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Motorola Semiconductor Products MTP2N10E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N10E		1,069			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTP2N20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N20		850			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MTP2N20		16			1 $4.5 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
Motorola Semiconductor Products MTP2N60E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N60E		460			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MTP2N60E		368			1 $3.52 10 $3.52 100 $1.76 1000 $1.628 10000 $1.628	Buy Now
Motorola Mobility LLC MTP2N40
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N40		132		3	1 - 10 $1.875 100 $0.7031 1000 $0.7031 10000 $0.7031	Buy Now
Motorola Semiconductor Products MTP2N40E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N40E		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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MTP2N Datasheets (99)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP2N18	Fairchild Semiconductor	N-channel power MOSFET, 3.5 A, 180V.	Scan	PDF
MTP2N18	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP2N18	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP2N18	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP2N18	Unknown	FET Data Book	Scan	PDF
MTP2N18	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF
MTP2N20	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP2N20	Fairchild Semiconductor	N-channel power MOSFET, 3.5 A, 200V.	Scan	PDF
MTP2N20	Motorola	Switchmode Datasheet	Scan	PDF
MTP2N20	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP2N20	Motorola	N-channel TMOS power FET. 200 V, 2 A, Rds(on) 1.8 Ohm.	Scan	PDF
MTP2N20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP2N20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MTP2N20	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

MTP2N20	Unknown	FET Data Book	Scan	PDF
MTP2N20	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF
MTP2N25	Motorola	Switchmode Datasheet	Scan	PDF
MTP2N25	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP2N25	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
MTP2N25	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

MTP2N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mtp2n Abstract: mtp2n45 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N45 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP2N45 mtp2n mtp2n45
mtp2n Abstract: mtp2n50 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N50 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP2N50 mtp2n mtp2n50
Untitled Abstract: No abstract text available Text: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	PDF	MTP2N60E
MTP2N60E Abstract: AN569 MTP2N60E MOTOROLA Q348 Text: MOTOROLA Order this document by MTP2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	PDF	MTP2N60E/D MTP2N60E MTP2N60E/D* MTP2N60E AN569 MTP2N60E MOTOROLA Q348
mtp2n Abstract: mtp2n55 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N55 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP2N55 mtp2n mtp2n55
mtp2n Abstract: mtp2n40 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N40 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP2N40 mtp2n mtp2n40
mtp2n Abstract: mtp2n35 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N35 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220 MTP2N35 mtp2n mtp2n35
Untitled Abstract: No abstract text available Text: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS MMN'. -I-! •H B h- 1 ±	Original	PDF	MTP2N80 O-220)
Untitled Abstract: No abstract text available Text: MTP2N40E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading	Original	PDF	MTP2N40E MTP2N40E/D
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP2N60E O-220AB 250Vdc
MTP2N85 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N85 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	PDF	MTP2N85 O-220 MTP2N85
Untitled Abstract: No abstract text available Text: MTP2N60E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading	Original	PDF	MTP2N60E MTP2N60E/D
MTP-2N50E Abstract: mtp2n50e Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 3.6 OHM	Original	PDF	MTP2N50E/D MTP2N50E/D* MTP-2N50E mtp2n50e
MTP2N90 Abstract: mtp2n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N90 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	PDF	O-220 MTP2N90 MTP2N90 mtp2n

IRF610 Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20 Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power	OCR Scan	PDF	IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20
mtp3n6u Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50 Text: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2	OCR Scan	PDF	MTP1N60 O-220AB MTP1N95 MTP3N45 MTP3N50 MTP3N50E mtp3n6u MTP2P45 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
Untitled Abstract: No abstract text available Text: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2	OCR Scan	PDF	IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723
IRF610 Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18 Text: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power	OCR Scan	PDF	IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613
2n50 Abstract: irf420 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF421 IRF422 IRF423 Text: FAIRCHILD SEMICONDUCTOR Û 4 D E j l 3 4 h cl t i 7 4 G D B T im IRF420-423/IRF820-823 r - i U f MTP2N45/2N50 N-Channel Power MOSFETs, 3.0 A, 450 V /50 0 V F A IRCHILD • M a n B B B H B M I A Schlumberger Company Power And Discrete Division_	OCR Scan	PDF	IRF420-423/IRF820-823 MTP2N45/2N50 O-204AA IRF420 IRF421 IRF422 IRF423 O-220AB IRF820 IRF821 2n50 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF423
IRF710 Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713 Text: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division	OCR Scan	PDF	MTP2N35/2N40 O-220AB IRF710/712 MTP2N40 IRF711/TO IRF710-713 IRF710-713 0087m. IRF710 1RF710 2N40 TT 2158 MTP2N35 Ac,713
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without	OCR Scan	PDF	MTP2N50E/D 21A-06
MTP2N85 Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85 Text: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 \| F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS	OCR Scan	PDF	MTM2N85 MTM2N90 MTP2N85 MTP2N90 021SBSC 21A-04 O-220AB 0005KS) T0-204M MTP2N90 td 3404 ap n1TM transistor 3405 motorola
1RF710 Abstract: No abstract text available Text: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C\|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100	OCR Scan	PDF	IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710
GG88 Abstract: T3901 Text: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1	OCR Scan	PDF	D03711B gg8888Ã T-39-01 GG88 T3901

MTP2N Search Results

MTP2N Price and Stock

Motorola Semiconductor Products MTP2N10E

Motorola Semiconductor Products MTP2N20

Motorola Semiconductor Products MTP2N60E

Motorola Mobility LLC MTP2N40

Motorola Semiconductor Products MTP2N40E

MTP2N Datasheets (99)

MTP2N Datasheets Context Search

mtp2n

mtp2n

Untitled

MTP2N60E

mtp2n

mtp2n

mtp2n

Untitled

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MTP2N85

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MTP-2N50E

MTP2N90

IRF610

mtp3n6u

Untitled

IRF610

2n50

IRF710

Untitled

MTP2N85

1RF710

GG88