ZVP2120A
Abstract: to92 fet p channel DSA003787
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS
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ZVP2120C
ZVP2120A
ZVP2120A
to92 fet p channel
DSA003787
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ZVP2120A
Abstract: P-Channel FET 100v to92
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS
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ZVP2120C
ZVP2120A
ZVP2120A
P-Channel FET 100v to92
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ZVP2110A
Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS
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ZVP2110C
ZVP2110A
ZVP2110A
P-Channel FET 100v to92
to92 fet p channel
DSA003787
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
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TN5335
DSFP-TN5335
A080712
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ciss 200v
Abstract: IRFE310
Text: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W
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IRF9140"
IRF9140
IRF9140-JQR-B
IRF9140SMD
IRF9140SMD-JQR-B
O276AB)
1400pF
ciss 200v
IRFE310
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MIL-STD-806
Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted
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TC4069 OSCILLATOR
Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Text: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted
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2SK1036
Abstract: No abstract text available
Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o
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2SK1036
O-220
D01713Ã
2SK1036
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2SK1267
Abstract: SC-65 D 1169 25
Text: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage
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2SK1267
180ns
VW-10V.
2SK1267
SC-65
D 1169 25
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2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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2SK1529
2SK1530
2SK357
2SK358
2SK525
2SK526
2SK532
2SK387
2SK572
2SK578
2SK1118
2SK1513
TO-3P
2SK1723
2SK790
p-channel fet to-220
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Untitled
Abstract: No abstract text available
Text: 2SK1817-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ T¥T - F - lll • Features r p n i r o E R o I E b Outline Drawings • High current • Low no-resistance • No secondary b reakd ow n
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2SK1817-M
1817-M
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2sk mosfet
Abstract: C 5388 controler 2SK906 SC-65 T151 2sk 100a
Text: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power ■A p plicatio ns • DC-DC converters • M otor controlers • General purpose pow er amplifier
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2SK906
SC-65
2sk mosfet
C 5388
controler
2SK906
SC-65
T151
2sk 100a
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage
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BSS123A
170mA
280mA
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2SK1264
Abstract: 2SK12 H150
Text: P o w e r F-MOS FET 2SK12Ó4 2SK1264 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) l = 0 . 7 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 3 6 n s (ty p .) • No seco n d a ry breakdow n
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2SK12Ã
2SK1264
2SK1264
2SK12
H150
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2SK1036
Abstract: mqs 6 2SK103
Text: P ow er F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions • Features U ni: nan • Low ON resistance Kl* on : Ri„ (on) = 0 .2 il (typ.) • High sw itc h in g r a t e : t« » 8 0 n s (ty p .) M —t 10 2 « a . • No secondary breakdown
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2SK1036
O-220
2SK1036
mqs 6
2SK103
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2SK1036
Abstract: No abstract text available
Text: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n
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2SK1036
29max
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2SK804
Abstract: No abstract text available
Text: P o w e r F-MOS FET 2SK804 2SK804 Silicon N-channel Power F-MOS FET P a c k a g e D im e n s io n s • F e a tu re s • Low ON re sistan c e RDs on : RDs (on) = 0.08A (typ.) • High switching ra te : tf= 150ns (typ.) • No secondary breakdow n • High breakdow n voltage
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2SK804
150ns
2SK804
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td 1410
Abstract: 2SK761
Text: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON r e s is ta n c e R Db on : R ds (on) = 0 . 1 5 f i (ty p .) Unit: mm 5.2max. 15 5max. • High sw itch in g ra te : tf = 1 2 0 n s (ty p .) • No seco n d a ry breakdow n
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2SK761
120ns
td 1410
2SK761
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1C00
Abstract: 2SK805
Text: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n
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2SK805
120ns
0D171D0
1C00
2SK805
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controler
Abstract: 2SK906 SC-65 T151
Text: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistan ce • No secondary b rea kd o w n • Low driving p o w er ■A pplications • D C -D C converters • M o to r co n tro lers
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OCR Scan
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2SK906
SC-65
controler
2SK906
SC-65
T151
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2SK755
Abstract: TCI-220 251C
Text: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS : R ds, on = 0 . 3 3 0 (ty p .) Unit: mm • High sw itch in g r a te : tf = 4 5 n s (ty p .) • N o seco n d a ry breakdow n
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2SK755
TCI-220
0D170bE
2SK755
251C
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Untitled
Abstract: No abstract text available
Text: MAE J> m SO LIT RO N DEVICES INC ics r a m i rs\n iirr-ir fl3bflb02 OGDBSflM SG3 « S O P Q A T Ä L O Q _ P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. o.3n JAA JAB SDF9130 SDF9130 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS
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fl3bflb02
-100V
SDF9130
MIL-S-19500
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2sk12a
Abstract: D 1163 2SK12 2SK1264
Text: P o w er F-MOS FET 2SK12Ó4 2S K 1264 Silicon N-channel Power F-M O S FET P ackage Dimensions • Features • L ow ON r e s is ta n c e R ds on : RDS (on) l = 0 .7 1 i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 3 6 n s (ty p .) • No se c o n d a ry b reak d o w n
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2SK12Ã
2SK1264
O-220
2sk12a
D 1163
2SK12
2SK1264
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diode DS10
Abstract: No abstract text available
Text: Panasonic Power Transistor Arrays F-MOS FETs PUB4701 Silicon N-Channel Power F-MOS FET • Features 0 Avalanche energy capacity guaranteed • High-speed switching • Low ON-resistance 0 No secondary breakdown 0 Low-voltage drive ■ A p p lic a tio n s
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PUB4701
pul10V,
diode DS10
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