 = 8.5dB @1 V/5 mA/1 GHz
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MT3S05T
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MT3S05T
Abstract: No abstract text available
Text: MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications • Sutable for use in an OSC • Low noise figure NF = 1.4dB • Excellent collector current linearity |S21e|2 = 8.5dB @1 V/5 mA/1 GHz Maximum Ratings (Ta = 25°C)
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MT3S05T
000707EAA1
MT3S05T
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MT3S05T
Abstract: No abstract text available
Text: MT3S05T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S05T ○ VHF~UHF 帯低電圧動作･低位相雑音タイプ • OSC 用途に適しています。 • Low 位相雑音。 単位: mm NF = 1.4dB • コレクタ電流の伸びが良好。
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MT3S05T
MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Maximum Ratings (Ta = 25°C) Characteristic fS6
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MT6L55FS
MT3S07T
MT3S07FS)
MT3S05T
MT3S05FS)
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Untitled
Abstract: No abstract text available
Text: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S05T MT3S05FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO
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MT6L05FS
MT3S05T
MT3S05FS)
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MT3S05T
Abstract: No abstract text available
Text: MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Suitable for use in an OSC Low noise figure NF = 1.4dB • Excellent collector current linearity |S21e|2 = 8.5dB @1 V/5 mA/1 GHz
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MT3S05T
MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications • • Unit: mm Suitable for use in an OSC Low noise figure NF = 1.4dB • Excellent collector current linearity |S21e|2 = 8.5dB @1 V/5 mA/1 GHz
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MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L55E
MT3S07S
MT3S07T)
MT3S05T
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
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MT3S05T
Abstract: MT3S06S MT3S06T MT6L53E marking B2 VHF-UHF Band oscillator
Text: MT6L53E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)
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MT6L53E
MT3S06S
MT3S06T)
MT3S05T
MT3S05T
MT3S06S
MT3S06T
MT6L53E
marking B2
VHF-UHF Band oscillator
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
TOSHIBA RF Power Module S-AV24
diode varicap BB 112
varicap v147
2SC386A
2SK1310
3SK78
2sc5066
V101 varicap diode
1SV149
2SK192
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Untitled
Abstract: No abstract text available
Text: MT6L53E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)
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MT6L53E
MT3S06S
MT3S06T)
MT3S05T
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MT3S05FS
Abstract: MT3S05T MT6L05FS MT6L05
Text: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products:TESM fSM mold products 0.35 0.35 Absolute Maximum Ratings (Ta = 25°C) Characteristic
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MT6L05FS
MT3S05FS
MT3S05T
MT6L05FS
MT6L05
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAD1
3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
3SK73
S-AV24
3SK121
3SK114
TOSHIBA RF Power Module S-AV24
3SK101
S-AU82VL
diode varicap BB 112
2SC2328
3SK112
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MT3S05FS
Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS 21F1A
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.
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MT6L55FS
MT3S05T
MT3S07FS)
MT3S05FS)
MT3S07T
MT3S05FS
MT3S05T
MT3S07FS
MT3S07T
MT6L55FS
21F1A
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MT3S05T
Abstract: MT3S06S MT3S06T MT6L53E
Text: MT6L53E Silicon NPN Epitaxial Planar Type MT6L53E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)
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MT6L53E
MT3S06S
MT3S06T)
MT3S05T
MT3S05T
MT3S06S
MT3S06T
MT6L53E
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Untitled
Abstract: No abstract text available
Text: MT6L53E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L53E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices are built in to the super-thin and ultra super mini 6 pin package: ES6 Q1: SSM (TESM)
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MT6L53E
MT3S06S
MT3S06T)
MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT6L53S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L53S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit : mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L53S
MT3S06S
MT3S06T)
MT3S05T
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